Manufacturing method of no-easy-warpage large-dimension light emitting diode epitaxial wafer

Abstract

The invention discloses a manufacturing method of a no-easy-warpage large-dimension light emitting diode epitaxial wafer. The manufacturing method comprises the steps of performing vapor plating of an AlN buffer layer on the upper surface of a substrate; performing epitaxial growth of a GaN buffer layer on the AlN buffer layer; performing epitaxial growth of a composite buffer layer on the GaN buffer layer at a reaction temperature of about 1000 DEG C, wherein the composite buffer layer is composed of a GaN buffer layer and multiple buffer layers; after growth of the composite buffer layer, increasing the epitaxial growth temperature to above 1050 DEG C for realizing successive epitaxial growth of an unintentional doping layer and a first type conductive layer; reducing the epitaxial growth temperature to lower than 800 DEG C and performing epitaxial growth of an active layer on the first type conductive layer; and increasing the temperature to above 900 DEG C and successively growing a second type conductive layer and an ohmic contact layer on the active layer. The manufacturing method settles problems of epitaxial surface abnormity and electrical performance abnormity because of large warpage caused by temperature change in epitaxial wafer growth process in which the large-dimension substrate is utilized.

Description

technical field [0001] The invention relates to the technical field of light-emitting diodes, in particular to a method for manufacturing a large-size light-emitting diode epitaxial wafer that is not prone to warping. Background technique [0002] Such as figure 1 As shown, in the structure of the traditional large-scale light-emitting diode epitaxial wafer disclosed in the prior art, a buffer layer 20 is evaporated by PVD on the large-scale substrate 10, and the buffer layer 20 is an AlN buffer layer, or a GaN buffer layer, or An AlGaN buffer layer; growing an unintentionally doped layer (uGaN) 30 on the buffer layer 20; growing a first-type conductive layer (nGaN) 40 on the unintentionally doped layer 30; growing a first-type conductive layer (nGaN) 40 An active layer (MQW) 50 is grown on it; a second-type conductive layer (pGaN) 60 is grown on the active layer (MQW) 50 ; an ohmic contact layer (ITO) 70 is grown on the second-type conductive layer (pGaN) 60 . [0003] Su...

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Problems solved by technology

[0005] The purpose of the present invention is to provide a large-size light-emitting diode epitaxial wafer manufacturing method that is not prone to warping, so as to solve the problem of epitaxial surface anomalies and electrical properties caused by temperature changes in the process of growing epitaxial wafers due to temperature changes. abnormal problem

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