Ultraviolet light-emitting diode with p-i-n type multi-quantum well structure

Abstract

The invention discloses an ultraviolet light-emitting diode with a p-i-n type multi-quantum well structure. The ultraviolet light-emitting diode is provided with a substrate, an AlN buffer layer, an n-type AlGaN layer, a p-i-n type multi-quantum well active region, an electron blocking layer, a p-type AlGaN layer, a p-type GaN ohmic contact layer, an n-type electrode which is arranged on the n-type AlGaN layer and a p-type electrode which is arranged on the p-type GaN ohmic contact layer distributed from bottom to top in sequence. According to the ultraviolet light-emitting diode with the p-i-n type multi-quantum well structure, the carrier concentration and injection efficiency can be improved; an electric field opposite to an original built-in electric field in direction can be formed by utilizing the concentration difference of carriers in adjacent regions with different doping concentrations, and the original built-in electric field between a p type region and an n type region can be weakened, and the quantum limited stark effect caused by the built-in polarized electric field is reduced,so that the radiation recombination efficiency of electrons and holes is improved, and the light emitting power of the ultraviolet light-emitting diode is enhanced.

Description

technical field [0001] The invention relates to the manufacturing field of semiconductor optoelectronic materials and devices, in particular to an ultraviolet light emitting diode with a p-i-n type multi-quantum well structure. Background technique [0002] AlGaN-based ultraviolet light-emitting diodes (UV-LEDs) have the advantages of low energy consumption, environmental friendliness, and adjustable emission wavelengths, and can be widely used in printing ink curing, high-density data information storage, sterilization, healthcare, water and air purification and other fields. Due to the lack of GaN or AlN homogeneous substrates, AlGaN-based UV-LEDs usually use heterogeneous substrates, such as sapphire, silicon carbide, silicon and other substrates for growth. However, due to the large lattice mismatch between the heterogeneous substrate and the polar c-plane sapphire and other heterogeneous substrates, there are strong spontaneous polarization and piezoelectric The polar...

AI Technical Summary

Problems solved by technology

The polarized electric field will cause the conduction band and valence band edge of the quantum well in the UV-LED to be tilted, so that the wave functions of electrons and holes are separated in space, resulting in a reduction in the probability of radiative recombination of electrons and holes, seriously Affect the internal quantum efficiency or luminous efficiency of UV-LED devices

[0003] In addition, when the Al composition of the p-type AlGaN layer of AlGaN-based UV-LEDs increases, the activation efficiency of p-type impurities (such as Mg) becomes low, which reduces the number of holes injected into the active region, and finally inhibits the UV- LED Light Output Capability

Images