15 results about "Potential barrier height" patented technology

The application discloses a self-rectifying ferroelectric memristor based on ferroelectric out-of-plane polarization and a preparation method thereof. The memristor is vertically structured from top to bottom as an upper electrode layer, a ferroelectric layer and a semiconductor layer. The ferroelectric layer is a ferroelectric semiconductor with out-of-plane ferroelectric polarization. The out-of-plane polarization direction of the ferroelectric layer is perpendicular to the upper electrode layer / ferroelectric layer interface and the ferroelectric layer / semiconductor layer interface at the same time. Two contact surfaces form an asymmetric potential barrier. The out-of-plane polarization state of the ferroelectric layer is changed by an external voltage, thereby changing the potential barrier height of the two contact surfaces and the carrier transport characteristics of the semiconductor layer, and further achieving the regulation function of the conductive state of the memristor. The on-current of the memristor is measured by a peripheral circuit as a storage value. The application realizes the switching of high resistance and low resistance and the rectification characteristic by using the change of the contact potential barrier of the ferroelectric layer and the silicon interface in the polarization reversal process. The memristor has simple structure, is easy to integrate and has low power consumption.

The application discloses a back contact cell and a preparation method and a photovoltaic module thereof, and relates to the technical field of solar cells. The back contact cell comprises a silicon substrate, a first doped layer and a second doped layer on the back surface of the silicon substrate, the first doped layer and the second doped layer are alternately arranged to form a third region with intervals, and a leakage channel structure comprising a first direction heavy doped region and a second direction light doped region is formed by laser induction; the potential barrier height of the first direction heavy doped region and the second doped layer is higher than the potential barrier height of the second direction light doped region and the second doped layer, and the potential barrier height of the second direction light doped region and the second doped layer is higher than the potential barrier height of the second direction light doped region and the undoped third region; a second metal electrode extends to the leakage channel structure and covers part of the first direction heavy doped region; the application also discloses a preparation method and a photovoltaic module comprising the cell. The application enhances the anti-hot spot capability and improves the photoelectric conversion efficiency through the gradient doped leakage channel and the electrode extension design, and the photovoltaic module also has excellent performance.

The invention discloses a method for precisely regulating and controlling the barrier height of a gallium nitride Schottky diode for microwave rectification based on the temperature of a substrate, and the method comprises the steps: preparing a Schottky anode of the gallium nitride Schottky diode through employing a magnetron sputtering method; the barrier height of the gallium nitride Schottky diode is regulated and controlled by continuously regulating and controlling the substrate temperature during magnetron sputtering, the temperature interval of substrate temperature regulation is 25-100 DEG C, and the barrier height can be continuously and accurately regulated within the range of 0.1-1.0 eV. On the basis of a Schottky diode without a Schottky anode, a magnetron sputtering method is selected to prepare Schottky metal, and the barrier height of the Schottky diode is regulated and controlled by adjusting the substrate temperature in the magnetron sputtering process, so that the rule that the barrier height of the Schottky diode is linearly increased along with the substrate temperature is disclosed; the potential barrier height and the turn-on voltage can be adjusted in a large range, and the adjustment precision of the turn-on voltage is as low as 0.01 V.

The utility model discloses a detection device, which comprises a detection unit and a processing unit, and is characterized in that the detection unit comprises a first electrode, a semiconductor nanowire array and a second electrode which are sequentially laminated; a first potential barrier height exists between the first electrode and the nanowire, a second potential barrier height exists between the second electrode and the nanowire, and the first potential barrier height is different from the second potential barrier height. Thus, when adsorption is carried out between the to-be-detected particles and the nanowires and the electronegativity of the to-be-detected particles and the nanowires is different, charge transfer occurs between the to-be-detected particles and the nanowires, and when the to-be-detected particles and the nanowires are desorbed, free charges generated by charge transfer occur in the nanowires. As the height of the first potential barrier is different from the height of the second potential barrier, a built-in electric field can be formed in the nanowire, so that free charges in the nanowire directionally move under the action of the built-in electric field, electric signals are output from the first electrode and the second electrode, and self-driving of the detection unit is realized.

The semiconductor laser chip sequentially comprises a substrate, an N-type semiconductor layer, a quantum well layer, a P-type semiconductor layer, a depletion region adjusting layer, an insulating layer and a P-surface electrode from bottom to top, and the depletion region adjusting layer is located between the P-type semiconductor layer and the insulating layer. According to the semiconductor laser chip, the depletion region adjusting layer is arranged to be a metal layer, the work function of the depletion region adjusting layer is smaller than that of the P-type semiconductor layer, the connecting region of the depletion region adjusting layer and the P-type semiconductor layer is a Schottky contact region, and a Schottky contact voltage adjusting mechanism is used for adjusting the voltage of the P-type semiconductor layer. When voltage is applied to the depletion region adjusting layer to act on the contact interface, the barrier height is increased, the range of the depletion region is enlarged, the active boundary of a hole and the boundary of the contact interface can be pulled open, hole overflow is better limited, the leakage current of the laser is reduced, the threshold current of the laser is further reduced, and the luminous efficiency of the laser is improved.

