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A method for manufacturing a substrate for low warpage polysilicon solar cells

A manufacturing method and low warpage technology, applied in final product manufacturing, sustainable manufacturing/processing, circuits, etc., can solve problems such as warpage of silicon wafers, and achieve the effect of solving warpage problems

Active Publication Date: 2020-02-14
苏州澳京光伏科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0008] The purpose of the present invention is to overcome the problem of warpage of silicon wafers after silicon wafer sand blasting in the prior art, and provide a method of manufacturing low warpage silicon wafers, especially the low warpage produced by diamond wire cutting. Polysilicon substrate

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0022] The surface of the polycrystalline silicon wafer cut by diamond wire is textured by sandblasting process, and the first surface and the second surface of the polycrystalline silicon wafer surface are treated simultaneously by wet sandblasting. The abrasive used in the wet sandblasting process is 400 mesh silicon carbide , the abrasive weight accounts for 0.13 of the sandblasting liquid weight, the spray gun pressure is 0.3MPa, and the sandblasting treatment time is 6min, then spray and clean the surface of the polycrystalline silicon wafer with deionized water to remove the residual sandblasting liquid on the surface of the polycrystalline silicon wafer, and finally use The blower dries the surface of the silicon wafer. Use a gloss meter (Novo Gloss Trigloss Gloss Meter, Rhopoint Instruments) to measure the first and second sides of the silicon wafer surface at a measurement angle of 20 degrees, and the glossiness of the first side is 126.7GU (glossunit), and the glossin...

Embodiment 2

[0024] Carry out cashmere on the surface of the polycrystalline silicon wafer after diamond wire cutting by sandblasting process, utilize wet sandblasting to process the first surface of polycrystalline silicon wafer surface first, the abrasive material that described wet method sandblasting process adopts is silicon carbide of 400 meshes, and abrasive material weight accounts for 0.13 of the weight of the sandblasting fluid, the pressure of the spray gun is 0.3 MPa, and the sandblasting treatment time is 10 minutes, and then the second side of the surface of the polycrystalline silicon wafer is processed. The abrasive used is 400 mesh silicon carbide, and the weight of the abrasive is 0.13 of the weight of the sandblasting fluid. The pressure is 0.2MPa, and the blasting treatment time is 10min. Then, the surface of the polycrystalline silicon wafer is sprayed and cleaned with deionized water to remove the residual sandblasting liquid on the surface of the polycrystalline silic...

Embodiment 3

[0026] Carry out cashmere on the surface of the polycrystalline silicon wafer after diamond wire cutting by sandblasting process, utilize wet sandblasting to process the first surface of polycrystalline silicon wafer surface first, the abrasive material that described wet method sandblasting process adopts is silicon carbide of 300 mesh, and abrasive material weight accounts for 0.11% of the weight of the sandblasting fluid, the pressure of the spray gun is 0.2MPa, and the sandblasting treatment time is 10min. The pressure is 0.1MPa, and the blasting treatment time is 6min. Then, the surface of the polycrystalline silicon wafer is sprayed and cleaned with deionized water to remove the residual sandblasting liquid on the surface of the polycrystalline silicon wafer, and finally the surface of the silicon wafer is dried by an air blower. Use a gloss meter (Novo Gloss Trigloss Gloss Meter, Rhopoint Instruments) to measure the first side and the second side of the silicon wafer su...

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Abstract

The invention belongs to the technical field of polysilicon substrates, and specifically relates to a manufacturing method of a substrate used for a low-warping polycrystalline silicon solar cell. Theinvention provides a surface sand-blasting texturing mode of the polycrystalline silicon solar cell, and the warping degree of the polycrystalline silicon after texturing can be controlled by using the mode. The two-faced texturing degree of the silicon wafer is adjusted through wet process sand-blasting so as to obtain the silicon wafer with texturing structures on two faces, then the damage degree of the band-blasting processing procedure on two faces of the silicon wafer is judged through the glossiness after texturing on the two faces of the silicon wafer, and then the warping degree of the silicon wafer is controlled so as to reduce the probability of fragment occurrence.

Description

technical field [0001] The invention belongs to the technical field of polysilicon substrates, and in particular relates to a method for manufacturing a low warpage polysilicon solar cell substrate. Background technique [0002] Currently in the photovoltaic market, polysilicon wafer cutting technology has gradually replaced the traditional mortar cutting method (free abrasive method) by diamond wire cutting method (fixed abrasive method) with low cost, fast slicing speed and low pollution. However, due to the shallow damage layer and obvious line marks of silicon wafers cut by diamond wire, it is difficult to etch an effective anti-reflection texture on the surface by conventional mortar wire acid texturing. , the main solutions include: diamond wire direct additive method, reactive ion etching (Reactive ion etching, RIE), metal catalyzed chemical etching (MetalCatalyzed Chemical Etching, MCCE), sandblasting and so on. [0003] Among them, there is no need to add chemical ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/18
CPCH01L31/1876Y02E10/50Y02P70/50
Inventor 柯文杰顾夏斌赖玮晟杨世豪
Owner 苏州澳京光伏科技有限公司
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