LED quantum well structure, manufacture method of the same, and LED epitaxial wafer comprising the same
Patent Information
- Authority / Receiving Office
- CN · China
- Current Assignee / Owner
- XIANGNENG HUALEI OPTOELECTRONICS
- Publication Date
- 2014-09-24
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Abstract
Description
technical field
[0001] The invention relates to the technical field of semiconductor lighting, in particular to an LED quantum well structure, a manufacturing method thereof and an LED epitaxial wafer comprising the quantum well structure. Background technique
[0002] Light-emitting diode (LED), as a new type of high-efficiency, environmentally friendly and green solid-state lighting source, has the advantages of small size, light weight, long life, high reliability and low power consumption, making it widely used. In particular, with the rapid development of the LED industry, the application range of green LEDs has gradually expanded, and they are widely used in various fields such as indoor and outdoor large-scale billboards, traffic lights, backlights (computer and mobile phone display screens), and fixed color lighting systems. The market share of LED products related to green light is also expanding year by year, and the market has higher and higher performance require...