Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Trench MOSFET

A technology of trenches and trench gates, which is applied to electrical components, transistors, circuits, etc., can solve the problems of degraded avalanche breakdown characteristics of devices, reduce injection efficiency, improve avalanche breakdown characteristics, and reduce area Effect

Active Publication Date: 2011-03-23
FORCE MOS TECH CO LTD
View PDF1 Cites 10 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

When there is an applied voltage, the NPN bipolar transistor is easily turned on, which further deteriorates the avalanche breakdown characteristics of the device

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Trench MOSFET
  • Trench MOSFET
  • Trench MOSFET

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0065] The invention is explained in more detail below with reference to the accompanying drawings, in which preferred embodiments of the invention are shown. The invention can, however, be embodied in different ways and should not be limited to the embodiments described herein. For example, the description here refers more to N-channel trench MOSFETs, but clearly other devices are possible.

[0066] refer to Figure 3A A preferred embodiment of the invention is shown. The figure also shows Figure 2B or Figure 2C X of top view shown 1 -X 1 ’ sectional view. In the trench MOSFET according to this preferred embodiment, an N-type epitaxial layer 301 is formed on an N+ substrate 300, and a trench formed in the epitaxial layer is lined with a gate oxide 320 and filled with doped polysilicon Trench gates 311 are formed. The P-type body region 304 is formed in the epitaxial layer and is located between every two adjacent trench gates.

[0067] The N+ type source region 308...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a trench metal-oxide-semiconductor field effect transistor (MOSFET) structure and a manufacturing method thereof. Different from a source area of a trench MOSFET formed by a method in the prior art, the source area of the structure is formed by ion implantation and diffusion of majority carriers in the source area at the opening of a source body contact trench, so that the concentration distribution of the majority carriers of the source area is Gaussian distribution from the source body contact trench to a channel area along the surface of an epitaxial layer, and the junction depth of the source area is gradually reduced from the source body contact trench to the channel area. A trench MOSFET device with the structure has better avalanche breakdown property compared with the prior art. Correspondingly, in the manufacturing process, the invention discloses a manufacturing method only needing a mask plate for three times, and the production cost is greatly reduced.

Description

technical field [0001] The invention relates to a unit structure of a semiconductor power device, a device structure and a process manufacturing method. In particular, it relates to a trench MOSFET (Metal Oxide Semiconductor Field Effect Transistor) structure with improved avalanche breakdown characteristics and its manufacturing method using a three-layer mask. Background technique [0002] US Patent Publication No. US.6,888,196 discloses a trench MOSFET structure and manufacturing method, such as Figure 1A shown. The structure of the trench MOSFET includes: a substrate 100 of N+ conductivity type; an epitaxial layer 102 of N conductivity type; a plurality of trench gates 105; a body region 103 of P conductivity type and a source region 104 of N+ conductivity type. Wherein, the source region 104 is defined by the source region mask, and formed by ion implantation and subsequent diffusion, such as Figure 1B shown. Therefore, the source region 104 has the same doping con...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/088H01L29/78H01L29/36H01L21/8234H01L21/336
Inventor 谢福渊
Owner FORCE MOS TECH CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com