Vertical GaN Schottky device structure with high breakdown voltage and low reverse electric leakage
A high breakdown voltage, reverse leakage technology, applied in electrical components, semiconductor devices, circuits, etc., can solve the difficulty of doping the second conductivity type, the reduction of the forward current density of the device, and the low activation rate of P+ ions, etc. problems, to achieve the effect of reducing leakage current, reducing reverse leakage current, and overcoming the low activation rate of impurities
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[0039]In describing the present invention, it should be understood that the terms "center", "longitudinal", "transverse", "upper", "lower", "front", "rear", "left", "right", " The orientation or positional relationship indicated by "vertical", "horizontal", "top", "bottom", "inner", "outer", "side", "end", "side" etc. is based on the Orientation or positional relationship is only for the convenience of describing the present invention and simplifying the description, and does not indicate or imply that the referred device or element must have a specific orientation, be constructed and operated in a specific orientation, and thus should not be construed as a limitation of the present invention. In addition, the terms "first" and "second" are used for descriptive purposes only, and cannot be interpreted as indicating or implying relative importance or implicitly specifying the quantity of indicated technical features. Thus, a feature defined as "first" and "second" may explicitl...
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