156results about How to "Improve compound rate" patented technology

The present invention relates to an organic light emission diode device (OLED) structure, especially to a high-efficiency organic light emission diode device of a B-containing compound. The organic light emission diode device structure comprises an anode, a cavity injection/transmission layer, a luminescent layer, an electron injection/transmission layer and a cathode, wherein the luminescent layer comprises main body materials and doped materials; the main body materials are formed by signal materials and are also formed by mixing materials with different structures; and the doped materials are organic compounds containing boron, the energy level difference of the singlet state and the triplet state is not larger than 0.2ev, and the energy level of the singlet state and the energy level of the triplet state of the of the main body materials are both higher than that of the doped materials to prevent energy from passback and avoid reduction of the device luminescence efficiency. The present invention further provides a preparation method of the organic light emission diode device. The preparation method is utilized to obtain the organic light emission diode device which is high in efficiency, long in life and high in purity.

The invention relates to the technical field of organic photoelectric materials, and in particular, relates to an organic compound, an electronic element containing the same and an electronic device.The compound has a structure represented by a chemical formula 1', wherein one of R1, R2, R3 and R4 is a group defined in the specification, and the other three are selected from substituents such asalkyl, halogen and cyano; one of R5, R6, R7 and R8 is a group defined in the specification, the other three are selected from substituents such as alkyl, halogen and cyano, Y and Y1 are respectively and independently a group defined in the specification, and L and L1 are single bonds, aryl, heteroaryl and the like. By using the organic compound in an electronic component, the driving voltage, luminous efficiency, and life of the electronic component are improved.

The invention discloses an LED (Light Emitting Diode) epitaxial structure with a P (Positive) type superlattice and a preparation method thereof. The epitaxial structure comprises a substrate, wherein a GaN (Gallium Nitride) buffer layer, an undoped GaN layer, an n (negative) type GaN layer, a multi-quantum well luminous layer, a first P type GaN layer, a P type AlGaN (Aluminium Gallium Nitride) electronic blocking layer and a second P type GaN layer are sequentially arranged on the substrate from bottom to top, and the P type superlattice formed by a PInGaN (P type Indium Gallium Nitride) potential well layer and a PAlGaN potential barrier layer in a periodic interactive overlapping way is arranged between the P type AlGaN electronic blocking layer and the second P type GaN layer. The PInGaN potential well layer in the P type superlattice generates and constrains a great number of holes for the formation of a two-dimensional hole high-density state; the PAlGaN potential barrier layer hinders the escape of the holes; in such a way, the transverse spreading of the holes is improved, the electron overflow can be prevented, the hole injection efficiency is increased and the electron and hole recombination probability is improved; and therefore, the brightness of a chip can be improved by 5-10%.

The invention discloses a method for manufacturing a copper-aluminum double-layer medium-thick composite plate through a cold rolling manner. The method comprises following steps: 1) cleaning an aluminum plate and a copper plate in an immersion manner, removing oil of the plates, drying the plates, and cleaning the composite surfaces of the plates; 2) stacking and compressing the copper plate and the aluminum plate, and riveting the plates at a rolling bite end; 3) rolling the copper-aluminum composite plate blank through a two-roller roughing mill; 4) rolling the copper-aluminum composite plate through a three-roller intermediate mill; 5) rolling the copper-aluminum composite plate through a four-roller finishing mill; 6) rolling the copper-aluminum composite plate through a six-roller finishing mill to reach the required thickness; and 7) annealing the copper-aluminum composite plate. According to the invention, rolling is carried out through the rolling mills provided with working rolls having different roll diameters, so that the plastic deformation is increased, the composite ratio is improved, and a plate shape problem of the copper-aluminum double-layer medium-thick composite plate is solved as the working rolls are different in linear speed.

