10results about How to "Improve compound rate" patented technology

The embodiment of the invention relates to the photovoltaic field, and provides a photovoltaic cell and a manufacturing method thereof, a laminated cell and a photovoltaic module, the photovoltaic cell comprises a substrate with a front surface and a back surface opposite to each other along a first direction, and the back surface is provided with first metallized regions and first non-metallized regions which are alternately arranged; the tunneling layer and the doped polycrystalline silicon layer are located on the back face and are sequentially stacked in the first direction; the amorphous silicon layers are arranged at intervals and embedded in the part, located in the first metallization region, of the doped polycrystalline silicon layer, and the first thickness of the amorphous silicon layers is smaller than the second thickness of the part, located in the first non-metallization region, of the doped polycrystalline silicon layer in the first direction; the back electrodes are in one-to-one correspondence with the amorphous silicon layers and are at least in contact connection with the amorphous silicon layers, and the back electrodes are embedded into the amorphous silicon layers with at least partial thickness in the first direction. The embodiment of the invention is at least beneficial to improving the light absorptivity of the substrate and avoiding further permeation of the electrode so as to comprehensively improve the photoelectric conversion efficiency of the photovoltaic cell.

This invention relates to the field of semiconductor optoelectronic devices, specifically disclosing a Micro-LED epitaxial structure, which sequentially comprises a substrate, a buffer layer, an N-type GaN layer, a stress relief layer, a first superlattice layer, an electron modulation layer, a light-emitting layer, a hole modulation layer, a second superlattice layer, and a P-type GaN layer; the stress relief layer includes In... α Ga 1‑α The N-layer and the first GaN layer; the first superlattice layer includes In. x Ga 1‑x N-layer and second GaN layer; electronic modulation layer includes Al a Ga 1‑a The light-emitting layer includes an N-layer and a third GaN layer, and the light-emitting layer includes an In layer. y Ga 1‑y N quantum well layer and quantum barrier layer, hole modulation layer including Al b Ga 1‑b N layers and In c Ga 1‑c N-layer, the second superlattice layer includes In z Ga 1‑z The N-layer and the fourth GaN layer have the following parameters: y > x > α, y > z, a ≥ b, and the number of periods in the light-emitting layer is ≤ 8. Implementing this invention can improve the luminous efficacy and luminous uniformity of Micro-LEDs at low current densities.

The present invention discloses a wafer fusion integrated multi-junction long wavelength surface emitting laser and a manufacturing method, including: a surface emitting laser VCSEL structure and a modulator EOM structure; the surface emitting laser VCSEL structure includes a GaAs base substrate, a GaAs buffer layer, a first N-type doped DBR, a resonant cavity, a buried tunnel junction, a fill layer, and a P-type doped DBR from bottom to top; the modulator EOM structure includes a P-type doped DBR, a first waveguide layer, an absorption layer, a second waveguide layer, and a second N-type doped DBR from bottom to top; the surface emitting laser VCSEL structure and the modulator EOM structure share a P-type doped DBR. The present invention can significantly improve the heat dissipation problem, reduce the divergence angle of the emitted light, and improve the output beam quality.

This application relates to the field of solar cell technology, and more particularly to a solar cell, a tandem cell, and a photovoltaic module. The first textured structure of the metallized region includes a raised structure, which includes at least a platform structure. The platform structure includes a side surface and a top platform with micro-pyramids. Both the side surface and the micro-pyramids reflect incident light, which is beneficial to improving the absorption capacity of long-wavelength light. Furthermore, the combination of the side surface and the micro-pyramids helps to reduce the number of relatively large sharp peaks, reduces surface defects, and facilitates the deposition of a passivation layer, thereby reducing the recombination probability of charge carriers and improving the photoelectric conversion efficiency of the solar cell. At the same time, the top platform with micro-pyramids can also allow the electrode paste to fully fill the gaps, increasing the contact area between the electrode and the substrate, which helps to reduce the contact resistance and improve the charge carrier collection efficiency, thereby improving the photoelectric conversion efficiency.

The present invention discloses an epitaxial structure for Micro-LED and a preparation method thereof, and Micro-LED, which relates to the field of semiconductor optoelectronic devices. The epitaxial structure includes a substrate, a buffer layer, a non-doped GaN layer, an N-type GaN layer, a multi-quantum well layer, a hole transport layer, and a P-type GaN layer in sequence; the multi-quantum well layer includes an alternately stacked quantum well layer and a quantum barrier layer; the quantum well layer is In x Ga 1‑x N layer, the quantum barrier layer includes In y Ga 1‑y N layer, Al z Ga 1‑z N layer and B w Ga 1‑w N layer; x>y; the thickness of the quantum barrier layer is less than 10nm; the hole transport layer comprises Al α Ga 1‑α N layer, B β Ga 1‑β N layer and AlN layer; w>α>β. The implementation of the present invention can improve the light efficiency of Micro-LED at low current density and improve its display effect.

