Field effect transistor structure, manufacturing method thereof and chip device

Abstract

The invention relates to a field effect transistor structure, a manufacturing method thereof and a chip device. A transistor comprises a drain electrode epitaxial layer located at the bottom, a source electrode layer located at the top, and a source electrode extension inverted fin and a grid electrode which are embedded in the drain electrode epitaxial layer. The grid electrode is arranged between the source electrode extension inverted fins, and symmetrical channels which are connected in parallel from the source electrode layer to the interior of the drain electrode epitaxial layer in pairs are formed in the two sides of the grid electrode. In a preferable example, paired symmetrical field resistors which are connected in parallel from the source electrode layer to the drain electrode epitaxial layer are also formed above the channels at the two sides of the grid electrode; in a preferable example, the drain epitaxial layer forms an under-gate floating antipole junction at the bottom part corresponding to the grid electrode; in a preferable example, the drain epitaxial layer forms a shield gate bottom floating antipolar column bottom junction at bottom portions corresponding to the source electrode extension inverted fins. According to the invention, a double-inverted-half-fin floating super-junction gate type field effect transistor framework is created for the first time, and the gain effect of uniformizing or helping uniformizing electron flows of the drain electrode on the back surface of the substrate and the source electrode on the top surface of the substrate is achieved.

Description

[0001] The priority basis of the present invention includes: application number 202110414351.7, application date 2021.04.16, and the invention application with the patent name "field-effect transistor structure and its manufacturing method, and chip device". technical field [0002] The invention relates to the technical field of semiconductor transistors, in particular to a field effect transistor structure, a manufacturing method thereof, and a chip device. Background technique [0003] As the key and important device of the semiconductor chip, the field effect transistor structure has a variety of structures, mainly including the following types: FinFET fin field effect transistor, JFET junction field effect transistor, surface field effect transistor, tunneling field effect transistor Transistors trench gate field effect transistor, split gate field effect transistor and super junction field effect transistor. Among them, the structure of FinFET fin field effect transist...

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Problems solved by technology

[0005] The main purpose of the present invention is to provide a field effect transistor structure. The main progress is to solve the uneven distribution of source electron current, incompatibility of product performance and reliability, and incompatibility of product performance and processing difficulty with the innovative transistor structure. compatibility issue

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