The invention discloses a fire-retardant coating with photo-catalytic performance and a preparation method thereof, belonging to the field of fire-retardant coatings. The coating comprises a base material, a catalyst, a charring agent, a foaming agent, a filler, a pigment, a solvent, a dispersant, a drier, a drying aid, a nano mother solution and the like, wherein the base material is aluminum dihydrogen phosphate, the catalyst is ammonium polyphosphate, the charring agent is pentaerythritol, the foaming agent is melamine, the filler is ultra-fine slag powder, the pigment is Cu-La/TiO2, the solvent is water, the dispersant is a BYK180 polymeric dispersant, the drier is lead oxide, the drying aid is zinc powder, and the nano mother solution is a nano SiO2 mother solution. The fire-retardant coating disclosed by the invention reduces the environment pollution to the maximum extent by using industrial waste residues as the filler; meanwhile, the coating has a function of realizing photocatalytic degradation of formaldehyde gas under a visible light source to endow conventional fire-retardant coatings with a brand-new function, and the fire-retardant coating accords with the development trend of national green ecological building materials.

The invention provides an arylamine compound and an organic luminescent device thereof, and relates to the technical field of organic photoelectric materials. The arylamine compound is obtained by connecting substituted or un-substituted carbazole, benzothiophene and a thick derivative of benzofuran onto an arylamine main body, so that with cavity transmission ability is relatively strong, good thermal stability is good, good film-forming property is good and synthesis is simple and easy easy-to to-operate synthesis. The arylamine compound can be applied to the organic luminescent device as acovering layer of or a cavity transmission layer, so that the problem that carrier transmission in the organic luminescent device is unstable and light out-coupling efficiency is low in the organic luminescent device can be effectively solved; and the organic luminescent device has the advantages of being high in luminescent efficiency and long in service life.

The invention provides a graphene nitrogen carbide quantum dot modified ZnS micrometer composite material as well as a preparation method and application thereof and belongs to the technical field ofsemiconductor composites. The method comprises the following steps: preparing ZnS(en)0.5 nanosheets; adding amino compounds into a porcelain boat, and raising the temperature and reacting in a tube furnace so as to obtain bulk phase g-C3N4 powder; finally, mixing and stirring the ZnS(en)0.5 nanosheets and the g-C3N4 powder, and carrying out a hydrothermal reaction in a reactor, thereby obtaining the graphene nitrogen carbide quantum dot modified ZnS micrometer composite material. The invention further provides application of the graphene nitrogen carbide quantum dot modified ZnS micrometer composite material serving as a photocatalyst. The photocatalyst can reach hydrogen production activity of 5600u mol h-1g-1 under visible light and has excellent photocatalytic stability, the hydrogen production activity is 140 times that of the ZnS under the same condition, and after four cycles, the catalytic effect is not obviously decreased.

The invention provides an organic compound, an organic electroluminescent device and an electronic device. The chemical structure of the organic compound comprises an adamantane spirofluorene ring anda dibenzo five-membered ring, and the organic compound has an excellent energy transfer function, can be used as a luminescent layer material in an electroluminescent device, improves the efficiencyof the organic electroluminescent device and prolongs the service life of the organic electroluminescent device.

The invention provides a novel LED epitaxial growth method which can effectively improve the lighting efficiency of LED epitaxial structures. The method comprises the links of N-GaN layer growth, multi-quantum well layer growth and P-GaN layer growth, wherein the multi-quantum well layer is of a structure of a plurality of pairs of AlxGa <1-x> N/InyGa <1-y> N, wherein x is more than 0 and less than 1, and y is more than 0 and less than 1; the multi-quantum well layer growth link includes three growth stages in sequence, wherein the AlxGa1-xN quantum barrier is subjected to p type doping in the first stage, the AlxGa1-xN quantum barrier is not doped in the second stage, and the AlxGa1-xN quantum barrier is subjected to n type doping in the third stage; a p type doped AlGaN stopping layer grows, and then the P-GaN layer growth link is performed.

The invention provides an aromatic amine compound and organic electroluminescent devices thereof, and relates to the technical field of organic photoelectric materials. According to the invention, a specific heteroaryl group and a bicyclic heptane group are introduced into a triarylamine structure to obtain the aromatic amine compound disclosed by the invention; the aromatic amine compound has good hole transport capability, high glass transition temperature, excellent thermal stability, excellent film-forming property, high refractive index and simple synthesis process, can be applied to theorganic electroluminescent devices as a hole transport layer and/or a covering layer, can effectively solve the problems of poor thermal stability, low luminous efficiency and short service life of the organic electroluminescent devices; and the advantages of high luminous efficiency and long service life of the organic electroluminescent devices are achieved.

