Trench-fs type IEGT structure and manufacturing method thereof

A manufacturing method and junction depth technology, applied in the Trench-fs type IEGT structure and manufacturing field, can solve the problems of gate oscillation, gate peak value, small anode injection dose, etc., and achieve the effect of increasing loss and suppressing gate voltage peak value.

Inactive Publication Date: 2019-07-23
XIAN LONTEN RENEWABLE ENERGY TECH
View PDF3 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Usually, in order to reduce the turn-off loss of the IGBT, the implant dose of the collector can be reduced, and a transparent anode can be used, but the implant dose of the anode is small, which will cause a peak value in the gate during a short circuit, or even gate oscillation, resulting in device failure
[0004] The Trench-fs type IEGT with a conventional structure has a small collector injection dose and a low collector hole injection efficiency, which will cause a spike in the gate voltage during a short circuit, and even gate voltage oscillations

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Trench-fs type IEGT structure and manufacturing method thereof
  • Trench-fs type IEGT structure and manufacturing method thereof
  • Trench-fs type IEGT structure and manufacturing method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0037] The present invention will be described in detail below in combination with specific embodiments.

[0038] The invention relates to a method for manufacturing a Trench-fs type IEGT structure, mainly by changing the structure of the collector, without increasing the hole injection efficiency of the collector, and suppressing the peak value of the gate voltage during the short circuit, which is beneficial to Trench-fs The switching characteristics and short-circuit characteristics of the type IEGT are compromised. The manufacturing method of the Trench-fs type IEGT structure is to inject the collector twice to form segmented collectors with different junction depths, and the photoresist used to form the p++ region on the back is the same Zhang Ban obtained a Trench-fs type IEGT structure capable of compromising switching and short-circuiting.

[0039] Specifically manufactured by the following steps:

[0040] Step 1: First select a silicon wafer with a suitable N-type r...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The present invention relates to a Trench-fs type IEGT structure and a manufacturing method thereof. A collector is injected in two times, to form segmented collectors with different junction depths,a photoetching board adopted for forming a p++ region on the back surface and a p dummy region on the front surface adopt the same board, and a Trench-fs type IEGT structure capable of compromising switching and short circuit is obtained. According to the novel Trench-fs type IEGT structure, under a low voltage, the hole injection efficiency of the collector is lower than that of a conventional structure, under a high voltage, the hole injection efficiency of the collector is higher than that of the conventional structure, the grid voltage peak value in a short circuit period can be suppressedwithout increasing loss, and the switching and the short circuit of the IEGT can be compromised.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a Trench-fs type IEGT structure and a manufacturing method. Background technique [0002] In order to coordinate the contradiction between IGBT on-state characteristics, switching characteristics and short-circuit characteristics, the electron injection enhancement effect (Injection Enhancement Effect, IE) is introduced in the IGBT, which can not only strengthen the conductance modulation effect when the IGBT is turned on, but also limit the collection The injection of electrode holes compromises the on-state characteristics and switching characteristics of the IGBT. [0003] At present, in order to suppress the Vge peak value during the short circuit, it is mainly by increasing the hole injection dose of the back collector, and increasing the injection dose of the collector to improve the short circuit capability of the IEGT, which will inevitably increase the turn-off lo...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/331H01L29/739
CPCH01L29/66348H01L29/7397
Inventor 周宏伟刘杰刘鹏飞闫宏丽徐西昌
Owner XIAN LONTEN RENEWABLE ENERGY TECH
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap