32 results about "Potential barrier height" patented technology

The invention relates to an LED structure comprising quantum barriers with gradient potential barrier heights and a method for manufacturing the LED structure, and belongs to the technical field of photoelectrons. The LED structure is provided with a plurality of quantum well layers, and the potential barrier heights of the quantum barriers are gradually reduced from an n side to a p side. Conveyance of electron holes is improved owing to the novel structure, so that the electron holes can be distributed in large quantities of quantum wells, and the intensity of polarization among the potential barriers is reduced in general. Owing to the factors, the distribution of the concentration of electrons and the distribution of the concentration of the electron holes are improved totally, the rate and the intensity of spontaneous radiation are increased totally, and accordingly, the internal quantum efficiency of a device is effectively enhanced, and outputted optical power of the device is effectively increased.

The invention discloses a resistive random access memory unit and a resistive random access memorizer. The memory unit comprises an upper electrode, a resistive functional layer, an intermediate electrode, an asymmetric tunneling potential barrier layer and a lower electrode, wherein the upper electrode, the resistive functional layer and the intermediate electrode are formed into a resistive memory part; the intermediate electrode, the asymmetric tunneling potential barrier layer and the lower electrode are formed into a strobe functional part; the resistive memory part and the strobe functional part share the intermediate electrode, and the strobe functional part can be placed on or beneath the resistive memory part; the asymmetric tunneling potential barrier layer is prepared from at least two materials different in potential barrier height, and the positive and negative tunneling currents passing through the resistive random access memory unit can be rectified and modulated in this way. According to the resistive random access memory unit and the memorizer disclosed by the invention, the asymmetric tunneling potential barrier layer is introduced to perform rectification so as to achieve strobe operation of a resistance unit. Meanwhile, the asymmetric tunneling potential barrier layer is free from doping or high-temperature annealing and is thin in thickness, so that the asymmetric tunneling potential barrier layer is beneficial for achieving three-dimensional high-density integration of the resistive random access memorizer.

The invention discloses a metal-oxide -semiconductor field effect transistor (MOSFET) capable of effectively reducing source drain contact resistance and a manufacturing method of the MOSFET. The MOSFET capable of effectively reducing the source drain contact resistance and the manufacturing method of the MOSFET comprises substrates, a grid stacking structure at the bottom of the substrate, source-drain zones, grate side walls and metal silicide, wherein the source-drain zones are arranged in the substrates of the two sides of the grid stacking structure, the grating side walls are arranged on the substrates of the two sides of the grid stacking structure, and the metal silicide is placed in the source-drain zones of the two sides of the grating side walls. The MOSFET capable of effectively reducing the source drain contact resistance and the manufacturing method of the MOSFET is characterized in that a fractional condensation zone of doping cation is arranged on an interface of the metal silicide the source-drain zones. According to the MOSFET capable of effectively reducing the source drain contact resistance and the manufacturing method of the MOSFET, due to the fact that the fractional condensation zone of doping cation is arranged on the interface of source-drain contact of the metal silicide and the source-drain zones, schottky potential barrier height can be effectively reduced, the source-drain contact resistance is greatly reduced, and property of components is further improved.

The invention provides a method for producing variant potential barrier gallium nitride field effect tube, which comprises the following steps: growing a nucleation layer, an AlGaN buffer layer and a GaN channel layer on a substrate; growing an AlN isolating layer and an AlGaN barrier layer; coating a thick GaN cap layer on the AlGaN barrier layer to increase the potential-barrier height; thinning the GaN cap layer except for the part below the grate by using chlorine-based inductively coupled plasma dry corrosion process to increase the electron gas density of the underside channel and weaken the strong field peak; performing photoetching corrosion and making a source electrode and a drain electrode on the corroded AlGaN barrier layer, to reduce the ohmic contact resistance by using the thin potential barrier and high electron gas density; and making variant potential barrier field effect tube. The invention has the advantages that the grid electrode can be formed directly on the GaN cap layer without channeling, thereby significantly reducing the gate current and improving the reliability; the fabrication of field plate electrode is omitted to simplify the process, reduce the parasitic capacitance, and increase the gain; and the invention facilitates the research of millimeter wave high-frequency apparatuses.

