A method for corroding sapphire graphic substrate by wet-process

A wet etching, patterned substrate technology, applied in lasers, electrical components, climate sustainability, etc., can solve the problems of limiting crystal quality, easy introduction of impurities, increasing stress, etc., to enhance radiation recombination, reduce costs, reduce The effect of small density

Active Publication Date: 2005-11-23
INST OF PHYSICS - CHINESE ACAD OF SCI
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  • Abstract
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  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The purpose of the present invention is to overcome when existing method prepares sapphire pattern substrate, easily introduce impurity, increase stress, limit the improvement of crystal quality; Adopt dry etching and easily cause the damage of substrate again, pollute the defect of substrate, Thereby providing a method for wet etching sapphire pattern substrate

Method used

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  • A method for corroding sapphire graphic substrate by wet-process
  • A method for corroding sapphire graphic substrate by wet-process
  • A method for corroding sapphire graphic substrate by wet-process

Examples

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Effect test

Embodiment 1

[0023] Embodiment 1, preparation sapphire pattern substrate 1

[0024] Using plasma-enhanced chemical vapor deposition (PECVD), a silicon dioxide mask layer with a thickness of 500nm is evaporated on the C-plane sapphire;

[0025] Utilize photolithography technology to photoetch a striped silicon dioxide mask pattern along the [11 20] direction on the C-plane sapphire on which the silicon dioxide mask layer has been evaporated, and the length of the silicon dioxide mask layer stripe pattern is 50mm, the width is 1μm, the width of the window area is 1μm, and the length is 50mm.

[0026] The substrate was put into an etching solution mixed with sulfuric acid and phosphoric acid with a volume ratio of 10:1, heated in a temperature-controlled furnace, etched at 200°C for 2 hours, taken out, rinsed with deionized water, and obtained The resulting substrate with a mesa height of 0.5 μm was etched.

[0027] Finally, the wet-etched substrate was put into a hydrofluoric acid solution...

Embodiment 2

[0031] Embodiment 2, preparation sapphire pattern substrate II

[0032] Using a method similar to that of Example 1, prepare a stripe pattern along the [1 100] direction on the C-plane sapphire, wherein the length of the stripe pattern on the silicon dioxide mask layer is 1 mm, the width is 0.1 μm, and the width of the window area is 0.2 μm . After wet etching with sulfuric acid solution at 600°C for 0.5 hours, the obtained sapphire pattern substrate II is as follows figure 2 As shown, the width of the mesa is 0.1 μm, the length is 1 mm, and the height is 3 μm; the width of the groove is 0.1 μm, and the length of the groove is 1 mm; the adjacent sides of the groove-like stripes are asymmetric planes.

Embodiment 3～7

[0033] Embodiment 3~7, prepare sapphire pattern substrate III~VII

[0034] According to the method of Example 1, sapphire pattern substrates III-VII with different patterns were prepared, which are listed in Table 1.

[0035] Reality

[0036] Compared with the GaN material grown on common substrates, the GaN material grown epitaxially on the pattern substrates II-VII provided by the present invention has a smaller half-width of the diffraction peak of the (002) plane in its X-ray diffraction spectrum, And in the photoluminescence spectrum, the luminescence peak caused by defects or impurities near 550 nanometers is suppressed, which shows that the graphic substrate provided by the invention improves the crystal quality.

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Abstract

This invention relates to humid erosion sapphire pattern underlay method, which comprises the following steps: adopting general C surface sapphire silicon dioxide mask layer coated; using technique of etching technique to the silicon dioxide mask pattern along [1100] or [1120] direction; using sulfur acid or mixture liquid of sulfur and phosphorus acids as erosion liquid underlay; finally using the rare hydrofluoric acid liquid to erode the mask layer to get the sapphire round underlay.

Description

technical field [0001] The present invention relates to a method for preparing a sapphire pattern substrate, in particular to a sapphire pattern substrate with periodic table-shaped and groove-shaped stripe patterns, which is applied to the epitaxial growth of semiconductor optoelectronic materials and is prepared by wet etching. bottom method. Background technique [0002] GaN is an important material for the fabrication of yellow, green, blue, white, and ultraviolet light-emitting diodes and laser diode optoelectronic devices. The growth of traditional GaN is carried out on substrates such as sapphire, silicon, and silicon carbide. The lattice constants and thermal expansion coefficients of these substrates are very different from those of GaN, which leads to the threading dislocation density of the GaN-based growth layer. up to 10 8 -10 10 cm -2 . The existence of high dislocation density limits the further improvement of the performance of optoelectronic devices, so...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/84H01L33/00
CPCY02P70/50
Inventor 陈弘王晶贾海强郭丽伟周均铭李卫汪洋邢志刚
Owner INST OF PHYSICS - CHINESE ACAD OF SCI
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