Method and device for preparing p-type zinc oxide crystal film by doping phosphorus

A zinc oxide, p-type technology, applied in semiconductor devices, gaseous chemical plating, semiconductor/solid-state device manufacturing, etc., can solve the problem of low industrial utilization value

Inactive Publication Date: 2008-02-27
ZHEJIANG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

The preparation methods are limited to methods such as molecular beam epitaxy, laser pulse deposition, magnetron sputtering and diffusion, and these methods have low industrial utilization value due to the quality of materials, preparation costs and other reasons

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  • Method and device for preparing p-type zinc oxide crystal film by doping phosphorus

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Embodiment Construction

[0019] The present invention will be further described below in conjunction with the accompanying drawings and specific examples.

[0020] With reference to Fig. 1, the device for preparing p-type zinc oxide crystalline thin film by doping phosphorus of the present invention comprises growth chamber 14, growth chamber and molecular pump 12, mechanical pump 13, organic zinc source carrier gas inlet pipeline 1, oxygen source gas inlet pipe Road 2 is connected to each other, flow controller 3 is respectively arranged on organic zinc source carrier gas inlet pipeline 1 and oxygen source gas inlet pipeline 2, substrate heater 5, sample holder 6 and thermal evaporator 15 are arranged in the growth chamber, thermal evaporation The device includes a quartz tube 7, the inlet of the quartz tube is connected to the oxygen source gas inlet line 2 through a valve 9, and the outlet of the quartz tube is in the reaction zone. Generally, the outlet end of the quartz tube is flat to ensure the ...

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Abstract

The invention includes following steps: cleaning out surface of substrate, putting the substrate inside growth cabinet of metal-organic chemical vapor deposition; pumping the growth cabinet to vacuum degree 10-2Pa at least; vaporizing phosphor source in solid state to gas state by using hot vaporizer, and inputting pure oxygen source gas of containing carrier gas of organic zinc source and dynamic phosphor source in gas state into the growth cabinet, where vacuum degree is 10-2Pa- 200Pa; heating substrate, then film of zinc oxide with phosphor being doped is developed on the substrate so as to obtain n type film of ZnO with phosphor being doped; annealing obtains p type ZnO film. Controlling zinc source, temperature etc, the method prepares n type ZnO film in different doping density. Controlling temperature and time in heat treatment, the method prepares p type ZnO film in different hole density. Advantages are: good repeatability and stability, applicable to photoelectronic device.

Description

technical field [0001] The invention relates to a preparation method and a device for a p-type zinc oxide crystal thin film. Especially the method and device for preparing p-type zinc oxide crystal thin film by doping phosphorus. Background technique [0002] As an important wide-bandgap semiconductor material, zinc oxide has great application prospects in the field of optoelectronics. However, in order to realize the application of ZnO-based devices, it is necessary to grow controllable n-type and p-type ZnO crystal thin films with a certain carrier concentration. At present, research on n-type zinc oxide crystal thin films has been relatively sufficient, and real-time, concentration-controllable growth of low-resistance n-type zinc oxide crystal thin films has been achieved. However, in order to prepare a light-emitting device from a zinc oxide crystal thin film, a zinc oxide pn junction must be prepared. Because zinc oxide has many intrinsic donor defects and defects c...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/205H01L33/00C23C16/40C23C16/44
Inventor 叶志镇陈福刚徐伟中赵炳辉朱丽萍黄靖云
Owner ZHEJIANG UNIV
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