LED epitaxial structure and making method thereof
A technology of epitaxial structure and manufacturing method, which is applied in the direction of electrical components, circuits, semiconductor devices, etc., can solve the problems of low hole concentration, which is difficult to solve, and the low hole concentration of P-GaN, so as to increase the hole injection area and reduce point defects Density and dislocation density, effect of improving hole injection efficiency
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[0038] Example 1
[0039] Please refer to figure 1 with figure 2 This embodiment provides an LED epitaxial structure, from bottom to top including: a substrate 1, a buffer layer 2, a first conductivity type semiconductor layer including a U-GaN layer 3 and an N-GaN layer 4, a superlattice 5, The multiple quantum well layer 6 with V-shaped pits and the electron blocking layer 7, the double hexagonal pyramid hole injection layer 8, the second conductivity type semiconductor layer including the P-GaN layer 9 and the contact layer 10, wherein the double hexagonal pyramid hole injection The layer 8 fills the V-shaped pit and is embedded in the second conductive type semiconductor layer.
[0040] Specifically, sapphire (Al 2 O 3 ), at least one of SiC, GaAs, GaN, ZnO, Si, GaP, InP, and Ge, preferably a flat sapphire substrate. Although not shown in the figure, the sapphire substrate may also be a patterned sapphire substrate ( PSS), therefore, the embodiment is not limited to this.
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Example Embodiment
[0047] Example 2
[0048] Please refer to Figure 3~Figure 12 , This embodiment provides a method for manufacturing an LED epitaxial structure, including the following process steps:
[0049] (1) Please refer to image 3 , Provide a substrate 1, you can choose sapphire (Al 2 O 3 ), at least one of SiC, GaAs, GaN, ZnO, Si, GaP, InP and Ge, preferably a patterned sapphire substrate (PSS).
[0050] (2) Please refer to Figure 4 , The buffer layer 2 is epitaxially grown on the substrate 1, preferably InAlGaN semiconductor material. The epitaxial growth method can be MOCVD (metal organic chemical vapor deposition) method, CVD (chemical vapor deposition) method, PECVD (plasma enhanced chemical vapor deposition) method , MBE (Molecular Beam Epitaxy) method, HVPE (Hydride Vapor Phase Epitaxy) method, preferably MOCVD, but the embodiment is not limited thereto.
[0051] (3) Please refer to Figure 5 , The U-GaN layer 3 and the N-GaN layer 4 are epitaxially grown on the buffer layer 2 in order...
Example Embodiment
[0059] Example 3
[0060] Please refer to Figure 13 The difference between this embodiment and embodiment 2 is that: embodiment 2 is to form an electron blocking layer 7 on the top surface of the multiple quantum well layer 6 with V-shaped pits before the hole injection layer 8 is grown. After the hole injection layer 8 is grown, a second conductivity type semiconductor layer is grown on the top surface of the multiple quantum well layer 6 with V-shaped pits and the long hole injection layer 8.
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