SiC power device

A technology of power devices and N-type semiconductors, which is applied to semiconductor devices, electrical components, diodes, etc., can solve the problems of inability to adopt silicon-based conventional reverse conduction structures, slow turn-off speed of SiCIGBT, and large reverse recovery charge, etc., to achieve Elimination of minority carrier injection effect, small electric field reduction effect, and small leakage current effect

Active Publication Date: 2020-02-07
UNIV OF ELECTRONIC SCI & TECH OF CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The purpose of the present invention is to propose a new type of SiC MOSFET and IGBT anti-parallel body diode conduction voltage drop, large revers

Method used

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Embodiment 1

[0062] This embodiment provides a SiC MOSFET device integrating a PN junction body diode, and its cell structure is as follows figure 1 As shown, it includes: an N-type lightly doped region 1 as a withstand voltage region;

[0063]An N-type heavily doped ohmic contact region 14 disposed on the lower surface of the withstand voltage region 1, and an anode metal 3 covering the lower surface of the N-type heavily doped ohmic contact region 14;

[0064] Two separate gate deep grooves arranged on the upper surface of the withstand voltage region 1; the gate deep grooves are composed of an oxide layer 7 on the groove wall and a conductor 8 filled in the groove wall, and the conductor 8 is covered with Gate electrode metal 9; the semiconductor surfaces on the outside of the two gate deep grooves are respectively provided with a P-type semiconductor region base region 5, and the base region 5 is in contact with the groove wall; The contacted N-type heavily doped region 12 as the cat...

Embodiment 2

[0069] This embodiment provides a SiC MOSFET device integrating an N-type anti-parallel Schottky diode, and its cell structure is as follows: figure 2 As shown, the difference from Embodiment 1 is that: the P-type semiconductor region 6 is also provided with an N-type semiconductor region 15, and the N-type semiconductor region 15 is located between two gate deep grooves, and the P-type semiconductor region The region 6 is divided into two parts, and the lower surface of the N-type semiconductor region 15 is in contact with the withstand voltage region 1, and the upper surface forms a Schottky contact with the cathode metal 10;

[0070] When the MOSFET conducts in the reverse direction, since the conduction voltage drop of the N-type Schottky diode is lower than that of the PN junction diode, only the N-type Schottky diode participates in conduction, thus avoiding the minority carrier injection effect and reducing the Conduction loss and reverse recovery loss, EMI, etc.

Embodiment 3

[0072] This embodiment provides a SiC MOSFET device integrating an N-type anti-parallel Schottky diode, and its cell structure is as follows: image 3 As shown, it differs from Embodiment 2 in that the two parts of the P-type semiconductor region 6 located on both sides of the N-type semiconductor region 15 respectively form ohmic contacts with the cathode metal 10 through the P-type heavily doped region 11 at the semiconductor surface.

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Abstract

The invention belongs to the field of power semiconductors, and particularly provides a SiC power device. The SiC power device comprises a SiC MOSFET and a SiC IGBT. For the SiC MOSFET device integrated with a PN junction body diode, the reverse recovery charge and related loss of the body diode can be greatly reduced, the reverse recovery peak current is reduced, and the EMI noise is reduced; forthe SiC MOSFET device integrated with an N-type Schottky diode or an integrated heterojunction diode, the voltage drop during reverse conduction of the MOSFET can be reduced, and the minority carrierinjection effect is eliminated, so that the conduction loss and reverse recovery loss of the diode are reduced; for the reverse conduction type SiC IGBT device integrated with the PN junction body diode, the reverse recovery charge and related loss of the body diode can be greatly reduced, the reverse recovery peak current is reduced, and the EMI noise is reduced; and moreover, for the reverse conduction type SiC IGBT device integrated with the N-type Schottky diode or the heterojunction diode, the voltage drop during reverse conduction of the reverse conduction IGBT can be reduced, the minority carrier injection effect is eliminated, and the conduction loss and reverse recovery loss of the diode are reduced.

Description

technical field [0001] The invention belongs to the field of power semiconductors, and specifically provides a SiC power device with low turn-on voltage drop, fast turn-off characteristics and integrated reverse fast recovery diode, including SiC MOSFET and SiC IGBT. Background technique [0002] As a new generation of power semiconductor devices, SiC power semiconductor devices have lower conduction loss, faster switching frequency and better thermal characteristics than traditional silicon-based devices. MOSFET and IGBT, which are mainstream products of power semiconductor devices, are favored among SiC materials. In MOSFET or IGBT applications, it is often necessary to connect a fast-recovery high-voltage freewheeling diode in anti-parallel. SiC MOSFET itself has a PiN body diode integrated; however, due to the large band gap of SiC, the inherent conduction voltage drop of its PN junction is about 3V, so the conduction loss of the body diode is very large; at the same ti...

Claims

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Application Information

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IPC IPC(8): H01L29/78H01L29/739H01L29/06
CPCH01L29/0696H01L29/7397H01L29/7804H01L29/7806H01L29/7813
Inventor 易波赵青蔺佳胡博钧陈星弼
Owner UNIV OF ELECTRONIC SCI & TECH OF CHINA
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