The invention provides a high-nonlinearity and low-leakage-current varistor and a preparation method thereof. The high-nonlinearity and low-leakage-current varistor comprises the following components:ZnO, Bi2O3, Co2O3, MnO2, Sb2O3, Cr2O3, NiO, SiO2 and Al2O3, and the molar ratio of the components is as follows: ZnO: Bi2O3: Co2O3: MnO2: Sb2O3: Cr2O3: NiO: SiO2: Al2O3= 1520-1540: 7-12: 15-17: 8-10:13-16: 4-6: 7-9: 23-25: 0.8-1.5. Further, the invention further provides a preparation method of the high-nonlinearity and low-leakage-current varistor. The sintering mechanism and the potential barrier height are affected through specific ratio of oxide raw materials, the firing temperature is reduced, the nonlinearity of the ZnO varistor is improved, the leakage current of the ZnO varistor is reduced, the performance is high, a preparation course is simple in process, the production cost is low, and large-scale production is facilitated.

A tunneling magnetic sensor includes a platinum layer between a pinned magnetic layer and an insulating barrier layer. The platinum layer can probably vary the barrier height (potential height) and barrier width (potential width) of the insulating barrier layer to reduce the absolute value of VCR, thus providing higher operating stability than known tunneling magnetic sensors. In addition, the insulating barrier layer can achieve increased flatness at its bottom interface (where the insulating barrier layer starts to be formed). The tunneling magnetic sensor can therefore provide a higher rate of resistance change (ΔR / R) at low RA than known tunneling magnetic sensors.

The invention discloses an electron extraction type freewheel diode device and a preparation method thereof, and relates to a power semiconductor device. More than one first structure for increasing the density of an electron extraction path is also arranged on an N-type drift region; the first structure comprises a lightly doped P-type base region, a heavily doped N-type emitter region, a P-type trench anode region and a trench region, the heavily doped N-type emitter region and the P-type trench anode region are arranged above the lightly doped P-type base region, the trench region is arranged on the P-type trench anode region, and the heavily doped N-type emitter region, the lightly doped P-type base region and the N-type drift region form a punch-through NPN triode structure; the N-type drift region, the P-type planar anode region and the P-type trench anode region form a JFET structure, the P-type planar anode region and the P-type trench anode region form Schottky contact with the anode electrode, and the heavily doped P-type ohmic contact region forms ohmic contact with the anode electrode; and the adjustment range of the potential barrier height of the punch-through NPN triode is wide, and the adjustment range of soft and fast reverse recovery can be increased.

The invention discloses a deep ultraviolet LED with a stepped electron blocking layer structure and a preparation method of the deep ultraviolet LED. The deep ultraviolet LED with the stepped electronblocking layer structure sequentially comprises a sapphire substrate, an AlN intrinsic layer, an n-type AlGaN electron injection layer, a quantum well active layer, a stepped electron blocking layer,a p-type AlGaN hole injection layer and a p-type GaN contact layer from bottom to top. The stepped electron blocking layer sequentially comprises a first AlGaN blocking layer, a GaN blocking layer and a second AlGaN blocking layer in the direction from the quantum well active layer to the p-type AlGaN hole injection layer, the Al component content percentage of the first AlGaN blocking layer is larger than the Al component content percentage of a potential barrier in the quantum well active layer, and the Al component content percentage of the second AlGaN barrier layer is greater than or equal to the Al component content percentage of the first AlGaN barrier layer. By introducing the stepped electron barrier layer structure, the equivalent barrier height of the electron barrier layer isincreased, and the electron overflow effect is relieved, so that the luminous efficiency of the deep ultraviolet LED is improved.

The invention discloses a method for carrying out image force compensation amendment on height of a schottky barrier, wherein the height of the schottky barrier is extracted by a J-V standard method. The method comprises the following steps: combing a GaN high electron mobility transistor device structure, deducing the function of one dollar of a non-interfacial layer or an interface layer, according to the law that forward voltage barrier height image force impacts the barrier height, determining the accumulative impact on the potential barrier, caused by the reduced amount of the equivalentbarrier to approximately replace a certain voltage range; and using an MATLAB programme to solve the zone of an unitary high function, wherein a recent value of the zone, which is larger than the barrier height value obtained by the standard J-V measurement, is the height value of modified schottky barrier. The invention compensates the reduction of height of the barrier, caused by image force, rationally obtains height of the thermal equilibrium state barrier, and modifies the height of the barrier from a new perspective.

