Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

A kind of laser stripping film LED and preparation method thereof

A laser lift-off and thin-film technology, which is applied in the direction of semiconductor devices, electrical components, circuits, etc., can solve the problems of absolute efficiency enhancement that have not been reported, and achieve the goal of increasing radiation recombination and efficiency and light extraction efficiency, high light extraction efficiency, and improved uniformity Effect

Active Publication Date: 2016-02-17
PEKING UNIV
View PDF5 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Yang Zhizhong and others only realized the SP-enhanced LED structure on the surface of an ordinary chip, and there is no report on the absolute efficiency enhancement under large injection
At the same time, there is no report on the application of plasmonic structures in thin-film LEDs so far.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • A kind of laser stripping film LED and preparation method thereof
  • A kind of laser stripping film LED and preparation method thereof
  • A kind of laser stripping film LED and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0052] The present invention will be further described through the embodiments below in conjunction with the accompanying drawings.

[0053] Such as figure 1 As shown, the chip unit of the laser lift-off film LED of the present invention includes: a chip part and a substrate; the chip part includes: an n-type layer 1, which has periodic n-type blind holes corresponding to the protrusions of the n-electrode on the n-type layer , the quantum well 2 between the periodic n-type blind holes on the n-type layer, the p-type layer 3 on the quantum well, the periodic metal nanostructure 4 embedded on the p-type layer, and the p-type layer The p-electrode 5 on the top, the insulating layer 6 on the p-electrode and the sidewall of the n-type blind hole, the n-electrode 7 on the insulating layer, the n-electrode has periodic protrusions, and the periodic protrusions extend into the n-type layer Inside; the substrate includes an electrically and thermally conductive substrate 8 and an n-e...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
sizeaaaaaaaaaa
sizeaaaaaaaaaa
thicknessaaaaaaaaaa
Login to View More

Abstract

The invention discloses a laser stripping film LED (Light-Emitting Diode) and a preparation method thereof. A chip unit of the laser stripping film LED comprises a type n layer, a quantum well, a type p layer, a periodical metal nanometer structure, an electrode p, an insulating layer and an electrode n, wherein the type p layer is formed on the quantum well; the periodical metal nanometer structure is embedded into the type p layer; the abovementioned structures inversely cover on a substrate; and a bonding pad p is arranged at one corner of a chip. According to the laser stripping film LED, the coupling resonance functions of surface plasmons and a quantum well structure are utilized, so that the radiation compounding efficiency and light-emitting efficiency of the LED are increased greatly under bulk injection, and meanwhile, certain effects are achieved on green-yellow light and ultraviolet light LEDs with low light-emitting efficiency; laser scribing and corroding methods are adopted for partitioning the chip unit, so that the warping of an epitaxial wafer is reduced, and the processing difficulty and cost are lowered; and specific to the bonding pad p, a protection layer and silver layer evaporation process is adopted, so that the manufacturing process of the bonding pad p is simplified, and the process cost is lowered; and a hot phosphoric acid coarsening method is adopted, so that the process cost is lowered, and the light-emitting efficiency of the LED is increased.

Description

technical field [0001] The invention relates to a semiconductor chip preparation technology, in particular to a laser stripping film LED and a preparation method thereof. Background technique [0002] Thin-film light-emitting diode (LightEmittingDiode) LED chips have been used by many LED manufacturers since they were proposed by Schnitzer et al. in 1993 (Appl. Phys. Lett., 63(16), 2174(1993)). Compared with traditional LED chips, it has good heat dissipation, uniform current expansion, and excellent light emission structure, which is very suitable for the application of high-efficiency and high-power LEDs, and is currently a high-end product of LEDs. In particular, the recently published TFFC chips of LumiLEDs and UX:3 chips of Osram overcome the difficulties of preparing electrodes and bonding wires on thin films, and show good application prospects. However, the flip-chip, primer or flip-chip eutectic soldering process used by LumiLEDs has great process difficulty and hi...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/20H01L33/00
Inventor 陈志忠焦倩倩姜爽付星星姜显哲马健张国义
Owner PEKING UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com