Transistor with high electronic mobility

Abstract

The invention discloses a transistor with high electronic mobility. The transistor with the high electronic mobility comprises a substrate, a channel layer, a barrier layer, a source electrode, a drain electrode, a schottky grid electrode and at least one semiconductor field limiting ring, wherein the channel layer is located on the substrate, the barrier layer is located on the channel layer, the source electrode and the drain electrode are located on the barrier layer, the schottky grid electrode is located between the source electrode and the drain electrode, and the semiconductor field limiting rings are located at the position, between the schottky grid electrode and the drain electrode, on the barrier layer. According to the transistor with the high electronic mobility, the concentration of two-dimensional electron gas on the interface between the barrier layer and the channel layer can be adjusted, the concentration effect of an electric field on a grid electrode edge can be improved effectively, and the breakdown voltage of the transistor with the high electronic mobility is increased.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a high electron mobility transistor. Background technique [0002] GaN-based high electron mobility transistor (High Electron Mobility Transistor, referred to as HEMT) has a high two-dimensional electron gas concentration (Two Dimensional Electron Gas, referred to as 2DEG) and a large breakdown voltage, which has attracted extensive attention from scientific research institutions and enterprises. Making the breakdown voltage as high as possible while maintaining low on-resistance is one of the biggest challenges in current GaN-based HEMT research. [0003] GaN HEMT devices usually have a planar structure. When the HEMT is in the off state, a negative bias is applied to the gate, a positive bias is applied to the drain, and the source is grounded, which will cause electric field lines to gather at the edge of the gate near the drain. , an electric field spike is formed. G...

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Problems solved by technology

At the same time, Mg is generally used for p-type doping of GaN, and the activation energy of Mg is high, resulting in low doping efficiency, low hole concentration, and Mg has a serious memory effect, and diffusion into the barrier layer will also reduce the device performance. performance

Therefore, it is more difficult to apply the traditional field limit ring structure and technology in GaN-based HEMTs.

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