The present invention discloses a photoelectric chip structure with high internal quantum efficiency and a design method thereof, which relates to the field of semiconductor chip design technology. In this solution, a first replacement layer is inserted into part or all of the quantum barrier layers, and a second replacement layer is inserted into the electron blocking layer while the thickness of the quantum barrier layer and the electron blocking layer remain constant. This increases the quantum barrier band potential barrier height while reducing the effective hole potential barrier height, greatly improving the radiation recombination efficiency of the active region, and thus effectively improving the internal quantum efficiency and luminous efficiency of the AlGaN deep purple photoelectric chip structure. The solution also adjusts dynamic parameters according to unit adjustment amounts in a parameter combination model to combine multiple dynamic parameter group sets, and only simulates and calculates the dynamic parameter group sets to determine the optimal dynamic parameter group, thereby obtaining a photoelectric chip structure with high internal quantum efficiency. This avoids the simulation and calculation of a large number of parameters, and improves the production efficiency of the photoelectric chip structure with high internal quantum efficiency.

The invention discloses a preparation method and application of Sr / Co co-doped CCTO giant dielectric ceramic, belongs to the technical field of ceramic preparation, solves the problem that the dielectric constant and dielectric loss of CCTO are simultaneously increased or reduced when CCTO is subjected to single-doping modification in the prior art, and comprises the following steps: carrying out primary ball milling treatment on a powder raw material, and drying after ball milling treatment is finished, so that the Sr / Co co-doped CCTO giant dielectric ceramic is obtained. Pre-sintering the precursor powder, carrying out secondary ball milling treatment on the pre-sintered powder, drying the pre-sintered powder subjected to secondary ball milling treatment to obtain ceramic powder, carrying out tabletting molding on the ceramic powder, and sintering a green body to obtain the Sr / Co co-doped CCTO giant dielectric ceramic material. According to the invention, Sr < 2 + > ions are used for carrying out substitution doping on Ca < 2 + > ion sites, so that the grain boundary resistance and the Schottky barrier height can be effectively increased, the dielectric relaxation characteristic can be enhanced, Co < 2 + > ions are used for carrying out substitution doping on Cu < 2 + > ion sites, and CaTiO3 and Co2TiO4 phases can be formed at the grain boundary, so that the grain boundary resistivity and the dielectric loss are reduced, and the dielectric relaxation performance is improved. The effect of effectively regulating and controlling the dielectric property of the ceramic is achieved.

The application discloses AuPtPdNi-based bimodal heterojunction high-entropy alloy electric contact material and a preparation method thereof, and belongs to the technical field of electric contact materials.The AuPtPdNi-based bimodal heterojunction high-entropy alloy electric contact material comprises Au, Pt, Pd and Ni in equal atomic proportions.A bimodal distribution of grains is introduced into the heterostructure through cold rolling and double-stage aging treatment, and a multistage organizational structure of soft and hard alternation is formed in the material, so that the ductility is significantly improved while the hardness of the material is maintained.In addition, the combination of cold rolling and double-stage aging treatment and the design of the multi-principal element alloy composition form phase interfaces with different energy band structures in the matrix, the built-in electric field generated at the hetero-interface can effectively reduce the carrier scattering probability, reduce the grain boundary barrier height and reduce the resistivity.Meanwhile, the coherent or incoherent interface in the heterostructure can be used as a fast transmission channel for carriers, so that the carrier mobility is improved, and the material still maintains excellent conductivity stability under high-frequency and large-current working conditions.

The invention relates to a microwave oscillator and a preparation method and a driving method thereof. The microwave oscillator comprises a substrate, a heavy metal layer, a free layer, an insulating layer, a fixed layer and a first electrode, the heavy metal layer is located on the substrate, and the free layer is located on the side, away from the substrate, of the heavy metal layer. The barrier structure of the free layer comprises an edge part, an annular concave part and a middle convex part. The potential barrier height of the edge part and the potential barrier height of the middle protruding part are larger than the potential barrier height of the annular concave part. The free layer comprises a magnetic Hopv quantum, and the magnetic Hopv quantum is located in the annular recessed part. The insulating layer is located on one side of the free layer away from the substrate, the fixed layer is located on one side of the insulating layer away from the substrate, and the first electrode is located on one side of the fixed layer away from the substrate. According to the technical scheme, the robustness and reliability of the microwave oscillator in a complex working environment can be remarkably enhanced, and the microwave oscillator can output a high-frequency microwave signal.

The present invention discloses a method for evaluating the uneven aging state of a transformer in combination with AC conductivity, belonging to the technical field of oil-paper insulation life assessment. The method, in combination with AC conductivity, directly reflects the change in the height of the potential barrier that needs to be overcome during ion transitions in the medium. By constructing a database showing the AC conductivity of insulating paperboards with different degrees of polymerization varying with frequency, as well as a database showing the AC conductivity of oil varying with frequency and an oil viscosity database, the amount of information on insulation medium degradation is enriched, and the uneven aging state of the transformer can be more accurately assessed. The main insulation structure of the transformer is gridded, and an expression for the overall AC conductivity of the main insulation structure of the transformer is obtained by utilizing the relationship between resistance and conductivity, thereby achieving a more realistic physical model construction of the transformer, effectively characterizing the relationship between its local structure and overall structure, and thereby quantitatively analyzing the uneven aging state.

