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Schottky diode and manufacturing method thereof

A technology of Schottky diode and manufacturing method, applied in semiconductor/solid-state device manufacturing, semiconductor device, electrical components and other directions, can solve the problems of reduced driving current, increased leakage current, limited solid solubility of doping ions, etc. To achieve the effect of improving the driving ability and reducing the height

Inactive Publication Date: 2013-09-18
INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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  • Abstract
  • Description
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Problems solved by technology

However, for the existing metal-semiconductor contacts, due to the limited solid solubility of dopant ions, the semiconductor doping concentration cannot be further increased, but only hope to effectively reduce the Schottky barrier height
In addition, due to the high Schottky barrier height (SBH) of the source / channel in the open state of traditional Schottky barrier (SB) MOSFETs, the drive current is reduced; while the drain / channel SBH in the off state lower, making the leakage current increase

Method used

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  • Schottky diode and manufacturing method thereof
  • Schottky diode and manufacturing method thereof
  • Schottky diode and manufacturing method thereof

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Embodiment Construction

[0034] The features and technical effects of the technical solution of the present invention will be described in detail below with reference to the accompanying drawings and illustrative embodiments, and a Schottky diode that can effectively reduce the height of the Schottky barrier and a manufacturing method thereof are disclosed. It should be pointed out that similar reference signs indicate similar structures. The terms "first", "second", "upper", "lower", etc. used in this application can be used to modify various device structures or manufacturing processes. . Unless otherwise specified, these modifications do not imply the spatial, order, or hierarchical relationship of the modified device structure or manufacturing process.

[0035] The present invention provides a Schottky diode that can effectively reduce the height of the Schottky barrier and a manufacturing method thereof. The flowchart is Figure 7 Shown. Specifically refer to Figure 1 to Figure 6 The specific pro...

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Abstract

The invention discloses a Schottky diode and a manufacturing method thereof. The Schottky diode comprises a substrate and a metal silicide on the substrate. The Schottky diode is characterized in that an interface between the substrate and the metal silicide also comprises a dopant ion segregation area which is formed by being injected with the dopant ion, and then segregated and annealed. According to the novel Schottky diode and the manufacturing method thereof, the dopant ion is injected into the electrodes of the metal silicide and a drive is annealed so that the dopant ion is segregated on the interface between the substrate and the metal silicide. Therefore, a Schottky barrier height is effectively reduced (e.g. the Schottky barrier height is enabled to be lower than 0.1 eV) and then a drive capacity is enhanced.

Description

Technical field [0001] The invention relates to a semiconductor device and a manufacturing method thereof, in particular to a Schottky diode compatible with a CMOS process, which can effectively reduce the height of the Schottky barrier, and a manufacturing method thereof. Background technique [0002] Schottky diodes (SBD) are widely used in high-frequency circuits such as detectors, mixers and modulators due to their short reverse recovery time and low forward voltage, which means low loss. One of the key devices in the field of ultra-high-speed communication in the band domain. A typical SBD includes a metal with a high work function that is in contact with an N-type conductive epitaxial layer that is usually grown on an N-type substrate. In the IC process, SBD is usually fabricated on a common substrate with other semiconductor devices to save space and reduce costs, for example, compatible with CMOS or BiMOS processes. [0003] On the other hand, when the gate length of MOSF...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/872H01L21/329
Inventor 尚海平徐秋霞
Owner INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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