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Schottky diode and manufacturing method for Schottky diode

A Schottky diode and cathode technology, applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve problems such as increasing reverse leakage current, reducing width, and suboptimal breakdown voltage

Inactive Publication Date: 2014-11-05
GPOWER SEMICON
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  • Abstract
  • Description
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  • Application Information

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Problems solved by technology

[0004] However, in the above solutions, although the breakdown voltage of the tube in the off state can be increased theoretically by increasing the field plate, etc., in practical applications, these Ts made in the vertical trench (trench) Type metal grid, due to the concentration effect of the electric field at the edge of the trench, when the tube is applied with a reverse voltage, the Schottky barrier width between the metal and the two-dimensional electron gas channel is reduced, thereby increasing The reverse leakage current is reduced and the breakdown voltage is reduced, so that the breakdown voltage of the tube is not optimal

Method used

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  • Schottky diode and manufacturing method for Schottky diode
  • Schottky diode and manufacturing method for Schottky diode
  • Schottky diode and manufacturing method for Schottky diode

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Embodiment Construction

[0051] The technical solution of the present invention will be introduced in detail below in conjunction with the accompanying drawings.

[0052] See Figure 5a , Figure 5a is a schematic diagram of the Schottky diode structure in the first embodiment of the present invention.

[0053] The bottom layer is the substrate 1, and the substrate 1 can be one or a combination of GaN, Si, sapphire, silicon carbide, SOI, or other semiconductor materials; the first type of semiconductor is grown on the substrate 1 Layer 2, growing the second type semiconductor layer 3 on the first type semiconductor layer 2, the forbidden band width of the first type semiconductor layer is smaller than the forbidden band width of the second type semiconductor layer, the first type semiconductor layer can be GaN or other forbidden A semiconductor material with a relatively narrow band width or a combination thereof, the second type semiconductor layer is AlGaN, InAlN or other semiconductor materials w...

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Abstract

The invention provides a Schottky diode and a manufacturing method of the Schottky diode. The Schottky diode has the advantages that due to the fact that a groove structure with the wide upper portion and the narrow lower portion is mainly formed in a semiconductor layer, the concentration of two-dimensional electron gas below the Schottky metal inclined groove face can be effectively modulated, the Schottky barrier width and the Schottky barrier height can be increased, and therefore reverse electric leakage can be reduced; meanwhile, the concentration effect of an electric field at the edge of a groove can be further effectively improved, and the breakdown voltage of a device can be increased.

Description

technical field [0001] The invention belongs to the technical field of semiconductors, and in particular relates to a heterojunction-based Schottky diode and a method for manufacturing the Schottky diode, especially by forming a trench (trench) with a wide top and a narrow bottom on a semiconductor layer. ) structure, which can effectively modulate the two-dimensional electron gas concentration under the Schottky metal inclined groove surface, increase the Schottky barrier width and barrier height, thereby reducing the reverse leakage. At the same time, the concentration effect of the electric field at the edge of the trench can be effectively improved, and the breakdown voltage of the device can be improved. Background technique [0002] In the application field of high-voltage switches, it is hoped that the diode has a small reverse leakage, a large reverse withstand voltage, and a small forward conduction voltage drop. Among a variety of power electronic devices based on...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/872H01L29/06H01L21/329
CPCH01L29/872H01L29/0611H01L29/0638H01L29/417H01L29/66143
Inventor 陈洪维邓光敏刘飞航
Owner GPOWER SEMICON
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