3results about How to "Reduced injection efficiency" patented technology

The application provides a GaN-based light-emitting diode epitaxial structure and a preparation method thereof, wherein a Zn source is introduced as a surface activator during the growth of a P-type AlGaN electron blocking layer, a P-type AlGaN electron blocking layer structure with a gradient distribution of Zn concentration along the direction of the P-type AlGaN electron blocking layer is constructed, and specifically, through the core role of the Zn surface activator and the innovative design of the gradient distribution of the Zn concentration, the valence band Ev is smoothly and non-peaked along the whole process, and the hole injection is smooth along the whole process under the premise of ensuring that the conduction band Ec is smoothly and non-peaked and the strong electron blocking capability is not lost.

The application discloses a high-voltage diode, which comprises a cathode, an N-type semiconductor substrate, an N-type semiconductor drift layer, a first oxidation part, a first P-type doped part, a second P-type doped part, a second oxidation part and an anode. The N-type semiconductor substrate is arranged on the cathode. The N-type semiconductor drift layer is arranged on the side of the N-type semiconductor substrate far from the cathode. The first oxidation part is located in the N-type semiconductor substrate and extends into part of the N-type semiconductor drift layer. The first P-type doped part is arranged in the N-type semiconductor drift layer and connected with the first oxidation part. The second P-type doped part is arranged on the side of the N-type semiconductor drift layer far from the cathode. The second oxidation part is located in the second P-type doped part and extends into part of the N-type semiconductor drift layer. The anode is arranged on the side of the second P-type doped part far from the cathode. In the application, the risk of electromagnetic interference (EMI) noise generation can be reduced by introducing the first P-type doped part.

This invention provides a high-voltage enhancement-mode HEMT device that suppresses current collapse, comprising a substrate, a GaN layer, and an Al layer. x Ga 1‑x N layer, Al x Ga 1‑x From left to right, the N-layer consists of a source, a P-GaN gate, a P-GaN hole injection structure, and a drain. A high-resistivity capping layer covers the P-GaN gate, gate metal, P-GaN hole injection structure, the upper surface of the drain, and the Al layer between the P-GaN gate source side and the drain. x Ga 1‑x In the upper surface region of the N-layer, the hole injection structure in this invention can be sufficiently close to the gate, allowing for more complete surface trap recombination. Simultaneously, it avoids long-distance surface charge transport, resulting in faster surface charge transfer and improved surface trap recombination efficiency, achieving the optimal hole injection effect. This invention suppresses current collapse without shortening the device drift region, thus avoiding a decrease in device breakdown voltage.