High voltage light-emitting diode and manufacturing method thereof

Abstract

The invention relates to a manufacturing method of a high voltage light-emitting diode. The manufacturing method of the high voltage light-emitting diode comprises the steps of forming an insulating buffer layer on a substrate; forming an n-type semiconductor layer, an active layer and a p-type semiconductor layer on the insulating buffer layer; patterning the n-type semiconductor layer, the active layer and the p-type semiconductor layer, then etching the n-type semiconductor layer, the active layer and the p-type semiconductor layer to form grooves till the insulating buffer layer is exposed out of the bottoms of the grooves, forming a plurality of isolated luminous units through the grooves; and forming metal interconnecting wires, and connecting the adjacent luminous units in series. The manufacturing method is characterized in that the grooves are 2.5mu m-4mu m deep. By adopting the manufacturing method of the high voltage light-emitting diode, the damages to the active area of LED (light-emitting diode), which are caused by the long-term plasma bombardment, are reduced, and the luminous degree of LED is improved.

Description

technical field [0001] The invention relates to a high-voltage flip-chip light-emitting diode chip. More specifically, the present invention relates to a high-voltage LED chip structure with an insulating buffer layer and a manufacturing method thereof. Background technique [0002] Light-emitting diodes (LEDs) have the advantages of long life, energy saving, environmental protection, and rich colors. Therefore, with the development of technologies such as epitaxy, chips, and packaging, and the further improvement of luminous efficiency, LEDs have been gradually used in lighting, display, medical treatment, etc. each field. Traditional gallium nitride-based light-emitting diodes work under DC voltage, the voltage range is 2.9-3.5V, and the working current is usually 20mA. In order for light-emitting diodes to achieve the brightness required for general lighting, the operating current of the LED chip must generally be increased to more than 100mA. Currently, 100mA, 350mA an...

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Problems solved by technology

However, in this prior art solution, such as figure 1 , since the epitaxial layer is to be etched from the p-type layer 13 to the sapphire substrate 10, it is necessary to etch an isolation deep groove 101 with a depth of 4-7um, so that the interconnection line 20 between each LED unit 100 is due to climbing through such Deep isolation grooves 101 lead to poor reliability, which leads to low yield of high-voltage LED chips, and greatly reduces the working life under high voltage, while the deep etching process and the thickened electrode process for realizing safe interconnection increase. The manufacturing cost of high-voltage LEDs, these problems have greatly affected the industrialization and marketization process of high-voltage LEDs, resulting in the current market utilization rate of high-voltage LEDs is still very low; in addition, the time required for deep groove etching is relatively long, when using ICP etching When, the long-term plasma bombardment will cause damage to the active area of ​​the LED and reduce the luminous brightness of the LED

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