The application provides a light emitting diode epitaxial wafer and a preparation method thereof. The light emitting diode epitaxial wafer comprises a composite electron blocking layer, the composite electron blocking layer is a superlattice structure, and the composite electron blocking layer comprises M first sublayers and second sublayers which are alternately stacked periodically; the first sublayer is a p-type doped Er a Al b Ga 1‑a‑b N layer, and the second sublayer is a p-type doped GaN layer. By converting the existing p-type AlGaN / GaN superlattice electron blocking layer into a p-type doped Er a Al b Ga 1‑a‑b N layer and a p-type doped GaN layer which are alternately stacked periodically, lattice matching on a heterojunction interface can be realized, interface stress can be eliminated, Er a Al b Ga 1‑a‑b N potential barrier height can be prevented from being reduced, a good electron blocking capability can be maintained, and the photoelectric efficiency of an LED can be effectively improved.

This invention relates to the field of insulation condition monitoring and weak signal processing technology for power equipment, specifically a high-precision weak current discharge detection method based on electrical sensors. The method includes: constructing an input driving sequence; using the input driving sequence as the driving force to drive a nonlinear bistable potential trap system to generate a system response trajectory; dynamically adjusting the potential barrier height parameter of the nonlinear bistable potential trap system until the resonance coordination index meets the preset stochastic resonance optimization conditions, obtaining the output waveform after resonance enhancement; extracting time-domain pulse features and frequency-domain energy features from the resonance-enhanced output waveform, and generating discharge detection results based on these features to output the insulation condition assessment and discharge type identification results of the circuit under test. This invention effectively solves the problem of unclear weak signal features under strong noise, significantly improving the accuracy of insulation condition assessment.

The invention discloses nonlinear conductive silicone rubber based on multi-oxide sintered body doping and a preparation method and application thereof, and belongs to the technical field of cable accessory materials. The invention discloses nonlinear conductive silicone rubber based on multi-oxide sintered body doping. The nonlinear conductive silicone rubber is metal oxide modified silicone rubber; the metal oxide comprises ZnO, Bi2O3, MnO2, Co2O3 and Cr2O3, and the metal oxide comprises ZnO, Bi2O3, MnO2, Co2O3 and Cr2O3; the silicon rubber is silicon rubber grafted with cinnamyl nitrile. According to the invention, Bi2O3 is used as a resistance changing agent to form a thin layer at a ZnO crystal boundary, so that the insulating property of the crystal boundary can be enhanced, the occurrence of breakdown voltage is reduced, and the voltage resistance of the material is improved; the MnO2 is doped into the silicon rubber, so that the potential barrier height can be increased at the ZnO crystal boundary, more charge transfer barriers are introduced at the crystal boundary of the material, the conductivity of the material is reduced, and the electrical insulating property of the silicon rubber is improved. The invention relates to application of nonlinear conductive silicone rubber based on multi-oxide sintered body doping in the field of power transmission and power distribution.

The invention discloses a detection device, which comprises a detection unit and a processing unit, and is characterized in that the detection unit comprises a first electrode, a semiconductor nanowire array and a second electrode which are sequentially laminated; a first potential barrier height exists between the first electrode and the nanowire, a second potential barrier height exists between the second electrode and the nanowire, and the first potential barrier height is different from the second potential barrier height. Thus, when adsorption is carried out between the to-be-detected particles and the nanowires and the electronegativity of the to-be-detected particles and the nanowires is different, charge transfer occurs between the to-be-detected particles and the nanowires, and when the to-be-detected particles and the nanowires are desorbed, free charges generated by charge transfer occur in the nanowires. As the height of the first potential barrier is different from the height of the second potential barrier, a built-in electric field can be formed in the nanowire, so that free charges in the nanowire directionally move under the action of the built-in electric field, electric signals are output from the first electrode and the second electrode, and self-driving of the detection unit is realized.

The invention provides a resonant tunneling photodiode, and relates to the technical field of infrared photoelectric devices. The resonant tunneling photodiode includes: a substrate; the material layer is located above the substrate, the material layer comprises an absorption region and a gain region and is used for regulating and controlling the signal gain of the infrared signal, and the gain region comprises a lower potential barrier layer; the potential well layer is positioned above the lower potential barrier layer; the upper potential barrier layer is located above the potential well layer, and the upper potential barrier layer and the lower potential barrier layer are of an asymmetric structure or are different in material design. According to the invention, the asymmetric double-barrier resonant tunneling structure is introduced, and the lower barrier layer close to the absorption region side is made of a material with a higher barrier height or a larger barrier thickness, so that compared with an existing symmetric barrier structure, the differential conductance of the device and the lifetime of accumulated minority carriers are optimized at the same time, and the responsivity is enhanced.