The invention discloses a method for evaluating a schottky current transportation mode of a semiconductor device, and belongs to the technical field of methods for evaluating characteristic physical mechanisms of semiconductor devices. The method comprises the following steps of: acquiring logI-V relation curves of the device under different temperature conditions, fitting and analyzing slopes of the acquired logI-V relation curves, and comparing the slope values of the logI-V relation curves under different temperature conditions to evaluate the schottky current transportation mode of the semiconductor device. By the method for evaluating the schottky current transportation mode of the semiconductor device, a current transportation mechanism of the semiconductor device can be determined, so that a potential barrier height and a Richardson constant of the semiconductor device can be accurately acquired; and therefore, the physical mechanism of the semiconductor device can be deeply researched.

The invention discloses a deep ultraviolet LED with a component gradient quantum well structure and a preparation method of the deep ultraviolet LED. The deep ultraviolet LED with the component gradient quantum well structure sequentially comprises a sapphire substrate, an AlN intrinsic layer, an n-type AlGaN electron injection layer, a component gradient quantum well active layer, an electron blocking layer, a p-type AlGaN hole injection layer and a p-type GaN contact layer from bottom to top. The component gradient quantum well active layer comprises a plurality of potential well layers anda plurality of barrier layers which are sequentially and alternately arranged, and the Al component content percentage of the (m+1)-th barrier layer is larger than that of the m-th barrier layer alongthe direction from the n-type AlGaN electron injection layer to the electron blocking layer. According to the invention, in the process of growing the quantum well active layer, the plurality of barrier layers show a trend that the Al components are increased progressively, thereby improving the equivalent barrier height of the quantum well active layer, promoting the recombination of electrons and holes in the quantum well active layer, and improving the light-emitting efficiency of the deep ultraviolet LED.

The invention provides a germanium-silicon avalanche photoelectric detector. The germanium-silicon avalanche photoelectric detector comprises: an avalanche amplification region; a first ohmic contactlayer and a charge collection region which are respectively in contact with the avalanche amplification region; and a control gate structure which is connected with the charge collection region, wherein the control gate structure is used for controlling the barrier height of the charge collection region. That is to say, the germanium-silicon avalanche photoelectric detector is based on the controlgate structure, and the barrier height of the charge collection region is controlled by adjusting the gate voltage, so that only when the accumulation potential energy of a charge carrier in dark current is higher than a potential barrier, the charge carrier is allowed to pass, the dark current of the germanium-silicon avalanche photoelectric detector is further reduced, and the photoelectric conversion efficiency is improved.

On a semiconductor layer 1 consisting of a substrate of a semiconductor single crystal or the like, a metallic layer 2 of a thickness of 20 nm or less is formed. The metallic layer 2 comprises a first area A directly contacting with the semiconductor layer 1, and a second area B that is interposed by an intermediate layer 3 consisting of an insulator, a metal different from the metallic layer 2 or a semiconductor different from the semiconductor layer 1 between the semiconductor 1 and the metallic layer 2, and of a thickness of 10 nm or less. The first area and the second area are different in their Schottky currents, further in their Schottky barrier heights. Any one of the respective areas A and B has an area of nanometer level, and the respective interfaces in each of the areas A and B have an essentially uniform potential barrier, respectively. Such a film-like composite structure contributes to a minute semiconductor device of nanometer level and realization of a new functional device.

The invention provides a middle series connection layer and a production method thereof, and a laminated photovoltaic device and a preparation method thereof, and relates to the technical field of photovoltaics. The middle series connection layer comprises a potential barrier layer and quantum dot structures dispersed in the potential barrier layer. The quantum dot structure dispersed in the barrier layer depends on the quantum confinement effect, a controllable tunneling channel is established in the barrier layer, the controllable tunneling channel can assist carriers of corresponding energy levels in high-efficiency resonance tunneling, the tunneling efficiency of the corresponding carriers is improved, tunneling current is greatly improved, contact resistance is reduced, the reverse barrier heights of the two sides of the middle series connection layer are reduced, the reduction degree of the overall open-circuit voltage of the laminated photovoltaic device is further reduced, and the overall open-circuit voltage and efficiency of the laminated photovoltaic device are improved. Meanwhile, by means of a discrete energy level structure established in the barrier layer, the contact resistance is effectively controlled, so that the series resistance is relatively low.

