Quantum dot light emitting diode and preparation method thereof

A quantum dot light-emitting and diode technology, which is applied in the manufacturing of semiconductor/solid-state devices, electrical components, circuits, etc., can solve the problem of low carrier injection efficiency, etc., to improve the carrier injection efficiency and carrier injection efficiency. , the effect of promoting electron injection

Active Publication Date: 2020-01-31
TCL CORPORATION
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The purpose of the present invention is to overcome the above-mentioned shortcomings of the prior art, provide a quantum dot light-emitting diod

Method used

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preparation example Construction

[0024] On the other hand, the embodiment of the present invention also provides a method for preparing a quantum dot light-emitting diode, including the following steps:

[0025] preparing a first interface dipole layer for improving the work function of the anode on the anode or the quantum dot light-emitting layer; and / or

[0026] A second interface dipole layer for reducing the work function of the cathode is prepared on the cathode or the quantum dot light-emitting layer.

[0027] The preparation method of the quantum dot light-emitting diode provided by the embodiment of the present invention has a simple process. By preparing the first interface dipole layer that improves the work function of the anode and / or the second interface dipole layer that reduces the work function of the cathode, the final quantum dot The efficiency of carrier injection in light-emitting diodes is significantly improved, ultimately improving their light-emitting performance.

[0028] Specifical...

Embodiment 1

[0039] A quantum dot light-emitting diode, the preparation process of which is as follows:

[0040] Firstly, p-PFP-O was dissolved in a mixed solution of methanol and dimethyl sulfoxide with a mass ratio of 98:2 to prepare a mixed solution with a concentration of 0.02 wt%. PFNBr was then dissolved in methanol to prepare a solution with a concentration of 0.2 mg / mL.

[0041] A. Spin-coat a layer of p-PFP-O film on the ITO conductive glass as the first interface dipole layer;

[0042] B. Spin-coat a layer of TFB on the p-PFP-O layer;

[0043] C. Spin-coat a layer of CdSe / ZnS quantum dot luminescent layer on the TFB layer;

[0044] D. Spin-coat a ZnO electron transport layer on the CdSe / ZnS quantum dot light-emitting layer;

[0045] E. Spin-coat a layer of PFNBr film on the ZnO electron transport layer as the second interface dipole layer, and then anneal at 100°C for 30min;

[0046] F. Evaporating a layer of Al cathode layer on the PFNBr layer to obtain a quantum dot light-emi...

Embodiment 2

[0048] A quantum dot light-emitting diode, the preparation process of which is as follows:

[0049] First, p-PFP-O was dissolved in a mixed solution of methanol and dimethyl sulfoxide with a mass ratio of 99:1 to prepare a mixed solution with a concentration of 0.08wt%. PFNBr was then dissolved in methanol to prepare a solution with a concentration of 1 mg / mL.

[0050] A. Spin-coat a layer of PFNBr film on the ITO conductive glass as the first interface dipole layer, and then anneal at 100°C for 30min;

[0051] B. Spin-coat a layer of ZnO on the PFNBr layer;

[0052] C. Spin-coat a layer of CdSe / ZnS quantum dot luminescent layer on the ZnO layer;

[0053] D. Spin-coat a PVK layer on the CdSe / ZnS quantum dot luminescent layer;

[0054] E. Spin-coat a layer of p-PFP-O film on the PVK layer as the second interface dipole layer;

[0055] F. An Al cathode layer is vapor-deposited on the p-PFP-O layer to obtain a quantum dot light-emitting diode.

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Abstract

The invention belongs to the field of display technologies, and particularly relates to a quantum dot light emitting diode and a preparation method thereof. The quantum dot light emitting diode includes an anode, a cathode, and a quantum dot light emitting layer arranged between the anode and the cathode. A first interfacial dipole layer which is used for improving the work function of the anode is arranged between the anode and the quantum dot light emitting layer, and/or a second interfacial dipole layer which is used for reducing the work function of the cathode is arranged between the cathode and the quantum dot light emitting layer. The first interface dipole layer and/or the second interface dipole layer are arranged, so as to improve the carrier injection efficiency in the quantum dot light emitting diode, and finally improve the light emitting performance thereof.

Description

technical field [0001] The invention belongs to the field of display technology, and in particular relates to a quantum dot light-emitting diode and a preparation method thereof. Background technique [0002] Quantum dot light-emitting diode (QLED) is an emerging display device, its structure is similar to organic light-emitting diode (OLED), that is, hole transport layer, light-emitting layer and electron transport sandwich structure composed of layers. Compared with OLED, QLED is characterized by the use of more stable inorganic quantum dots as its luminescent material. The unique quantum size effect, macroscopic quantum tunneling effect, quantum size effect and surface effect of quantum dots make them exhibit excellent physical properties, especially their optical properties. Compared with organic fluorescent dyes, quantum dots prepared by colloidal method have the advantages of adjustable spectrum, high luminous intensity, high color purity, long fluorescence lifetime,...

Claims

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Application Information

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IPC IPC(8): H01L51/52H01L51/50H01L51/54H01L51/56
CPCH10K85/111H10K50/115H10K50/814H10K50/824H10K71/00
Inventor 梁柱荣曹蔚然钱磊
Owner TCL CORPORATION
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