The invention discloses a fire retardant coating with photocatalytic performance and a preparation method thereof. The fire retardant coating is obtained by mixing and stirring a base material, a catalyst, a charring agent, a foaming agent, filler, a pigment, a solvent, a disperser, a dryer, a drying aid and a nano-mother solution. By adopting the preparation method provided by the invention, the environment pollution can be furthest reduced, the recycling economical production of the product can be realized and about 20% of the cost can be reduced; the fire retardant coating prepared by the invention has excellent performances of high strength, rapid hardness, washing resistance, water resistance, alkali resistance and freezing resistance, particularly has an outstanding feature of degrading the formaldehyde gas in the room through photocatalysis and has a natural, non-toxic, pollution-free environment-friendly safety performance.

The invention provides a deep UV LED, which includes a substrate; an undoped buffer layer located on the surface of the substrate; an N type AlGaN layer on the undoped buffer layer and far away from the surface of the substrate; a multi-quantum well structure on the undoped buffer layer and far away from the surface of the substrate; and a P type AlGaN structure on the multi-quantum well structure and far away from the surface of the substrate, wherein the V type Al component of the P type AlGaN structure is gradually changed. The P type AlGaN structure with the gradually changed V type Al component is subjected to polarization doping. The Al component in the P type AlGaN structure with the gradually changed V type Al component is different from the Al component in the multi-quantum well structure. The P type AlGaN structure with the gradually changed V type Al component is far away from a P type GaN layer on the surface of the substrate. Based on the P type AlGaN structure with the gradually changed V type Al component, obtained electron holes are higher in concentration. Therefore, the internal quantum efficiency and the emission power of the UV LED are improved.

The invention discloses a hydrotalcite and bismuth molybdate heterojunction composite photocatalyst as well as a preparation method and application thereof. The catalyst is formed by assembling and compounding nickel-aluminum hydrotalcite nanosheets and bismuth molybdate nanosheets layer-by-layer by virtue of the interlayer electrostatic effect through a hydrothermal method. The preparation methodcomprises the following steps: firstly preparing Bi2MoO6; secondarily synthesizing a Bi2MoO6/NiAl-LDH semiconductor composite material: weighing Bi2MoO6 according to a formula, dissolving the weighedBi2MoO6 in water, and ultrasonically processing for standby use; then weighing Ni(NO3)2-6H2O and Al(NO3)3-9H2O according to a molar ratio of 2 to 1, adding a chelating agent, dissolving in water, andadjusting the pH to be alkaline by using CH4N2O; uniformly mixing and stirring the two solutions, adding the mixed solution into a reaction kettle, and heating and reacting for 48 hours at 100 to 150DEG C; after the reaction is ended, naturally cooling to the room temperature, centrifuging, washing, and drying to obtain the hydrotalcite and bismuth molybdate heterojunction composite photocatalyst. The semiconductor composite material is high in catalytic activity under the visible light; the lamellar self-assembling synthetic method has certain instruction significance for the synthesis andapplication of other photocatalysts.

The invention provides an anthracene-containing compound, a synthesis method thereof, and an organic electroluminescent device, and relates to the technical field of organic photoelectric materials. In the invention, different ligands are connected to a main structure formed by connecting anthracene and acridine, thus regulating molecular weight, [pi]-conjugation degree and electrophilicity of thematerial, enhancing charge transmission capability, balancing carrier injection and increasing glass transition temperature. The compound is not liable to crystallize and has good film forming performance. The synthesis method is simple and easy to carry out. The compound can be used for producing the organic electroluminescent device, especially as a luminescent layer main body and an electron transfer layer material in the organic electroluminescent device. The organic electroluminescent device has high luminous efficiency and long service life.