The invention discloses a deep ultraviolet LED with a composition gradient quantum well structure and a preparation method thereof. The deep ultraviolet LED with a composition gradient quantum well structure sequentially comprises a sapphire substrate, an AlN intrinsic layer, an n-type AlGaN electron injection layer, composition graded quantum well active layer, electron blocking layer, p-type AlGaN hole injection layer and p-type GaN contact layer; composition graded quantum well active layer includes several potentials arranged alternately in sequence well layer and several barrier layers, and along the direction from the n-type AlGaN electron injection layer to the electron blocking layer, the Al composition percentage of the m+1 barrier layer is greater than the Al composition content of the m barrier layer percentage. In the process of growing the quantum well active layer, the present invention makes several potential barrier layers show a trend of increasing Al composition, thereby increasing the equivalent potential barrier height of the quantum well active layer, and promoting electrons and holes in the quantum well. The recombination of the active layer improves the luminous efficiency of the deep ultraviolet LED.

The invention discloses a metal-oxide -semiconductor field effect transistor (MOSFET) capable of effectively reducing source drain contact resistance and a manufacturing method of the MOSFET. The MOSFET capable of effectively reducing the source drain contact resistance and the manufacturing method of the MOSFET comprises substrates, a grid stacking structure at the bottom of the substrate, source-drain zones, grate side walls and metal silicide, wherein the source-drain zones are arranged in the substrates of the two sides of the grid stacking structure, the grating side walls are arranged on the substrates of the two sides of the grid stacking structure, and the metal silicide is placed in the source-drain zones of the two sides of the grating side walls. The MOSFET capable of effectively reducing the source drain contact resistance and the manufacturing method of the MOSFET is characterized in that a fractional condensation zone of doping cation is arranged on an interface of the metal silicide the source-drain zones. According to the MOSFET capable of effectively reducing the source drain contact resistance and the manufacturing method of the MOSFET, due to the fact that the fractional condensation zone of doping cation is arranged on the interface of source-drain contact of the metal silicide and the source-drain zones, schottky potential barrier height can be effectively reduced, the source-drain contact resistance is greatly reduced, and property of components is further improved.

The invention relates to a manufacture method for P-type ZnO ohim electrode, which comprises: depositing Ni on P-type ZnO with vacuum evaporation device to form the first layer of Ni electrode material; depositing Au to form the second Au layer of electrode material as electrode; taking rapid hot annealing to prepared electrode in nitrogen at low temperature to reduce potential barrier height between metal and semiconductor interface for the atom mutual diffusion and achieve ohim contact. This invention can improve greatly the ohim property and reliability of electrode.

The invention belongs to the technical field of a semiconductor and relates to a gate-ballast structure RF AlGaN / GaN HEMTs device and a preparation method thereof. The device includes a AlGaN / GaN substrate on SiC, a gate, a source and a drain, wherein the gate is a doped polysilicon, and square resistance is in a range of 20-40omega / sq. The doped polysilicon is taken as a gate, barrier potential height is high, a gate leakage is smaller compared with a conventional Ni / Au schottky gate, power consumption of a radio frequency power device is reduced, efficiency is improved, and the doped polysilicon has relatively low Rg and has the ballast resistor function. The device can be applied to a multi-finger gate device AlGaN / GaN HEMTs, through adjusting Lg length, the purpose of optimizing Wg length is achieved, heat radiation of the device is effectively improved, the device can be further applied to AlGaN / GaN HEMTs, and the polysilicon gate can be biased by wider Vgs swing.

The invention discloses an ultraviolet LED epitaxial sheet and its preparation method and application, wherein the ultraviolet LED epitaxial sheet includes an n-type semiconductor layer, an active layer, an electron blocking layer and a p-type semiconductor layer which are epitaxially grown in sequence; the electron blocking layer consists of a first The first sublayer and the second sublayer are alternately grown in a superlattice structure, the first sublayer is an aluminum boron nitride layer, and the second sublayer is an aluminum gallium nitride layer. The ultraviolet LED epitaxial wafer provided by the present invention uses alternately grown aluminum boron nitride layers and aluminum gallium nitride layers to form an electron blocking layer, so that the energy level position of the conduction band of the electron blocking layer is higher, and the effective barrier height of electrons is increased, effectively Block electrons from transitioning to the p-type semiconductor layer; at the same time, reduce the hole barrier height between the electron blocking layer and the active region, and significantly improve the injection efficiency of holes injected into the active layer; therefore, the radiative recombination rate of the active region can be increased, Thereby improving the luminous efficiency of the ultraviolet LED.

