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4results about How to "Suppress changes" patented technology

Power system, power control device, and power control method

ActiveCN116890682Binhibit the power ofsuppress changesCharging stationsBatteries circuit arrangementsControl powerElectric power system
The present application relates to a power system, a power control device, and a power control method. The power system includes a first power device, a second power device, a third power device, and a power control device. The power control device is configured to control power control of each of the first power device, the second power device, and the third power device. The power control device is configured to perform gradual switching control when the power control device switches an object of the power control from the first power device to the second power device. The power control device is configured to perform immediate switching control when the power control device switches the object of the power control from at least one of the first power device and the second power device to the third power device.
Owner:TOYOTA JIDOSHA KK

Semiconductor device, method for manufacturing the semiconductor device, or display device including the semiconductor device

In a transistor comprising an oxide semiconductor film, variations in electrical characteristics are suppressed. The transistor includes a first gate electrode, a first insulating film, an oxide semiconductor film, a source electrode, a drain electrode, a second insulating film, a second gate electrode, and a third insulating film. The oxide semiconductor film includes a first oxide semiconductor film on one side of the first gate electrode and a second oxide semiconductor film on the first oxide semiconductor film. Both the first and second oxide semiconductor films contain In, M, and Zn (M is Al, Ga, Y, or Sn). In a region of the second oxide semiconductor film, the number of In atoms is less than that of the first oxide semiconductor film. The second gate electrode contains at least one of the metal elements in the oxide semiconductor film.
Owner:SEMICON ENERGY LAB CO LTD

Drive device

ActiveCN224201721Usuppress changesTravelling grateIncinerator apparatusHydraulic cylinderSteel frame
The utility model solves the change of the hydraulic cylinder relative to reciprocating drive. A drive device (2) for driving a grate segment (2) of a grate-type incinerator (1A) is provided with: a cylinder (4) which is disposed on a steel frame (7) provided outside the incinerator (1A) and which reciprocates back and forth in a linear operation direction (MD) facing the inside of the incinerator (1A); a rod (5) that is connected to the front end (4A) side in the operation direction (MD) with respect to the cylinder and that extends into the incinerator (1A) along the operation direction (MD); a beam (6) that is connected to the front end (5A) side in the operation direction (MD) with respect to the rod (5), extends in the operation direction (MD), and supports the grate segments (2) from the lower side; a support roller (8) disposed on the lower side of the beam (6) and supporting the beam (6) from below; and a support structure that supports the cylinder, the rod, or the beam such that the cylinder, the rod, or the beam linearly operates in the operation direction during the operation of the cylinder.
Owner:MITSUBISHI HEAVY IND ENVIRONMENTAL & CHEM ENG CO LTD