Nitride light emitting diode with AIN quantum dots and manufacturing method thereof

Abstract

The present invention discloses a nitride light emitting diode with AIN quantum dots and a manufacturing method thereof. The nitride light emitting diode comprises a substrate, a buffer layer, an N-type nitride, multiple quantum wells with V-pits, P-type nitride, AIN quantum dots without Mg doping and P-type nitride and P-type contact layer with high Mg doping, an AIN quantum dot layer is inserted between the P-type nitride and the P-type nitride with high Mg doping, and the quantum dots uniformly block the terminal of a dislocation line through a multistep relaxation deposition method with high-resistance AIN quantum dots. The nitride light emitting diode with AIN quantum dots and the manufacturing method thereof are able to prevent current from flowing the dislocation line area, improve the backward voltage, reduce the electric leakage and improve the current lateral extension and ESD.

Description

technical field [0001] The invention relates to the field of semiconductor optoelectronic devices, in particular to a nitride light-emitting diode with AlN quantum dots and a manufacturing method thereof. Background technique [0002] Nowadays, light-emitting diodes (LEDs), especially nitride light-emitting diodes, have been widely used in the field of general lighting due to their high luminous efficiency. Nitride light-emitting diodes are generally epitaxial on heterogeneous substrates. Due to lattice mismatch and thermal mismatch, a large number of dislocations and defects will be generated. Although some dislocations can be reduced by structural design, there are still a large number of dislocations that will extend When the P-type layer forms a leakage channel, electrons will tend to flow to the dislocation line with lower resistance, reducing the lateral expansion of the current, resulting in ESD deviation and leakage. [0003] In view of the performance problems of t...

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Problems solved by technology

Nitride light-emitting diodes are generally epitaxial on heterogeneous substrates. Due to lattice mismatch and thermal mismatch, a large number of dislocations and defects will be generated. Although some dislocations can be reduced by structural design, there are still a large number of dislocations that will extend When the P-type layer forms a leakage channel, electrons will tend to flow to the dislocation line with lower resistance, reducing the lateral expansion of the current, resulting in ESD deviation and leakage

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