Multi-quantum well-based light emitting diode and preparation method thereof

A technology for light-emitting diodes and multiple quantum wells, which is applied to semiconductor devices, electrical components, circuits, etc., can solve problems such as affecting the luminous efficiency of multiple quantum well-based light-emitting diodes, reducing the crystal quality of multiple quantum well layers, and improving atomic mobility. , the effect of improving crystal quality and improving efficiency

Pending Publication Date: 2022-08-02
JIANGXI ZHAO CHI SEMICON CO LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] In view of the deficiencies in the prior art, the object of the present invention is to provide a multi-quantum well-based light-emitting diode and its preparation method, aiming at solving the problem that the low-temperature grown InGaN quantum well layer reduces the crystal quality of the multi-quantum well layer in the prior art, Technical Problems Affecting Luminous Efficiency of Multiple Quantum Well Based Light Emitting Diodes

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  • Multi-quantum well-based light emitting diode and preparation method thereof
  • Multi-quantum well-based light emitting diode and preparation method thereof
  • Multi-quantum well-based light emitting diode and preparation method thereof

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Embodiment 1

[0038] see Figure 1-Figure 2 , shows a multi-quantum well-based light-emitting diode provided by the first embodiment of the present invention, the multi-quantum well-based light-emitting diode includes a substrate 100; wherein, the substrate 100 is a substrate for epitaxial layer growth, and the commonly used substrate 100 For sapphire substrate, SiO 2 Sapphire composite substrate, silicon substrate, silicon carbide substrate, gallium nitride substrate and zinc oxide substrate, in this embodiment, the material of the substrate 100 is sapphire, and sapphire has good light transmittance, high temperature resistance and corrosion resistance , The advantages of mature preparation process and low price, etc., are widely used in multi-quantum well-based light-emitting diodes.

[0039] A buffer layer 200, an undoped GaN layer 300, an N-type GaN layer 400, a multiple quantum well layer 500, an electron blocking layer 600 and a P-type GaN layer 700 are sequentially stacked on the su...

Embodiment 2

[0056] The second embodiment of the present invention provides a multi-quantum well-based light-emitting diode. The multi-quantum well-based light-emitting diode in this embodiment is different from the multi-quantum well-based light-emitting diode in the first embodiment in that:

[0057] The thickness of the quantum well layer is 3.2 nm. Other conditions are the same. The thickness ratio of the first GaN layer, the second GaN layer, the second quantum well sublayer, the first InGaN layer and the second InGaN layer is 1.5:1:1 : 4:1, the In composition of the second quantum well sublayer is graded from low to high from 0.05 to 0.25, the In composition of the first InGaN layer is 0.25, the In composition of the second InGaN layer is 0.25, the first GaN The growth temperature of the layer is 850°C, the growth temperature of the second GaN layer is decreased from 850°C to 810°C, and the growth is performed while decreasing, and the growth temperature of the second quantum well sub...

Embodiment 3

[0059] The third embodiment of the present invention provides a multi-quantum well-based light-emitting diode. The multi-quantum well-based light-emitting diode in this embodiment is different from the multi-quantum well-based light-emitting diode in the first embodiment in that:

[0060] The thickness of the quantum well layer is 3.7 nm. Other conditions are the same. The thickness ratio of the first GaN layer, the second GaN layer, the second quantum well sublayer, the first InGaN layer and the second InGaN layer is 1.5:1:1 : 4:1, the In composition of the second quantum well sublayer is graded from low to high from 0.05 to 0.25, the In composition of the first InGaN layer is 0.25, the In composition of the second InGaN layer is 0.25, the first GaN The growth temperature of the layer is 850°C, the growth temperature of the second GaN layer is decreased from 850°C to 810°C, and the growth is performed while decreasing, and the growth temperature of the second quantum well sub-...

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Abstract

The invention discloses a multi-quantum well-based light-emitting diode and a preparation method thereof, and the light-emitting diode comprises a substrate, and also comprises a buffer layer, a non-doped GaN layer, an N-type GaN layer, a multi-quantum well layer, an electron blocking layer and a P-type GaN layer which are sequentially stacked on the substrate. Wherein the multi-quantum well layer comprises a plurality of quantum well layers and quantum barrier layers which are periodically and alternately stacked, each quantum well layer sequentially comprises a first quantum well sub-layer, a second quantum well sub-layer and a third quantum well sub-layer, and the first quantum well sub-layer is arranged on the N-type GaN layer; the first quantum well sub-layer comprises a first GaN layer and a second GaN layer arranged on the first GaN layer, and the first GaN layer is arranged on the N-type GaN layer; the third quantum well sub-layer comprises a first InGaN layer and a second InGaN layer arranged on the first InGaN layer, the first InGaN layer is arranged on the second quantum well sub-layer, and the technical problem that in the prior art, due to the fact that an InGaN quantum well layer grows at a low temperature, the crystal quality of the multi-quantum well layer is reduced, and the light emitting efficiency of the multi-quantum-well-based light emitting diode is affected can be solved.

Description

technical field [0001] The invention relates to the technical field of semiconductor optoelectronics, in particular to a multi-quantum well-based light-emitting diode and a preparation method thereof. Background technique [0002] With the continuous development of semiconductor technology, group III nitride semiconductors represented by gallium nitride (GaN) are widely used in electronic and optoelectronic devices such as light emitting diodes (LEDs), lasers (LDs) and high electron mobility transistors (HEMTs). The ideal material has received extensive attention. Among them, the multi-quantum well-based light-emitting diode can change the band gap width by adjusting the In composition of the multi-quantum well layer, so that its emission wavelength can cover an extremely wide spectral range from near-ultraviolet to near-infrared. [0003] At present, the more common multi-quantum well-based light-emitting diodes use the multi-quantum well layer as the core light-emitting l...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/06H01L33/00
CPCH01L33/06H01L33/0062
Inventor 程龙郑文杰高虹曾家明胡加辉
Owner JIANGXI ZHAO CHI SEMICON CO LTD
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