Epitaxial growth method for improving LED lighting efficiency

Abstract

The invention provides a novel LED epitaxial growth method which can effectively improve the lighting efficiency of LED epitaxial structures. The method comprises the links of N-GaN layer growth, multi-quantum well layer growth and P-GaN layer growth, wherein the multi-quantum well layer is of a structure of a plurality of pairs of AlxGa <1-x> N / InyGa <1-y> N, wherein x is more than 0 and less than 1, and y is more than 0 and less than 1; the multi-quantum well layer growth link includes three growth stages in sequence, wherein the AlxGa1-xN quantum barrier is subjected to p type doping in the first stage, the AlxGa1-xN quantum barrier is not doped in the second stage, and the AlxGa1-xN quantum barrier is subjected to n type doping in the third stage; a p type doped AlGaN stopping layer grows, and then the P-GaN layer growth link is performed.

Description

Technical field: [0001] The invention belongs to the preparation technology of semiconductor electronic devices, and in particular relates to a new LED epitaxial growth method. Background technique: [0002] LED lighting has become the third generation of high-efficiency light sources after incandescent lamps and energy-saving lamps due to its high luminous efficiency, long service life, strong safety and reliability, energy saving and environmental protection. At present, LEDs have been widely used in the fields of traffic lights, automobile tail lights, advertising display screens, mobile phone TV backlights and white lighting. The production of a normal LED lamp bead generally goes through the following steps: epitaxial growth section, chip section and packaging section. Among them, the epitaxial growth section determines the brightness of LEDs exceeding 80%, which is the core technology of the entire industrial chain. Epitaxial growth is to use MOCVD technology to desi...

AI Technical Summary

Problems solved by technology

Among them, the multi-quantum well layer is the core of light emission. Generally speaking, the main light-emitting layer of the multi-quantum well layer is a pair or two pairs of quantum wells close to P-GaN, and the remaining quantum wells do not contribute much to the light emission. The main reason is that The mobility of holes is not high, and they cannot effectively migrate from P-GaN to quantum wells to recombine with electrons, so that the quantum wells far away from P-GaN lack sufficient recombination holes to reduce the luminous efficiency.

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