The invention discloses a trench type double barrier Schottky diode and a preparation method thereof. According to the invention, an active region of the Schottky diode is of a trench structure, the ion implantation concentration of a barrier modulation layer at the top of a table board is higher than the concentration of a trench and a drift layer; the depth of a groove in the active region is dt, and the width is Wt; the width of the table board is Wm, and the junction depth of a p+ region is dp; and the width Wt is greater than 1 micron, the width Wm is greater than 0.5 micron, the depth dtis greater than 0.5 micron, and the junction depth dp is greater than 0.5 micron. By using an image force barrier reducing method, low-barrier Schottky contact is formed on the table board, conventional-barrier Schottky contact is formed on the side wall of the table board, and conducting channels are increased. p+ doping is performed at the bottom of the trench, ohmic contact is carried out, a parallel pn diode is formed, and the surge capacity of the device is enhanced. Meanwhile, the Schottky conducting channels are shielded, and the voltage resistance and high temperature resistance of the device are enhanced. The SIC Schottky diode can reduce the barrier of the device and maintain excellent high voltage resistance, high temperature resistance and surge capability at the same time.