Cavity type bulk acoustic wave resonator with pillar and preparation method thereof

A bulk acoustic wave resonator and pillar technology, applied in the direction of electrical components, impedance networks, etc., can solve the problems of low film quality, cavity corrosion residue, etc., and achieve the effects of less damage, high yield, and reduced complexity

Pending Publication Date: 2019-07-02
UNIV OF ELECTRONICS SCI & TECH OF CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] The present invention provides a cavity-type bulk acoustic resonator with pillars and a preparation method thereof to solve the problems of low film quality and formation of corrosion residues in the cavity when preparing cavity-type thin-film bulk acoustic resonators in the prior art question

Method used

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  • Cavity type bulk acoustic wave resonator with pillar and preparation method thereof
  • Cavity type bulk acoustic wave resonator with pillar and preparation method thereof
  • Cavity type bulk acoustic wave resonator with pillar and preparation method thereof

Examples

Experimental program
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Effect test

Embodiment 1

[0057] The preparation method of the cavity-type BAW resonator with pillars in this embodiment includes the following steps:

[0058] (a) Take a piezoelectric single crystal wafer, the piezoelectric single crystal wafer is a lithium tantalate wafer, perform ion implantation on the piezoelectric single crystal wafer to form an ion damage layer, and the implanted ions are H ions , the energy of implanted ions is 195KeV, and the implantation dose is 6×10 16 / cm 2 , the ion beam current is 1μm / cm -2 , the implantation depth is 6 μm to obtain a pyroelectric material, and then photolithography forms a pattern to be grown on the injection surface of the obtained pyroelectric material, and then utilizes magnetron sputtering to grow electrodes, the electrode material is Au, and finally passes through acetone Wash off the excess part to obtain a piezoelectric single crystal wafer with ion implantation and a bottom electrode, the thickness of the bottom electrode is 100nm; figure 1 Sh...

Embodiment 2

[0073] The preparation method of the cavity-type BAW resonator with pillars in this embodiment includes the following steps:

[0074] (a) Take a piezoelectric single crystal wafer, the piezoelectric single crystal wafer is a lithium tantalate wafer, perform ion implantation on the piezoelectric single crystal wafer, the implanted ions are As ions, the energy of the implanted ions is 500KeV; the implantation depth is 1.8 μm to obtain a pyroelectric material, and then grow an electrode on the injection surface of the obtained pyroelectric material by magnetron sputtering, the electrode material is Au, and then prepare a mask, and finally etch After removing the excess part, a piezoelectric single-crystal wafer with ion implantation and a bottom electrode can be obtained, and the thickness of the bottom electrode is 100nm;

[0075] (b) taking a piezoelectric single crystal wafer that has undergone ion implantation and has a bottom electrode, and forming a plurality of pillars on ...

Embodiment 3

[0080] The preparation method of the cavity-type BAW resonator with pillars in this embodiment is prepared by the same method as that of Embodiment 1, except that the upper surface area of ​​the bottom electrode is larger than the upper surface area of ​​the cavity.

[0081] Figure 9 It is a structural schematic diagram of the ion-implanted piezoelectric single crystal wafer obtained in step (b) and having a bottom electrode.

[0082] Figure 10 It is a structural schematic diagram of a piezoelectric single crystal wafer with pillars and cavities formed in the gaps between the pillars in step (b);

[0083] Figure 11 It is a structural schematic diagram of a cavity-type bulk acoustic wave resonator with pillars in step (d);

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Abstract

The invention provides a cavity type bulk acoustic wave resonator with a support column and a preparation method of the cavity type bulk acoustic wave resonator. The method comprises the following steps of: taking a piezoelectric single crystal wafer which is subjected to ion implantation and is provided with a bottom electrode; forming a plurality of supporting columns on one side, with the bottom electrode, of the piezoelectric single crystal wafer; forming a cavity at the gap of supporting columns, taking the substrate, bonding the substrate with one side of the piezoelectric single crystalwafer with the cavity, carrying out heat treatment on the substrate after bonding, stripping a film of the piezoelectric single crystal wafer, and producing a top electrode on the stripped side of the piezoelectric single crystal wafer to obtain the piezoelectric single crystal wafer. According to the technical scheme provided by the invention, a sacrificial layer does not need to be grown, etching and trepanning are not carried out on the thin film, the mechanical strength of the device is improved, and the thin film is not easily damaged; the cavity structure is formed before film formation, the rate of finished products is high, residues left by etching after film formation do not exist, and the influence of incomplete release on the device does not need to be considered.

Description

technical field [0001] The invention belongs to the field of MEMS microfabrication of single crystal thin film devices, in particular, the invention relates to a cavity-type bulk acoustic wave resonator with pillars and a preparation method thereof. Background technique [0002] Film Bulk Acoustic Wave Resonator (FBAR) is a single crystal thin film device, its structure mainly includes solid assembly type (SMR), back etching type and cavity type, cavity type film bulk acoustic resonator Compared with the solid assembly type, it is simpler and has higher mechanical strength than the back etching type. In recent years, with the improvement of processing technology and the rapid development of wireless communication, thin film bulk acoustic resonator has developed rapidly due to its high Q value (greater than 1000) and the advantages of being compatible with CMOS technology. The film bulk acoustic resonator converts electrical energy into sound waves through the inverse piezoe...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H03H3/02H03H9/17H03H9/19
CPCH03H3/02H03H9/171H03H9/19H03H2003/023
Inventor 帅垚吴传贵罗文博
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA
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