Method for carrying out image force compensation amendment on height of schottky barrier

A technology of Schottky potential and height, applied in special data processing applications, instruments, semiconductor/solid-state device testing/measurement, etc., can solve the problem of small high-frequency dielectric constant, lower Schottky barrier height, and lower potential barrier And other issues

Active Publication Date: 2010-08-25
INST OF MICROELECTRONICS CHINESE ACAD OF SCI
View PDF0 Cites 4 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] Using the J-V standard method to extract the height of the Schottky barrier will inevitably introduce the influence of the image force, thereby reducing the extracted height of the Schottky barrier
Compared with Si and

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for carrying out image force compensation amendment on height of schottky barrier
  • Method for carrying out image force compensation amendment on height of schottky barrier
  • Method for carrying out image force compensation amendment on height of schottky barrier

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0023] In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be described in further detail below in conjunction with specific embodiments and with reference to the accompanying drawings.

[0024] The Schottky effect is a phenomenon in which the potential energy generated by carriers decreases due to the induced image force when an electric field is applied. When an electron is x away from the metal, a positive charge will be induced on the metal surface. The attractive force between the electron and the induced positive charge is equivalent to the force that would exist between the electron and an equal positive charge at -x. This positive charge becomes the image charge. The attractive force is called the mirror force and can be expressed as: Here ε s 'Represents the dielectric constant, because there will be a relaxation time for electrons to reach the surface of the semiconductor, and the semiconduct...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention discloses a method for carrying out image force compensation amendment on height of a schottky barrier, wherein the height of the schottky barrier is extracted by a J-V standard method. The method comprises the following steps: combing a GaN high electron mobility transistor device structure, deducing the function of one dollar of a non-interfacial layer or an interface layer, according to the law that forward voltage barrier height image force impacts the barrier height, determining the accumulative impact on the potential barrier, caused by the reduced amount of the equivalentbarrier to approximately replace a certain voltage range; and using an MATLAB programme to solve the zone of an unitary high function, wherein a recent value of the zone, which is larger than the barrier height value obtained by the standard J-V measurement, is the height value of modified schottky barrier. The invention compensates the reduction of height of the barrier, caused by image force, rationally obtains height of the thermal equilibrium state barrier, and modifies the height of the barrier from a new perspective.

Description

technical field [0001] The invention relates to the technical field of analysis of Schottky characteristic parameters, in particular to a method for performing image force compensation correction on the potential barrier height in the Schottky characteristic parameters extracted by using the J-V standard method. Background technique [0002] When developing GaN HEMTs, in order to obtain very high transconductance, the quality of the Schottky structure formed by the gate and semiconductor GaN is very critical, and the accurate extraction of Schottky electrical parameters is of great significance for device modeling and reliability evaluation. , especially when comparing reliability experimental data, the precise measurement of Schottky electrical parameters is particularly important for the results. [0003] Using the J-V standard method to extract the Schottky barrier height will inevitably introduce the influence of the image force, thereby reducing the extracted Schottky b...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): G06F17/50H01L21/66
Inventor 王鑫华赵妙刘新宇
Owner INST OF MICROELECTRONICS CHINESE ACAD OF SCI
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap