Growth method of light emitting diode epitaxial wafer

Abstract

The invention provides a growth method of a light emitting diode epitaxial wafer, which belongs to the technical field of semiconductors. The growth method comprises the following steps of providing asubstrate, sequentially growing a low-temperature buffer layer, a high-temperature buffer layer, an N-type layer, an active layer, an electron blocking layer and a P-type layer on the substrate, after the P-type layer completely grows, conducting n times of annealing treatment on the P-type layer, n being larger than or equal to 2 and smaller than or equal to 8, growing a P-type GaN sub-layer onthe P-type layer every time the annealing treatment is carried out, and then conducting next annealing treatment on the P-type layer and the P-type GaN sub-layer until n-1 P-type GaN sub-layers grow on the P-type layer, and enabling the thickness of each P-type GaN sub-layer to be not more than 6nm. By the adoption of the growth method, the number of holes injected into the active layer can be increased, so that radiation recombination of electrons and holes in the active layer is improved, and finally the internal quantum efficiency of the light-emitting diode is greatly improved.

Description

technical field [0001] The present disclosure relates to the technical field of semiconductors, in particular to a method for growing an epitaxial wafer of a light emitting diode. Background technique [0002] A light-emitting diode (English: Light Emitting Diode, referred to as: LED) is a semiconductor electronic component that can emit light. As an efficient, environmentally friendly and green new solid-state lighting source, LED is a new generation of light source with broad prospects, and is being rapidly and widely used in traffic lights, car interior and exterior lights, urban landscape lighting, indoor and outdoor display screens and small-pitch displays. screen and other fields. [0003] The epitaxial wafer is the primary product in the LED manufacturing process. In related technologies, an LED epitaxial wafer includes a substrate and a low-temperature buffer layer, a high-temperature buffer layer, an N-type layer, an active layer, an electron blocking layer and a ...

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Problems solved by technology

[0004] However, since Mg is a deep-level acceptor, the activation efficiency is relatively low, so the number of holes that the P-type layer can provide is much smaller than the number of electrons, resulting in more electrons unable to radiatively recombine with holes, and eventually from Overflow in the active layer seriously affects the further improvement of quantum efficiency in light-emitting diodes

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