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A kind of quantum dot solid film and preparation method thereof

A technology of quantum dots and solid-state films, which is applied in the manufacture of semiconductor/solid-state devices, chemical instruments and methods, and electrical solid-state devices. Achieve the effect of improving stability and life, enhancing transmission and radiation recombination

Active Publication Date: 2020-11-17
TCL CORPORATION
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  • Claims
  • Application Information

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Problems solved by technology

[0005] In view of the above-mentioned deficiencies in the prior art, the object of the present invention is to provide a quantum dot solid-state film and its preparation method, aiming at solving the problem of quantum dot solid-state film due to the existence of relatively large High thermal energy causes cross-linked organic molecules to fall off from the surface of quantum dots, which causes changes in the solid state film of quantum dots, such as cracks caused by close packing, which seriously affects the performance of quantum dot light-emitting diodes.

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  • A kind of quantum dot solid film and preparation method thereof

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Embodiment 1

[0051] The following uses red CdSe / ZnS quantum dots (the ligand is OA), Na 4 SnS 4 , ethanol preparation of quantum dot solid film as an example to introduce in detail.

[0052] 1. The preparation steps of red CdSe / ZnS quantum dots are as follows:

[0053] 1) Cadmium Cd(OA) 2 With Zinc Oleate Zn(OA) 2 Preparation of precursors:

[0054] Take 0.8mmol of cadmium oxide (CdO), 6mmol of zinc acetate {Zn(Ac) 2}, 8mL of oleic acid (OA) and 15mL of octadecene (ODE) were added to a three-necked flask, first vented at room temperature for 10 minutes, then heated to 170°C for 60 minutes, and then maintained at 170°C;

[0055] 2) Preparation of Selenium (Se) Precursor:

[0056] Weigh 4mmol of Se and add it to 4ml of trioctylphosphine (TOP), heat to 170°C for 30min, then cool down to 140°C;

[0057] 3) Preparation of sulfur (S) precursor:

[0058] Add 4mmol of S to 6mL of trioctylphosphine (TOP), heat to 170°C for 30min, then cool down to 140°C;

[0059] 4) After raising the tempe...

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Abstract

The invention discloses a quantum dot solid film and a preparation method thereof. The method comprises the steps of: providing an initial quantum dot solid film; immersing the initial quantum dot solid film in an inorganic salt solution to carry out a ligand exchange reaction, annealing to obtain a Ligand-exchanged quantum dot solid film: coating the metal amine complex solution on the ligand-exchanged quantum dot solid film and annealing to obtain the quantum dot solid film. The quantum dot solid film prepared by the above method in the present invention not only effectively enhances the transmission and radiative recombination of charges (electrons and holes) between the quantum dot solid film layers, but also does not cause similar organic Changes in the solid-state film of quantum dots caused by the shedding of molecules from the surface of quantum dots, such as cracks caused by close packing, affect the performance of the device, thereby further improving the stability and life of the device.

Description

technical field [0001] The invention relates to the technical field of quantum dot light-emitting diodes, in particular to a quantum dot solid film and a preparation method thereof. Background technique [0002] Quantum dot light-emitting diodes are an important technical direction in the field of new display technologies in the future because of their high color purity and enhanced image quality. [0003] There are many technical problems involving quantum dot light-emitting diodes, such as stability, lifetime, and efficiency. When improving and optimizing these technical problems, some of the existing technical means are to cross-link the solid-state film of quantum dots, mainly using some small organic molecules with bifunctional groups to bond metal elements on the surface of quantum dots. To improve the distance between quantum dots and quantum dots, the purpose of crosslinking can not only improve the transport of charges (electrons and holes) between quantum dot film...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L51/56H01L51/50H01L51/54C09K11/02C09K11/88B82Y30/00
CPCC09K11/025C09K11/883B82Y30/00H10K50/115H10K2102/00H10K71/00
Inventor 杨青松杨一行
Owner TCL CORPORATION
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