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Epitaxy method of vertical [beta]-gallium oxide nanowire array

A technology of nanowire arrays and gallium oxide, applied in chemical instruments and methods, nanotechnology, metal/metal oxide/metal hydroxide catalysts, etc., can solve unintentional doping, lattice mismatch, nanowire tilt and other issues to achieve the effect of avoiding doping pollution and saving energy consumption

Pending Publication Date: 2021-01-12
SUZHOU INST OF NANO TECH & NANO BIONICS CHINESE ACEDEMY OF SCI
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Problems solved by technology

[0007] An embodiment of the present invention provides an epitaxy method for a vertical β-gallium oxide nanowire array, which is used to solve problems such as nanowire tilt, unintentional doping, and lattice mismatch in the prior art, including:

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  • Epitaxy method of vertical [beta]-gallium oxide nanowire array
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  • Epitaxy method of vertical [beta]-gallium oxide nanowire array

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Embodiment 1

[0054] combine figure 2As shown, in this embodiment, the vertical type gallium oxide nanowire array obtained includes a substrate 1, a gallium oxide nanowire array 2 vertically grown on the surface of the substrate 1, and a gallium oxide nanowire array located on the surface of the gallium oxide nanowire array 2 Ga catalyst 3 on top.

[0055] combine figure 1 As shown, the fabrication process of the vertical type β gallium oxide nanowire array includes:

[0056] 1) Substrate treatment

[0057] a) Necessary cleaning of the substrate to avoid contamination of the epitaxy equipment or introduction of unnecessary impurities during the epitaxy process;

[0058] b) An oxygen source is introduced during the substrate treatment process, and the substrate treatment temperature is kept at about 720°C.

[0059] 2) Ga catalyst deposition

[0060] a) Ga catalysts are fabricated on the surface of the substrate by means of metal-organic source deposition, coating of metal particles, sp...

Embodiment 2

[0070] combine Figure 5 As shown, in this embodiment, the obtained vertical type β gallium oxide nanowire array includes a substrate 1, a mask 4 laid on the surface of the substrate, through holes 41 with masks 4 distributed in the array, and through holes 41 The β gallium oxide nanowire array 2 vertically grown on the surface of the substrate 1 and the Ga catalyst 3 located on the top of the β gallium oxide nanowire array 2 .

[0071] The manufacturing process of the vertical type β gallium oxide nanowire array includes:

[0072] 1) Substrate treatment

[0073] a), deposit a mask on the surface of the substrate, the mask is Al 2 o 3 mask, LP-SiNx mask or AlN mask;

[0074] b) Opening through holes 41 distributed in an array on the mask 4 .

[0075] c) Necessary cleaning of the substrate to avoid contamination of the epitaxy equipment or introduction of unnecessary impurities during the epitaxy process;

[0076] d) During the substrate treatment process, an oxygen sourc...

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Abstract

The invention discloses an epitaxy method of a vertical [beta]-gallium oxide nanowire array. The epitaxy method of the vertical [beta]-gallium oxide nanowire array comprises the following steps: introducing a Ga source and an O source; and epitaxially growing the nanowire array on the surface of a substrate by using a Ga catalyst autocatalysis method, wherein the epitaxial growth temperature is 400-550 DEG C. According to the invention, the preparation of the high-crystalline-quality nanowire array perpendicular to the surface of the substrate is realized by utilizing a Ga liquid drop autocatalysis technology, and the unintentional doping pollution of other catalysts to the epitaxial material is avoided. According to the invention, the epitaxial preparation of the [beta]-Ga<2>O<3> nanowirecan be realized at a low-temperature section below 500 DEG C, and the energy consumption can be effectively saved.

Description

technical field [0001] The invention belongs to the technical field of semiconductor epitaxy, and in particular relates to an epitaxy method of a vertical beta gallium oxide nanowire array. Background technique [0002] In the prior art, the growth methods of β-gallium oxide nanowire arrays mainly include oblique array epitaxy, vertical array Au catalyzed epitaxy and Ga-containing compound vertical nanowire array oxidation. [0003] Tilted array epitaxy: Up to now, the epitaxial β-gallium oxide nanowires reported in the literature all form a certain angle with the substrate, and the orientations of gallium oxide nanowires prepared by different research groups are not consistent. Because it is difficult to interweave the inclined array into a network planarization, and it is difficult to control the position of functional junctions such as pn junctions and heterojunctions, it is difficult to implement complex processes and limit the preparation of nanowire array devices. Cur...

Claims

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Application Information

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IPC IPC(8): C23C16/40C23C16/56B82Y40/00B01J23/08
CPCC23C16/40C23C16/56B82Y40/00B01J23/08
Inventor 李军帅张晓东张宝顺曹旭
Owner SUZHOU INST OF NANO TECH & NANO BIONICS CHINESE ACEDEMY OF SCI
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