Epitaxial wafer of deep ultraviolet light emitting diode with bipolar AlN template layer

A technology of light-emitting diodes and template layers, applied in semiconductor devices, electrical components, circuits, etc., can solve the problems of high material difficulty, low carrier recombination efficiency, poor luminous efficiency of deep ultraviolet light-emitting diodes, etc., to improve luminous efficiency, The effect of promoting radiative recombination

Active Publication Date: 2021-11-02
HC SEMITEK ZHEJIANG CO LTD
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Problems solved by technology

However, the epitaxial growth technology of deep ultraviolet light-emitting diodes in the related art is not mature enough, and it is difficult to grow materials for high-performance deep ult

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  • Epitaxial wafer of deep ultraviolet light emitting diode with bipolar AlN template layer
  • Epitaxial wafer of deep ultraviolet light emitting diode with bipolar AlN template layer
  • Epitaxial wafer of deep ultraviolet light emitting diode with bipolar AlN template layer

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[0035] In order to make the objects, technical solutions, and advantages of the present disclosure, the present disclosure will be further described in detail below with reference to the accompanying drawings.

[0036] figure 1 This is a schematic structural diagram of an epitaxial wafer of a deep ultraviolet light emitting diode having a bipolar AlN template layer disclosed embodiments. like figure 1 Shown, this epitaxial wafer comprises a substrate 10 and a substrate 10 are sequentially formed on the AlN template layer 20, n-type AlGaN layer 30, a multiple quantum well layer 40 and the p-type layer 50.

[0037] figure 2 It is a block diagram of an AlN template layer provided in the embodiment of the present disclosure. like figure 2 Shown, having a plurality of first regions 203 and a plurality of second polarity polarity areas 20 on the surface of the AlN template layer 204 away from the substrate 10, a first polarity and a second polarity region 203 region 204 alternately in...

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Abstract

The invention provides an epitaxial wafer of a deep ultraviolet light emitting diode with a bipolar AlN template layer, and belongs to the technical field of photoelectron manufacturing. The epitaxial wafer comprises a substrate, and an AlN template layer, an n-type AlGaN layer, a multi-quantum well layer and a p-type layer which are sequentially formed on the substrate, wherein a plurality of first polarity areas and a plurality of second polarity areas are arranged on the surface, far away from the substrate, of the AlN template layer, the first polarity areas and the second polarity areas are alternately distributed in the same direction, the first polarity areas are in aluminum polarity, and the second polarity areas are in nitrogen polarity. According to the epitaxial wafer of the invention, the radiation recombination of carriers can be promoted, and the luminous efficiency of the deep ultraviolet light-emitting diode is greatly improved.

Description

technical field [0001] The disclosure relates to the technical field of optoelectronic manufacturing, in particular to an epitaxial wafer of a deep ultraviolet light-emitting diode with a bipolar AlN template layer. Background technique [0002] Light Emitting Diode (English: Light Emitting Diode, referred to as: LED), as a very influential new product in the optoelectronics industry, has the characteristics of small size, long service life, colorful colors, and low energy consumption. It is widely used in lighting, display screens , signal lights, backlight, toys and other fields. The core structure of the LED is the epitaxial wafer, and the production of the epitaxial wafer has a great influence on the photoelectric characteristics of the LED. [0003] Epitaxial wafers generally include n-type layers, multiple quantum well layers, and p-type layers. Deep ultraviolet light-emitting diodes are light-emitting diodes with a light-emitting wavelength of 200nm to 350nm. Howev...

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Application Information

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IPC IPC(8): H01L33/32H01L33/06H01L33/00
CPCH01L33/06H01L33/325H01L33/0066H01L33/0075
Inventor 丁涛龚程成尹涌梅劲
Owner HC SEMITEK ZHEJIANG CO LTD
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