Double-sided Schottky controlled fast recovery diode device and preparation method

Abstract

The invention relates to a double-sided Schottky controlled fast recovery diode device and a preparation method. The fast recovery diode device comprises a semiconductor substrate, the semiconductor substrate comprises an N-type substrate and an N-type buffer layer, and an active region is arranged in the central area of the N-type substrate. On the cross section of the diode device, the active region comprises a number of alternately distributed active P-columns and active N-columns. Anode metal is arranged on the N-type substrate. The active P-columns are in ohmic contact with the anode metal on the N-type substrate, and the active N-columns are in Schottky contact with the anode metal on the N-type substrate. A number of alternately distributed cathode P- regions and cathode N+ regionsare arranged on the N-type buffer layer, the cathode N+ regions are in ohmic contact with cathode metal, and the cathode P- regions are in Schottky contact with the cathode metal. Fast reverse recovery can be realized, the dynamic loss can be reduced, the excellent softness can be improved, and the device has high reliability.

Description

technical field [0001] The invention relates to a diode device and a preparation method, in particular to a double-sided Schottky-controlled fast recovery diode device and a preparation method, belonging to the technical field of microelectronics. Background technique [0002] With the development of power electronics technology, the application of new power electronic devices in various frequency conversion circuits and chopper circuits puts forward higher requirements for fast diodes that are connected in parallel and act as clamps or buffers to reduce diode inverse The reverse recovery charge produces the main power consumption in the power switch device, reduces the high induced voltage added to the power switch device caused by reverse recovery, and improves the service life and reliability of the power switch device. In order to achieve the above purpose, the diode must have a short reverse recovery time trr, a small reverse recovery current IRM and soft recovery chara...

AI Technical Summary

Problems solved by technology

[0004] At present, the manufacturing of domestic fast recovery diodes is basically common PIN / MPS and other structures, and the manufacturing technologies are mostly based on minority carrier lifetime control technologies such as heavy metal Au / Pt doping and electron irradiation, and these technologies have some unavoidable problems. Defects, such as large reverse bias leakage under high temperature of electron irradiation, poor softness and reverse recovery produce high induced voltage, which affects circuit reliability, heavy metal Pt doping high temperature performance decline, negative temperature coefficient is not suitable for parallel circuits, etc.

Images