Growth method of light emitting diode epitaxial wafer

A technology of light-emitting diodes and growth methods, which is applied in the field of growth of light-emitting diode epitaxial wafers, and can solve the problems affecting the improvement of quantum efficiency and low activation efficiency of light-emitting diodes

Active Publication Date: 2021-01-22
HC SEMITEK ZHEJIANG CO LTD
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Problems solved by technology

[0004] However, since Mg is a deep-level acceptor, the activation efficiency is relatively low, so the number of holes that the P-type layer can provide is much smaller than the number of electrons, resul

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  • Growth method of light emitting diode epitaxial wafer
  • Growth method of light emitting diode epitaxial wafer

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Embodiment Construction

[0027] In order to make the purpose, technical solution and advantages of the present disclosure clearer, the implementation manners of the present disclosure will be further described in detail below in conjunction with the accompanying drawings.

[0028] figure 1 It is a flow chart of a method for growing a light-emitting diode epitaxial wafer provided by an embodiment of the present disclosure, as shown in figure 1 As shown, the growth method includes:

[0029] Step 101, providing a substrate.

[0030] Wherein, the substrate may be a sapphire substrate.

[0031] Step 102 , growing a low-temperature buffer layer, a high-temperature buffer layer, an N-type layer, an active layer, an electron blocking layer, and a P-type layer sequentially on the substrate.

[0032] Wherein, the low-temperature buffer layer is a GaN layer grown at low temperature, the high-temperature buffer layer is a GaN layer grown at high temperature, and the N-type layer is a Si-doped GaN layer for pro...

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Abstract

The invention provides a growth method of a light emitting diode epitaxial wafer, which belongs to the technical field of semiconductors. The growth method comprises the following steps of providing asubstrate, sequentially growing a low-temperature buffer layer, a high-temperature buffer layer, an N-type layer, an active layer, an electron blocking layer and a P-type layer on the substrate, after the P-type layer completely grows, conducting n times of annealing treatment on the P-type layer, n being larger than or equal to 2 and smaller than or equal to 8, growing a P-type GaN sub-layer onthe P-type layer every time the annealing treatment is carried out, and then conducting next annealing treatment on the P-type layer and the P-type GaN sub-layer until n-1 P-type GaN sub-layers grow on the P-type layer, and enabling the thickness of each P-type GaN sub-layer to be not more than 6nm. By the adoption of the growth method, the number of holes injected into the active layer can be increased, so that radiation recombination of electrons and holes in the active layer is improved, and finally the internal quantum efficiency of the light-emitting diode is greatly improved.

Description

technical field [0001] The present disclosure relates to the technical field of semiconductors, in particular to a method for growing an epitaxial wafer of a light emitting diode. Background technique [0002] A light-emitting diode (English: Light Emitting Diode, referred to as: LED) is a semiconductor electronic component that can emit light. As an efficient, environmentally friendly and green new solid-state lighting source, LED is a new generation of light source with broad prospects, and is being rapidly and widely used in traffic lights, car interior and exterior lights, urban landscape lighting, indoor and outdoor display screens and small-pitch displays. screen and other fields. [0003] The epitaxial wafer is the primary product in the LED manufacturing process. In related technologies, an LED epitaxial wafer includes a substrate and a low-temperature buffer layer, a high-temperature buffer layer, an N-type layer, an active layer, an electron blocking layer and a ...

Claims

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Application Information

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IPC IPC(8): H01L33/00H01L33/14H01L33/32
CPCH01L33/007H01L33/14H01L33/325
Inventor 姚振从颖董彬忠李鹏
Owner HC SEMITEK ZHEJIANG CO LTD
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