The invention discloses a barrier adjustment method for a silicon carbide Schottky diode. According to the method, a layer of Al2O3 film is inserted into a Ti / 4H-SiC Schottky diode, and therefore, interface non-uniformity can be improved, and the height of a barrier can be adjusted. The Al2O3 thin film layer with different thicknesses is grown on an atomic layer through deposition before metal Tiis sputtered, subsequently, Al2O3 reacts with silicon carbide, so that a dipole layer can be formed, potential difference between two sides of an interface is caused, and therefore, the height of a Schottky barrier is reduced, and the power consumption of the device is reduced; the Al2O3 film and the silicon carbide can generate a positive barrier, and therefore the reverse leakage current of theSchottky diode can be reduced; the thicknesses of the Al2O3 thin film layer can be differently adjusted, so that different barrier heights are generated, and therefore, the adjustability of the heightof the barrier is realized.

The invention discloses a Schottky diode for weak energy collection and a preparation method thereof. The Schottky diode comprises a substrate; a buffer layer disposed on the substrate; the component fixed doping layer is arranged on the buffer layer, the component fixed doping layer is formed by doping Sn in Ge, and the component of Sn is 8%; the component gradient doping layer is arranged on the component fixed doping layer, the component gradient doping layer is formed by doping Sn in Ge, and the component of Sn is gradually increased in the direction away from the component fixed doping layer; the metal anode is arranged on the component gradient doping layer; and the metal cathode is arranged on the component fixed doping layer. According to the invention, the series resistance of the device is reduced by doping Sn in the Ge semiconductor and adopting a component gradual change mode. And the contact part of the metal semiconductor has lower potential barrier height, so that the turn-on voltage of the device is reduced. Therefore, the rectification efficiency of the Schottky diode under weak energy density is improved on the whole.

The invention relates to a GaN-based lateral junction potential barrier Schottky diode and a preparation method thereof. The potential barrier Schottky diode comprises: a substrate layer, a nucleation layer, a buffer layer, an insertion layer, a potential A barrier layer and a passivation layer; a P injection region is arranged in the buffer layer, the insertion layer and the barrier layer, and is located at one end of the buffer layer, the insertion layer and the barrier layer, and the P injection region includes a number of P regions and a number of N regions, and The region between two adjacent P regions without P injection is the N region due to the existence of two-dimensional electron gas; the anode electrode is located on the upper surface of the P injection region; the cathode electrode is located on the upper surface of the barrier layer, and It is located at the end of the barrier layer away from the anode electrode. A local barrier Schottky diode and a method for making the same, by forming a comb-shaped lateral PN junction between the P injection region and the two-dimensional electron gas, effectively shielding the Schottky junction with a low barrier height and suppressing the Schottky barrier lowering effect And control the reverse leakage current, improve the breakdown voltage, while maintaining a low turn-on voltage.

The invention discloses a semiconductor structure and a forming method thereof, and the method comprises the steps: providing a substrate which comprises a first region and a second region which are adjacent to each other; a gate layer is formed on the substrate, a part of the gate layer is located on the first region, and the other part of the gate layer is further located on the second region; forming a first well region in the first region; forming a second well region in the second region, wherein the conduction type of the second well region is different from that of the first well region; a part of the gate layer is used as a mask, first doping ions are doped in the first well region to form a first doping region, the conduction type of the first doping region is the same as that of the first well region, a dopant in the first doping region is diffused to the second region to form a transverse diffusion gradient, and the first doping region and the second region form a second doping region; meanwhile, the potential barrier height of the source end is increased, the potential barrier lowering effect is effectively restrained, the threshold voltage of the device is improved, and meanwhile the performance such as the breakdown voltage of the device is improved.

The invention discloses a deep ultraviolet LED with a hole accumulation structure and a preparation method thereof. The deep ultraviolet LED with a hole accumulation structure is sequentially provided with a sapphire substrate, an AlN intrinsic layer, and an n-type AlGaN electron Injection layer, current spreading layer, quantum well active layer, hole storage layer, electron blocking layer, p-type AlGaN hole injection layer and p-type GaN contact layer; the hole storage layer is Mg-doped single-layer AlGaN structure, the growth temperature is 600-1000°C. The present invention increases the hole accumulation layer of single-layer structure between the quantum well active layer and the electron blocking layer, while increasing the equivalent potential barrier height of the electron blocking layer, and increasing the holes injected into the quantum well active region Concentration, and ultimately improve the luminous efficiency of deep ultraviolet LED devices.