The invention discloses an OLED (organic light-emitting device) and relates to the technical field of organic light-emitting. The OLED is obtained from the compound in the general formula I as a holetransport layer and the compound in the general formula II as an electron transport layer. By means of an electron transport layer material and a hole transport layer material, electron migration speed of the electron transport layer can be increased, and the probability of carrier injection and recombination in the light emitting layer is increased by properly adjusting the hole transport layer,so that light-emitting efficiency of the device is increased and the service life of the device is prolonged; the driving voltage of the OLED can also be effectively reduced, and the problems of low light-emitting efficiency, short service life and high driving voltage in the prior art are solved; the materials are OLED material with excellent performance.

The invention discloses a preparation method of a power device, and belongs to the technical field of semiconductors. The method comprises the steps that an N type doped A-Si thin film layer is deposited on the upper surface of an N+ type substrate to form an N type A-Si field stop layer, after high temperature annealing, an N- epitaxial layer is formed on the N type A-Si field stop layer through an eptiaxial method, then an SiO2 thin film layer is formed on the upper surface of the N- eptiaxial layer, an annular area is exposed on the upper surface of the SiO2 thin film layer to form a protecting ring structure of a terminal; an annular area at the outermost periphery is exposed on a stop ring of the terminal, and then N+ type ion implantation and annealing are conducted to form a terminal area. According to the preparation method of the power device, the N type layer is formed through eptiaxial A-Si to be used as a field stop layer of the power device, rest carriers can be combined quickly, outward manifestation is that trailing currents which enable the power device to be shut off are shortened, shut-off time is shortened, and shut-off loss is reduced.

The invention discloses a combined type roller for rolling wave form corrugated composite boards and belongs to the technical field of rollers. The combined type roller for rolling wave form corrugated composite board belts comprises a roller shaft, a roller shell, a spline, a flat key, a locking check ring and a screw. The combined type roller is structurally characterized in that an external spline is arranged on the roller shaft, an internal spline groove is formed in the roller shell, the roller shell is arranged on the roller shaft, the spline plays a role in positioning and is a rectangular spline, the outer surface of the roller shell is in a wave form corrugation shape, the metal composite board belts with wave form corrugation can be rapidly rolled, the contact area of a metallic matrix can be increased by using the wave form corrugation roller for making blanks, the combination strength of composite board interfaces can be enhanced, and the recombination rate of composite board interfaces can be increased; a step-shaped shaft shoulder is arranged at one end of the roller shaft and axially fixes the roller shell; and locking positioning, in the axial and radial directions of the roller shaft, of the other end of the roller shell is achieved through the cooperation of the flat key, the locking check ring and the screw. According to the combined type roller, the centring precision of the roller is high, the stability of centring is extremely high, axial roller shifting is prevented, the roller shell can be rapidly dismounted, and the assembling period of the combined type roller is shortened.

A light emitting diode device may include a carrier, a p-type and n-type semiconductor layers, an active layer, a first electrode and a second electrode. The carrier has a growth surface and at least one nano-patterned structure on the growth surface, in which the carrier includes a substrate and a semiconductor capping layer disposed between the substrate and the n-type semiconductor layer. The n-type semiconductor layer and the p-type semiconductor layer are located over the growth surface of the carrier. The active layer is located between the n-type and p-type semiconductor layers, in which a wavelength [lambda] of light emitted by the active layer is 222 nm<=[lambda]<=405 nm, and a defect density of the active layer is less than or equal to 5*1010/cm2. The first and second electrodes are respectively connected to the n-type and p-type semiconductor layers. A carrier for carrying a semiconductor layer is also provided.

The invention discloses an LED quantum well structure, a manufacture method of the same, and an LED epitaxial wafer comprising the same. The structure comprises: a first GaN barrier layer arranged on an n-type GaN layer in an LED; a first buffer layer arranged on the first GaN barrier layer and including a first InGaN layer and a first GaN layer arranged alternately; a second GaN barrier layer arranged on the first buffer layer; a second buffer layer arranged on the second GaN barrier layer and including a second InGaN layer and a second GaN layer arranged alternately; and a quantum well light emitting layer arranged on the second buffer layer and including a third InGaN layer and a third GaN layer arranged alternately. The In concentration of the third InGaN layer is greater than that of the second InGaN layer and greater than that of the first InGaN layer. The crystal quality of the quantum well light emitting layer of the structure is improved.