32 results about "Potential barrier height" patented technology

The invention relates to an LED structure comprising quantum barriers with gradient potential barrier heights and a method for manufacturing the LED structure, and belongs to the technical field of photoelectrons. The LED structure is provided with a plurality of quantum well layers, and the potential barrier heights of the quantum barriers are gradually reduced from an n side to a p side. Conveyance of electron holes is improved owing to the novel structure, so that the electron holes can be distributed in large quantities of quantum wells, and the intensity of polarization among the potential barriers is reduced in general. Owing to the factors, the distribution of the concentration of electrons and the distribution of the concentration of the electron holes are improved totally, the rate and the intensity of spontaneous radiation are increased totally, and accordingly, the internal quantum efficiency of a device is effectively enhanced, and outputted optical power of the device is effectively increased.

The invention discloses a resistive random access memory unit and a resistive random access memorizer. The memory unit comprises an upper electrode, a resistive functional layer, an intermediate electrode, an asymmetric tunneling potential barrier layer and a lower electrode, wherein the upper electrode, the resistive functional layer and the intermediate electrode are formed into a resistive memory part; the intermediate electrode, the asymmetric tunneling potential barrier layer and the lower electrode are formed into a strobe functional part; the resistive memory part and the strobe functional part share the intermediate electrode, and the strobe functional part can be placed on or beneath the resistive memory part; the asymmetric tunneling potential barrier layer is prepared from at least two materials different in potential barrier height, and the positive and negative tunneling currents passing through the resistive random access memory unit can be rectified and modulated in this way. According to the resistive random access memory unit and the memorizer disclosed by the invention, the asymmetric tunneling potential barrier layer is introduced to perform rectification so as to achieve strobe operation of a resistance unit. Meanwhile, the asymmetric tunneling potential barrier layer is free from doping or high-temperature annealing and is thin in thickness, so that the asymmetric tunneling potential barrier layer is beneficial for achieving three-dimensional high-density integration of the resistive random access memorizer.

The invention discloses a metal-oxide -semiconductor field effect transistor (MOSFET) capable of effectively reducing source drain contact resistance and a manufacturing method of the MOSFET. The MOSFET capable of effectively reducing the source drain contact resistance and the manufacturing method of the MOSFET comprises substrates, a grid stacking structure at the bottom of the substrate, source-drain zones, grate side walls and metal silicide, wherein the source-drain zones are arranged in the substrates of the two sides of the grid stacking structure, the grating side walls are arranged on the substrates of the two sides of the grid stacking structure, and the metal silicide is placed in the source-drain zones of the two sides of the grating side walls. The MOSFET capable of effectively reducing the source drain contact resistance and the manufacturing method of the MOSFET is characterized in that a fractional condensation zone of doping cation is arranged on an interface of the metal silicide the source-drain zones. According to the MOSFET capable of effectively reducing the source drain contact resistance and the manufacturing method of the MOSFET, due to the fact that the fractional condensation zone of doping cation is arranged on the interface of source-drain contact of the metal silicide and the source-drain zones, schottky potential barrier height can be effectively reduced, the source-drain contact resistance is greatly reduced, and property of components is further improved.

The invention discloses a deep ultraviolet LED with a stepped electron blocking layer structure and a preparation method of the deep ultraviolet LED. The deep ultraviolet LED with the stepped electronblocking layer structure sequentially comprises a sapphire substrate, an AlN intrinsic layer, an n-type AlGaN electron injection layer, a quantum well active layer, a stepped electron blocking layer,a p-type AlGaN hole injection layer and a p-type GaN contact layer from bottom to top. The stepped electron blocking layer sequentially comprises a first AlGaN blocking layer, a GaN blocking layer and a second AlGaN blocking layer in the direction from the quantum well active layer to the p-type AlGaN hole injection layer, the Al component content percentage of the first AlGaN blocking layer is larger than the Al component content percentage of a potential barrier in the quantum well active layer, and the Al component content percentage of the second AlGaN barrier layer is greater than or equal to the Al component content percentage of the first AlGaN barrier layer. By introducing the stepped electron barrier layer structure, the equivalent barrier height of the electron barrier layer isincreased, and the electron overflow effect is relieved, so that the luminous efficiency of the deep ultraviolet LED is improved.

