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Epitaxial growth method of light-emitting diode with well region doping

A technology of light-emitting diodes and epitaxial growth, which is used in electrical components, circuits, semiconductor devices, etc. to increase the recombination efficiency, reduce the operating voltage, and reduce the luminous efficiency.

Inactive Publication Date: 2016-11-09
XIAMEN CHANGELIGHT CO LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the internal quantum efficiency of multiple quantum well active layer light-emitting diodes needs to be further improved, and how to obtain higher internal quantum efficiency has always been a hot spot in the development of light-emitting diode technology.

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  • Epitaxial growth method of light-emitting diode with well region doping

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Embodiment Construction

[0036] The present invention will be described in detail below in conjunction with the accompanying drawings and specific embodiments.

[0037] refer to figure 1 As shown, the present invention discloses a light-emitting diode with well doping, on which a buffer layer, an unintentionally doped GaN layer, an n-GaN layer, an active region, an electron blocking layer, a p- GaN layer and ohmic contact layer.

[0038] The active region 10 is composed of a front quantum barrier 1, a V-type quantum well 2, a rear quantum barrier 3 and a quantum well 4, which are periodically stacked in sequence, and the V-type quantum well 2 is doped. The V-type quantum well 2 is n-type doped, and the doping concentration is ≧1E+18. Using high-concentration doping can reduce the resistance value of the entire active region 10 , and can effectively reduce the working voltage of the light-emitting diode after being fabricated into chips. The V-type quantum well 2 is preferably doped with Si.

[0039...

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Abstract

The invention discloses a light emitting diode epitaxial growth method with well region doping, which provides a substrate, on which a buffer layer, an unintentional doping layer and a first-type conductive layer are sequentially epitaxially grown from bottom to top; The pre-quantum barrier is grown on the layer; the V-type quantum well is then epitaxial on the pre-quantum barrier; the post-quantum barrier is continued to be epitaxial on the V-type quantum well; The active region is formed by epitaxial growth; the electron blocking layer, the second-type conductive layer and the ohmic contact layer are then epitaxially grown on the active region from bottom to top. The invention can reduce the resistance value of the whole active area, reduce the working voltage and improve the luminous efficiency.

Description

technical field [0001] The invention relates to the technical field of light-emitting diodes, in particular to an epitaxial growth method of light-emitting diodes with well doping. Background technique [0002] Light-emitting diodes have the advantages of low power consumption, small size and high reliability. As the main light source, they have been developed rapidly. In recent years, the application fields of light-emitting diodes have expanded rapidly. Cost reduction has become an important direction. [0003] In the prior art, a light emitting diode with a multiple quantum well (multiple quantum well, MQW) structure as an active layer can obtain a relatively high internal quantum efficiency. However, the internal quantum efficiency of multiple quantum well active layer light-emitting diodes needs to be further improved, and how to obtain higher internal quantum efficiency has always been a hot spot in the development of light-emitting diode technology. The study found ...

Claims

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Application Information

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IPC IPC(8): H01L33/00
CPCH01L33/007
Inventor 林志伟陈凯轩张永卓祥景姜伟汪洋童吉楚方天足
Owner XIAMEN CHANGELIGHT CO LTD
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