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RESURF HEMT device with N type floating buried layer

An N-type, floating technology, applied to semiconductor devices, electrical components, circuits, etc., can solve the problems of limiting gate voltage swing, achieve the effects of improving breakdown voltage, uniform electric field distribution, and improving electric field concentration effect

Active Publication Date: 2017-07-04
UNIV OF ELECTRONICS SCI & TECH OF CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the top layer of GaN and the gate electrode form an ohmic contact of holes. When the gate is conducting forward, the gate leakage current will be generated when the gate voltage is large, which limits the gate voltage swing.

Method used

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  • RESURF HEMT device with N type floating buried layer
  • RESURF HEMT device with N type floating buried layer
  • RESURF HEMT device with N type floating buried layer

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0030] Figure 4 A RESURF HEMT device with an N-type floating buried layer is shown. The devices in this example include:

[0031] Substrate 1, a buffer layer 2 located on the upper layer of the substrate 1, an N-type channel layer 4 located on the upper layer of the buffer layer 2, a barrier layer 5 located on the upper layer of the channel layer 4, and a passivation layer 9 located on the upper layer of the barrier layer 5 The two ends of the upper surface of the barrier layer 5 are respectively provided with a source electrode 6 and a drain electrode 7, and a gate electrode 8 is arranged between the source electrode 6 and the drain electrode 7; the source electrode 6 and the drain electrode 7 are ohmic contacts . It is characterized in that the buffer layer 2 is P-type doped, and the P-type buffer layer 2 has an N-type floating buried layer 3, and there is a distance between the N-type floating buried layer 3 and the channel layer 4; The N-type floating buried layer 3 ex...

Embodiment 2

[0034] Compared with Embodiment 1, the N-type floating buried layer of the device of this example is a multilayer structure, and other structures are the same as Embodiment 1, such as Figure 5 shown. Since the multi-layer N-type floating buried layer and the P-type buffer layer form multiple PN junctions, the vertical depletion width of the device can be further expanded, so as to further improve the electric field concentration effect at the drain terminal and optimize the surface electric field of the device to improve breakdown voltage.

Embodiment 3

[0036] Compared with Example 1, the N-type floating buried layer of the device in this example is laterally segmented doped, and other structures are the same as in Example 1, such as Figure 6 shown. Compared with Example 1, the use of lateral segmental doping can further optimize the electric field distribution in the body, increase the average electric field intensity, and further increase the off-state breakdown voltage of the device.

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Abstract

The invention belongs to the technical field of a semiconductor, and relates to an RESURF HEMT device with an N type floating buried layer. According to a technical scheme, a P type buffer layer and the N type floating buried layer are introduced; a RESURF effect is formed by 2DEG at the P type buffer layer and a channel so as to modulate a transverse electric field of a device; a PN junction is formed by the N type floating buried layer and the P type buffer layer; in a blocking state, internal electric field distribution in the N type floating buried layer is modulated, and an electric field concentration effect at an drain electrode end is effectively improved, without introducing an additional parasitic capacitor; and meanwhile, a new electric field peak is introduced at the left side tail end of the N type floating buried layer, so that the electric field distribution on the surface of the device can be more uniform, and the breakdown voltage of the device is improved consequently. The preparation process of the device disclosed by the invention is compatible with a conventional process.

Description

technical field [0001] The invention belongs to the technical field of semiconductors, and in particular relates to a high electron mobility transistor (High ElectronMobility Transistor, HEMT) device. Background technique [0002] High electron mobility transistors (HEMTs) based on GaN materials, due to high electron saturation velocity, high density two-dimensional electron gas (2DEG) and high critical breakdown electric field, make it in high current, low power consumption, high frequency and high voltage The switch application field has a huge application prospect. [0003] The key to power switching devices is to achieve high breakdown voltage, low on-resistance and high reliability. The critical breakdown electric field of GaN materials is ten times that of Si. At present, the withstand voltage of GaN power devices is far from reaching its theoretical limit. The reason is that The gate electric field concentration effect causes premature breakdown of the device, and th...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/778H01L29/06
CPCH01L29/063H01L29/778
Inventor 罗小蓉彭富杨超吴俊峰魏杰邓思宇张波李肇基
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA
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