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LED epitaxial structure and making method thereof

A technology of epitaxial structure and manufacturing method, which is applied in the direction of electrical components, circuits, semiconductor devices, etc., can solve the problems of low hole concentration, which is difficult to solve, and the low hole concentration of P-GaN, so as to increase the hole injection area and reduce point defects Density and dislocation density, effect of improving hole injection efficiency

Active Publication Date: 2016-02-24
XIAMEN SANAN OPTOELECTRONICS TECH CO LTD
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AI Technical Summary

Problems solved by technology

At this stage, InGaN / GaN light-emitting diodes are regarded as the most potential light-emitting source today, but due to the lower hole concentration and lower hole mobility of P-GaN materials, the injection depth in multiple quantum wells (MQW) is relatively low. Limited, which seriously limits the further improvement of GaN-based LED luminous efficiency
[0003] At present, more and more theoretical research and experimental results have confirmed that V-shaped defects are very important hole injection channels in GaN-based LEDs, which greatly improve the hole injection efficiency, but the V-shaped pits (Pits) grown on the side walls The quantum barrier (QB) will still form a potential barrier, affecting the injection efficiency of holes into the quantum well (QW), thereby affecting the luminous efficiency; and the lower hole concentration of the P-GaN layer material is still difficult to solve

Method used

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  • LED epitaxial structure and making method thereof
  • LED epitaxial structure and making method thereof
  • LED epitaxial structure and making method thereof

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Embodiment 1

[0039] Please refer to figure 1 and figure 2 , this embodiment provides an LED epitaxial structure, which includes from bottom to top: a substrate 1, a buffer layer 2, a first conductivity type semiconductor layer including a U-GaN layer 3 and an N-GaN layer 4, a superlattice 5, A multi-quantum well layer 6 with a V-shaped pit, an electron blocking layer 7, a double hexagonal hole injection layer 8, a second conductivity type semiconductor layer including a P-GaN layer 9 and a contact layer 10, wherein the double hexagonal hole injection Layer 8 fills the V-shaped pit and embeds the semiconductor layer of the second conductivity type.

[0040] Specifically, the substrate 1 of this embodiment selects sapphire (Al 2 o 3 ), at least one of SiC, GaAs, GaN, ZnO, Si, GaP, InP and Ge, preferably a flat sapphire substrate, although not shown in the figure, the sapphire substrate can also be a patterned sapphire substrate ( PSS), therefore, embodiments are not limited thereto.

...

Embodiment 2

[0048] Please refer to Figure 3~Figure 12 , the present embodiment provides a method for manufacturing an LED epitaxial structure, including the following process steps:

[0049] (1) Please refer to image 3 , provide a substrate 1, can choose sapphire (Al 2 o 3 ), SiC, GaAs, GaN, ZnO, Si, GaP, InP and Ge at least one, preferably a patterned sapphire substrate (PSS).

[0050] (2) Please refer to Figure 4 , the buffer layer 2 is epitaxially grown on the substrate 1, preferably InAlGaN semiconductor material, and the epitaxial growth method can be MOCVD (metal organic chemical vapor deposition) method, CVD (chemical vapor deposition) method, PECVD (plasma enhanced chemical vapor deposition) method , MBE (Molecular Beam Epitaxy) method, HVPE (Hydride Vapor Phase Epitaxy) method, preferably MOCVD, but the embodiment is not limited thereto.

[0051] (3) Please refer to Figure 5 On the buffer layer 2, a U-GaN layer 3 and an N-GaN layer 4 are epitaxially grown in sequence to...

Embodiment 3

[0060] Please refer to Figure 13 The difference between this embodiment and embodiment 2 is that in embodiment 2, an electron blocking layer 7 is formed on the top surface of the multi-quantum well layer 6 with V-shaped pits before the hole injection layer 8 is grown, while in the present embodiment After the hole injection layer 8 is grown, a second conductivity type semiconductor layer is grown on the top surface of the multi-quantum well layer 6 with V-shaped pits and the long hole injection layer 8 .

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Abstract

The invention provides an LED epitaxial structure and a making method thereof. The LED epitaxial structure sequentially comprises, from bottom to top, a substrate, a first conductivity type semiconductor layer, a superlattice, a multiple-quantum well layer with V-shaped pits, a hole injection layer, and a second conductivity type semiconductor layer, and is characterized in that the hole injection layer is shaped as a double-hexagonal pyramid, fills the V-shaped pits, and is embedded into the second conductivity type semiconductor layer.

Description

technical field [0001] The invention relates to the field of semiconductor optoelectronic devices, in particular to an LED epitaxial structure and a manufacturing method. Background technique [0002] A light-emitting diode (Light Emitting Diode, referred to as LED in English) is a semiconductor solid-state light-emitting device, which uses a semiconductor PN junction as a light-emitting material, and can directly convert electricity into light. At this stage, InGaN / GaN light-emitting diodes are regarded as the most potential light-emitting source today, but due to the lower hole concentration and lower hole mobility of P-GaN materials, the injection depth in multiple quantum wells (MQW) is relatively low. Limited, severely restricting the further improvement of GaN-based LED luminous efficiency. [0003] At present, more and more theoretical research and experimental results have confirmed that V-shaped defects are very important hole injection channels in GaN-based LEDs, ...

Claims

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Application Information

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IPC IPC(8): H01L33/14H01L33/00
CPCH01L33/0075H01L33/14H01L33/12H01L33/007H01L33/06H01L33/24H01L33/32
Inventor 张洁朱学亮杜成孝刘建明徐宸科
Owner XIAMEN SANAN OPTOELECTRONICS TECH CO LTD
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