The application discloses a zinc-doped blue LED epitaxial structure and a preparation method thereof. The epitaxial structure comprises a substrate, a buffer layer, a non-intentionally doped GaN layer, an n-type GaN layer, a multi-quantum well light-emitting layer and a p-type region arranged in sequence, a first Zn-doped AlGaN composite layer is arranged between the n-type GaN layer and the multi-quantum well light-emitting layer, and a second Zn-doped AlGaN composite layer is arranged between the multi-quantum well light-emitting layer and the p-type region. The first and second Zn-doped AlGaN composite layers are both formed by pausing or reducing the III group source and introducing the Zn source to form a delta-doped interface during the growth of AlGaN, and then continuing to grow an AlGaN cover layer. The double-side Zn-doped structure can adjust the energy band distribution on both sides of the multi-quantum well, suppresses the electron leakage and improves the hole injection, so that the light-emitting efficiency and the light output power are improved.

The invention provides a shale reservoir fracture prediction method and a fracture depicting and describing tool, and the method comprises the steps: carrying out the decomposition of post-stack seismic data based on a multi-level multi-azimuth method, and obtaining N different levels of seismic decomposition data; performing spectral analysis and directivity optimization on the seismic decomposition data of each level, selecting the seismic decomposition data of the level x with the first high-frequency information rank and the seismic decomposition data of at least one level with more original effective seismic information, and performing superposition and combination to obtain high-resolution seismic data; and carrying out ant body attribute calculation based on a variance body, obtaining ant body seismic attributes, carrying out plane slice extraction of a target horizon, and obtaining a crack prediction result. According to the method, the recombination rate of the fracture prediction result and actual drilling fault and well leakage can reach 60% or above, and the shale reservoir fracture prediction precision is remarkably improved; the method has important guiding significance on actual exploration, development and production.

The application discloses a graphene short channel preparation method based on lateral etching, which comprises the following steps: firstly, forming a graphene layer and a metal layer on a substrate, and then forming a hard sacrificial mask on the metal layer; then, removing the metal layer outside the hard mask area by a chemical etching method, and etching the metal layer laterally at the edge of the mask area to form a graphene short channel; and finally, depositing metal based on the hard sacrificial mask to form a metal electrode on the other side. The preparation method of the application can obtain a graphene channel length which is not limited by the minimum line width of a patterning process equipment, and the graphene is not in contact with organic contaminants such as photoresist throughout the whole process, so that a higher channel carrier speed and a lower ohmic contact resistance are realized, the types of electrodes on both sides can be independently changed to construct an internal potential field, a high-speed and low-recombination-rate graphene channel is obtained, and then a high-speed photoelectric detector is realized, and the process is easy to control and has an array potential.

The application provides a shale reservoir fracture prediction method and a fracture characterization and description tool, and the method comprises the following steps: decomposing post-stack seismic data based on a multi-level multi-azimuth method to obtain N seismic decomposition data of different levels; performing spectrum analysis and direction optimization on the seismic decomposition data of each level, selecting level x seismic decomposition data with the highest frequency information and at least one level seismic decomposition data with more original seismic effective information, and performing superposition combination to obtain high-resolution seismic data; performing ant body attribute calculation based on a variance body to obtain ant body seismic attributes, performing plane slice extraction on a target layer, and obtaining a fracture prediction result. The fracture prediction result can reach more than 60% in terms of the composite rate of actually drilled faults and well leakage, and the shale reservoir fracture prediction accuracy is significantly improved. The application has important guiding significance for actual exploration and development production.

The application discloses a low-H2O2-consumption nitrogen-defect and potassium-doped FeOCl / NvCN heterojunction photo-Fenton catalyst, a preparation method and application thereof, and belongs to the technical field of photochemical materials. 3+ And the slow oxidation-reduction cycle between Fe 2+ And the high photo-generated carrier recombination rate limit the application of FeOCl, and the problem that tetracycline hydrochloride (TC) in wastewater is difficult to degrade. The preparation method of the low-H2O2-consumption nitrogen-defect and potassium-doped FeOCl / NvCN heterojunction photo-Fenton catalyst utilizes an in-situ deposition method to prepare the photo-Fenton catalyst with the FeOCl / NvCN heterojunction, NvCN is prepared first, deionized water is added into a crucible, FeCl3.6H2O is added into the crucible to obtain a ferric chloride solution, the NvCN obtained in the step 4 is added into the solution to obtain a mixed liquid, and then ultrasonic treatment is conducted to obtain the low-H2O2-consumption nitrogen-defect and potassium-doped FeOCl / NvCN heterojunction photo-Fenton catalyst. The catalyst can be used for degradation of tetracycline hydrochloride. FeOCl / NvCN shows a good practical application prospect in actual water bodies.