The invention discloses a method for evaluating a schottky current transportation mode of a semiconductor device, and belongs to the technical field of methods for evaluating characteristic physical mechanisms of semiconductor devices. The method comprises the following steps of: acquiring logI-V relation curves of the device under different temperature conditions, fitting and analyzing slopes of the acquired logI-V relation curves, and comparing the slope values of the logI-V relation curves under different temperature conditions to evaluate the schottky current transportation mode of the semiconductor device. By the method for evaluating the schottky current transportation mode of the semiconductor device, a current transportation mechanism of the semiconductor device can be determined, so that a potential barrier height and a Richardson constant of the semiconductor device can be accurately acquired; and therefore, the physical mechanism of the semiconductor device can be deeply researched.

The invention relates to a manufacture method for P-type ZnO ohim electrode, which comprises: depositing Ni on P-type ZnO with vacuum evaporation device to form the first layer of Ni electrode material; depositing Au to form the second Au layer of electrode material as electrode; taking rapid hot annealing to prepared electrode in nitrogen at low temperature to reduce potential barrier height between metal and semiconductor interface for the atom mutual diffusion and achieve ohim contact. This invention can improve greatly the ohim property and reliability of electrode.

The invention provides a germanium-silicon avalanche photoelectric detector. The germanium-silicon avalanche photoelectric detector comprises: an avalanche amplification region; a first ohmic contactlayer and a charge collection region which are respectively in contact with the avalanche amplification region; and a control gate structure which is connected with the charge collection region, wherein the control gate structure is used for controlling the barrier height of the charge collection region. That is to say, the germanium-silicon avalanche photoelectric detector is based on the controlgate structure, and the barrier height of the charge collection region is controlled by adjusting the gate voltage, so that only when the accumulation potential energy of a charge carrier in dark current is higher than a potential barrier, the charge carrier is allowed to pass, the dark current of the germanium-silicon avalanche photoelectric detector is further reduced, and the photoelectric conversion efficiency is improved.

The invention discloses a barrier adjustment method for a silicon carbide Schottky diode. According to the method, a layer of Al2O3 film is inserted into a Ti/4H-SiC Schottky diode, and therefore, interface non-uniformity can be improved, and the height of a barrier can be adjusted. The Al2O3 thin film layer with different thicknesses is grown on an atomic layer through deposition before metal Tiis sputtered, subsequently, Al2O3 reacts with silicon carbide, so that a dipole layer can be formed, potential difference between two sides of an interface is caused, and therefore, the height of a Schottky barrier is reduced, and the power consumption of the device is reduced; the Al2O3 film and the silicon carbide can generate a positive barrier, and therefore the reverse leakage current of theSchottky diode can be reduced; the thicknesses of the Al2O3 thin film layer can be differently adjusted, so that different barrier heights are generated, and therefore, the adjustability of the heightof the barrier is realized.

The invention discloses a Schottky diode for weak energy collection and a preparation method thereof. The Schottky diode comprises a substrate; a buffer layer disposed on the substrate; the component fixed doping layer is arranged on the buffer layer, the component fixed doping layer is formed by doping Sn in Ge, and the component of Sn is 8%; the component gradient doping layer is arranged on the component fixed doping layer, the component gradient doping layer is formed by doping Sn in Ge, and the component of Sn is gradually increased in the direction away from the component fixed doping layer; the metal anode is arranged on the component gradient doping layer; and the metal cathode is arranged on the component fixed doping layer. According to the invention, the series resistance of the device is reduced by doping Sn in the Ge semiconductor and adopting a component gradual change mode. And the contact part of the metal semiconductor has lower potential barrier height, so that the turn-on voltage of the device is reduced. Therefore, the rectification efficiency of the Schottky diode under weak energy density is improved on the whole.