Trench-fs type IEGT structure and manufacturing method thereof

Abstract

The present invention relates to a Trench-fs type IEGT structure and a manufacturing method thereof. A collector is injected in two times, to form segmented collectors with different junction depths,a photoetching board adopted for forming a p++ region on the back surface and a p dummy region on the front surface adopt the same board, and a Trench-fs type IEGT structure capable of compromising switching and short circuit is obtained. According to the novel Trench-fs type IEGT structure, under a low voltage, the hole injection efficiency of the collector is lower than that of a conventional structure, under a high voltage, the hole injection efficiency of the collector is higher than that of the conventional structure, the grid voltage peak value in a short circuit period can be suppressedwithout increasing loss, and the switching and the short circuit of the IEGT can be compromised.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a Trench-fs type IEGT structure and a manufacturing method. Background technique [0002] In order to coordinate the contradiction between IGBT on-state characteristics, switching characteristics and short-circuit characteristics, the electron injection enhancement effect (Injection Enhancement Effect, IE) is introduced in the IGBT, which can not only strengthen the conductance modulation effect when the IGBT is turned on, but also limit the collection The injection of electrode holes compromises the on-state characteristics and switching characteristics of the IGBT. [0003] At present, in order to suppress the Vge peak value during the short circuit, it is mainly by increasing the hole injection dose of the back collector, and increasing the injection dose of the collector to improve the short circuit capability of the IEGT, which will inevitably increase the turn-off lo...

AI Technical Summary

Problems solved by technology

Usually, in order to reduce the turn-off loss of the IGBT, the implant dose of the collector can be reduced, and a transparent anode can be used, but the implant dose of the anode is small, which will cause a peak value in the gate during a short circuit, or even gate oscillation, resulting in device failure

[0004] The Trench-fs type IEGT with a conventional structure has a small collector injection dose and a low collector hole injection efficiency, which will cause a spike in the gate voltage during a short circuit, and even gate voltage oscillations

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