LED epitaxial structure and making method thereof

A technology of epitaxial structure and manufacturing method, which is applied in the direction of electrical components, circuits, semiconductor devices, etc., can solve the problems of low hole concentration, which is difficult to solve, and the low hole concentration of P-GaN, so as to increase the hole injection area and reduce point defects Density and dislocation density, effect of improving hole injection efficiency

Active Publication Date: 2016-02-24
XIAMEN SANAN OPTOELECTRONICS TECH CO LTD
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Problems solved by technology

At this stage, InGaN/GaN light-emitting diodes are regarded as the most potential light-emitting source today, but due to the lower hole concentration and lower hole mobility of P-GaN materials, the injection depth in multiple quantum wells (MQW) is relatively low. Limited, which seriously limits the further improvement of GaN-based LED luminous efficiency
[0003] At present, more and more theoretical research and experimental results have confirmed t

Method used

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  • LED epitaxial structure and making method thereof
  • LED epitaxial structure and making method thereof
  • LED epitaxial structure and making method thereof

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Example Embodiment

[0038] Example 1

[0039] Please refer to figure 1 with figure 2 This embodiment provides an LED epitaxial structure, from bottom to top including: a substrate 1, a buffer layer 2, a first conductivity type semiconductor layer including a U-GaN layer 3 and an N-GaN layer 4, a superlattice 5, The multiple quantum well layer 6 with V-shaped pits and the electron blocking layer 7, the double hexagonal pyramid hole injection layer 8, the second conductivity type semiconductor layer including the P-GaN layer 9 and the contact layer 10, wherein the double hexagonal pyramid hole injection The layer 8 fills the V-shaped pit and is embedded in the second conductive type semiconductor layer.

[0040] Specifically, sapphire (Al 2 O 3 ), at least one of SiC, GaAs, GaN, ZnO, Si, GaP, InP, and Ge, preferably a flat sapphire substrate. Although not shown in the figure, the sapphire substrate may also be a patterned sapphire substrate ( PSS), therefore, the embodiment is not limited to this.

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Example Embodiment

[0047] Example 2

[0048] Please refer to Figure 3~Figure 12 , This embodiment provides a method for manufacturing an LED epitaxial structure, including the following process steps:

[0049] (1) Please refer to image 3 , Provide a substrate 1, you can choose sapphire (Al 2 O 3 ), at least one of SiC, GaAs, GaN, ZnO, Si, GaP, InP and Ge, preferably a patterned sapphire substrate (PSS).

[0050] (2) Please refer to Figure 4 , The buffer layer 2 is epitaxially grown on the substrate 1, preferably InAlGaN semiconductor material. The epitaxial growth method can be MOCVD (metal organic chemical vapor deposition) method, CVD (chemical vapor deposition) method, PECVD (plasma enhanced chemical vapor deposition) method , MBE (Molecular Beam Epitaxy) method, HVPE (Hydride Vapor Phase Epitaxy) method, preferably MOCVD, but the embodiment is not limited thereto.

[0051] (3) Please refer to Figure 5 , The U-GaN layer 3 and the N-GaN layer 4 are epitaxially grown on the buffer layer 2 in order...

Example Embodiment

[0059] Example 3

[0060] Please refer to Figure 13 The difference between this embodiment and embodiment 2 is that: embodiment 2 is to form an electron blocking layer 7 on the top surface of the multiple quantum well layer 6 with V-shaped pits before the hole injection layer 8 is grown. After the hole injection layer 8 is grown, a second conductivity type semiconductor layer is grown on the top surface of the multiple quantum well layer 6 with V-shaped pits and the long hole injection layer 8.

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Abstract

The invention provides an LED epitaxial structure and a making method thereof. The LED epitaxial structure sequentially comprises, from bottom to top, a substrate, a first conductivity type semiconductor layer, a superlattice, a multiple-quantum well layer with V-shaped pits, a hole injection layer, and a second conductivity type semiconductor layer, and is characterized in that the hole injection layer is shaped as a double-hexagonal pyramid, fills the V-shaped pits, and is embedded into the second conductivity type semiconductor layer.

Description

technical field [0001] The invention relates to the field of semiconductor optoelectronic devices, in particular to an LED epitaxial structure and a manufacturing method. Background technique [0002] A light-emitting diode (Light Emitting Diode, referred to as LED in English) is a semiconductor solid-state light-emitting device, which uses a semiconductor PN junction as a light-emitting material, and can directly convert electricity into light. At this stage, InGaN / GaN light-emitting diodes are regarded as the most potential light-emitting source today, but due to the lower hole concentration and lower hole mobility of P-GaN materials, the injection depth in multiple quantum wells (MQW) is relatively low. Limited, severely restricting the further improvement of GaN-based LED luminous efficiency. [0003] At present, more and more theoretical research and experimental results have confirmed that V-shaped defects are very important hole injection channels in GaN-based LEDs, ...

Claims

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Application Information

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IPC IPC(8): H01L33/14H01L33/00
CPCH01L33/14H01L33/007H01L33/06H01L33/12H01L33/24H01L33/32H01L33/0075
Inventor 张洁朱学亮杜成孝刘建明徐宸科
Owner XIAMEN SANAN OPTOELECTRONICS TECH CO LTD
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