Eureka AIR delivers breakthrough ideas for toughest innovation challenges, trusted by R&D personnel around the world.

Preparation method of crystalline silicon solar cell textured structure

A technology of solar cells and crystalline silicon, applied in the field of solar cells, can solve the problems of crystal flower comparison, short life, poor uniformity, etc., and achieve the improvement of open circuit voltage and short circuit current, stability and uniformity, and photoelectric conversion efficiency Improved effect

Active Publication Date: 2016-11-09
CSI CELLS CO LTD
View PDF9 Cites 9 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Invention patent application WO2014120830 (A1) discloses a method for preparing crystalline silicon nano-texture, which controls the shape of nano-texture by annealing, but the method is complicated and not conducive to the needs of industrial production
[0006] However, it has been found in practical applications that the above-mentioned method has the following problems: (1) the first chemical etching solution in the step (2) of the above-mentioned method mainly has two functions, one is to etch the porous silicon layer formed by metal catalysis; The second is to clean the residual metal particles on the surface of the silicon wafer; yet, as the number of silicon wafers increases, the first chemical etching solution (i.e. HF / HNO) in step (2) 3 The Ag ions in the mixed solution) are more and more, and become HF / HNO rich in Ag ions 3 Mixed solution, and the silicon chip will again undergo metal ion catalyzed chemical etching reaction in this solution, which will affect the stability and uniformity of the textured structure, thereby affecting the electrical performance of the solar cell; (2) with the increase in the number of processed silicon chips increase, the Ag ions in the first chemical etching solution in the step (2) of the above-mentioned method are more and more, and the Ag ions will be attached to the silicon wafer again in reverse, and it is difficult to remove the Ag ion attached to the silicon wafer in the first process. Particles are washed clean, resulting in HF / HNO 3 The life-span of mixed solution is very short, thereby further increased cost; (3) because the existing first chemical etching liquid such as HF / HNO 3 The reaction speed of the system is fast and the heat release is large, which will cause the problems of chromatic aberration and uneven microstructure of different crystal planes; especially for polycrystalline silicon wafers, since polycrystalline silicon wafers are composed of crystal flowers with different crystal orientations, and the crystal flowers of each crystal flower Randomly distributed, and crystal flowers are obvious, so it is more likely to have problems such as large suede size and poor uniformity, obvious crystal flowers, slightly high reflectivity, and poor texture stability.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Preparation method of crystalline silicon solar cell textured structure
  • Preparation method of crystalline silicon solar cell textured structure

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0041] see figure 1 Shown, a kind of preparation method of textured structure of crystalline silicon solar cell comprises the steps:

[0042] (1) Put the silicon wafer into a hydrofluoric acid solution containing an oxidizing agent and a metal salt to form a porous layer structure; the temperature is 50°C, and the time is 10-1000s;

[0043] (2) washing with water;

[0044] Then use the first chemical etching solution to etch the surface; the first chemical etching solution is a mixed solution of hydrofluoric acid, nitric acid and citric acid; the temperature is 40° C., and the time is 10 minutes;

[0045] Wherein the concentration of hydrofluoric acid is 1mol / L, the concentration of nitric acid is 5mol / L, and the concentration of citric acid is 0.05mol / L;

[0046] (3) washing with water;

[0047] Then put the above-mentioned silicon chip into the second chemical etching solution for immersion to form a suede structure; the second chemical etching solution is alkaline solution...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a method for preparing a textured surface structure of a crystalline silicon solar cell, which comprises the following steps: (1) forming a porous layer structure on the surface of a silicon chip; (2) etching the surface with a first chemical etching solution to form the textured surface surface structure; the first chemical etching solution is a mixed solution of hydrofluoric acid, an oxidizing agent and an additive; the additive is acetic acid or citric acid. The present invention designs a new chemical etching solution, and uses the chemical etching solution to etch the surface of the porous layer structure to form a suede structure. The experiment proves that the reaction speed of the chemical etching solution of the present invention is controllable, so that the suede surface can be guaranteed. The stability and uniformity of the structure, and the stability of the electrical performance of the solar cell.

Description

technical field [0001] The invention relates to a method for preparing a textured surface structure of a crystalline silicon solar cell, belonging to the technical field of solar cells. Background technique [0002] With the wide application of solar cell components, photovoltaic power generation occupies an increasingly important proportion in new energy and has achieved rapid development. Among the currently commercialized solar cell products, crystalline silicon (monocrystalline and polycrystalline) solar cells have the largest market share, maintaining a market share of more than 85%. [0003] At present, in the production process of solar cells, the textured structure on the surface of silicon wafers can effectively reduce the surface reflectance of solar cells, which is one of the important factors affecting the photoelectric conversion efficiency of solar cells. In order to obtain a good textured structure on the surface of crystalline silicon solar cells to achieve ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H01L31/0236H01L21/306B82Y40/00
CPCY02E10/50H01L31/02363B82Y40/00H01L21/30608
Inventor 邹帅王栩生邢国强
Owner CSI CELLS CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Eureka Blog
Learn More
PatSnap group products