8 results about "Potential barrier height" patented technology

The invention discloses a method for precisely regulating and controlling the barrier height of a gallium nitride Schottky diode for microwave rectification based on the temperature of a substrate, and the method comprises the steps: preparing a Schottky anode of the gallium nitride Schottky diode through employing a magnetron sputtering method; the barrier height of the gallium nitride Schottky diode is regulated and controlled by continuously regulating and controlling the substrate temperature during magnetron sputtering, the temperature interval of substrate temperature regulation is 25-100 DEG C, and the barrier height can be continuously and accurately regulated within the range of 0.1-1.0 eV. On the basis of a Schottky diode without a Schottky anode, a magnetron sputtering method is selected to prepare Schottky metal, and the barrier height of the Schottky diode is regulated and controlled by adjusting the substrate temperature in the magnetron sputtering process, so that the rule that the barrier height of the Schottky diode is linearly increased along with the substrate temperature is disclosed; the potential barrier height and the turn-on voltage can be adjusted in a large range, and the adjustment precision of the turn-on voltage is as low as 0.01 V.

The semiconductor laser chip sequentially comprises a substrate, an N-type semiconductor layer, a quantum well layer, a P-type semiconductor layer, a depletion region adjusting layer, an insulating layer and a P-surface electrode from bottom to top, and the depletion region adjusting layer is located between the P-type semiconductor layer and the insulating layer. According to the semiconductor laser chip, the depletion region adjusting layer is arranged to be a metal layer, the work function of the depletion region adjusting layer is smaller than that of the P-type semiconductor layer, the connecting region of the depletion region adjusting layer and the P-type semiconductor layer is a Schottky contact region, and a Schottky contact voltage adjusting mechanism is used for adjusting the voltage of the P-type semiconductor layer. When voltage is applied to the depletion region adjusting layer to act on the contact interface, the barrier height is increased, the range of the depletion region is enlarged, the active boundary of a hole and the boundary of the contact interface can be pulled open, hole overflow is better limited, the leakage current of the laser is reduced, the threshold current of the laser is further reduced, and the luminous efficiency of the laser is improved.

The application discloses AuPtPdNi-based bimodal heterojunction high-entropy alloy electric contact material and a preparation method thereof, and belongs to the technical field of electric contact materials.The AuPtPdNi-based bimodal heterojunction high-entropy alloy electric contact material comprises Au, Pt, Pd and Ni in equal atomic proportions.A bimodal distribution of grains is introduced into the heterostructure through cold rolling and double-stage aging treatment, and a multistage organizational structure of soft and hard alternation is formed in the material, so that the ductility is significantly improved while the hardness of the material is maintained.In addition, the combination of cold rolling and double-stage aging treatment and the design of the multi-principal element alloy composition form phase interfaces with different energy band structures in the matrix, the built-in electric field generated at the hetero-interface can effectively reduce the carrier scattering probability, reduce the grain boundary barrier height and reduce the resistivity.Meanwhile, the coherent or incoherent interface in the heterostructure can be used as a fast transmission channel for carriers, so that the carrier mobility is improved, and the material still maintains excellent conductivity stability under high-frequency and large-current working conditions.

The invention relates to a microwave oscillator and a preparation method and a driving method thereof. The microwave oscillator comprises a substrate, a heavy metal layer, a free layer, an insulating layer, a fixed layer and a first electrode, the heavy metal layer is located on the substrate, and the free layer is located on the side, away from the substrate, of the heavy metal layer. The barrier structure of the free layer comprises an edge part, an annular concave part and a middle convex part. The potential barrier height of the edge part and the potential barrier height of the middle protruding part are larger than the potential barrier height of the annular concave part. The free layer comprises a magnetic Hopv quantum, and the magnetic Hopv quantum is located in the annular recessed part. The insulating layer is located on one side of the free layer away from the substrate, the fixed layer is located on one side of the insulating layer away from the substrate, and the first electrode is located on one side of the fixed layer away from the substrate. According to the technical scheme, the robustness and reliability of the microwave oscillator in a complex working environment can be remarkably enhanced, and the microwave oscillator can output a high-frequency microwave signal.

This invention relates to the field of insulation condition monitoring and weak signal processing technology for power equipment, specifically a high-precision weak current discharge detection method based on electrical sensors. The method includes: constructing an input driving sequence; using the input driving sequence as the driving force to drive a nonlinear bistable potential trap system to generate a system response trajectory; dynamically adjusting the potential barrier height parameter of the nonlinear bistable potential trap system until the resonance coordination index meets the preset stochastic resonance optimization conditions, obtaining the output waveform after resonance enhancement; extracting time-domain pulse features and frequency-domain energy features from the resonance-enhanced output waveform, and generating discharge detection results based on these features to output the insulation condition assessment and discharge type identification results of the circuit under test. This invention effectively solves the problem of unclear weak signal features under strong noise, significantly improving the accuracy of insulation condition assessment.

The invention discloses nonlinear conductive silicone rubber based on multi-oxide sintered body doping and a preparation method and application thereof, and belongs to the technical field of cable accessory materials. The invention discloses nonlinear conductive silicone rubber based on multi-oxide sintered body doping. The nonlinear conductive silicone rubber is metal oxide modified silicone rubber; the metal oxide comprises ZnO, Bi2O3, MnO2, Co2O3 and Cr2O3, and the metal oxide comprises ZnO, Bi2O3, MnO2, Co2O3 and Cr2O3; the silicon rubber is silicon rubber grafted with cinnamyl nitrile. According to the invention, Bi2O3 is used as a resistance changing agent to form a thin layer at a ZnO crystal boundary, so that the insulating property of the crystal boundary can be enhanced, the occurrence of breakdown voltage is reduced, and the voltage resistance of the material is improved; the MnO2 is doped into the silicon rubber, so that the potential barrier height can be increased at the ZnO crystal boundary, more charge transfer barriers are introduced at the crystal boundary of the material, the conductivity of the material is reduced, and the electrical insulating property of the silicon rubber is improved. The invention relates to application of nonlinear conductive silicone rubber based on multi-oxide sintered body doping in the field of power transmission and power distribution.

The invention discloses a detection device, which comprises a detection unit and a processing unit, and is characterized in that the detection unit comprises a first electrode, a semiconductor nanowire array and a second electrode which are sequentially laminated; a first potential barrier height exists between the first electrode and the nanowire, a second potential barrier height exists between the second electrode and the nanowire, and the first potential barrier height is different from the second potential barrier height. Thus, when adsorption is carried out between the to-be-detected particles and the nanowires and the electronegativity of the to-be-detected particles and the nanowires is different, charge transfer occurs between the to-be-detected particles and the nanowires, and when the to-be-detected particles and the nanowires are desorbed, free charges generated by charge transfer occur in the nanowires. As the height of the first potential barrier is different from the height of the second potential barrier, a built-in electric field can be formed in the nanowire, so that free charges in the nanowire directionally move under the action of the built-in electric field, electric signals are output from the first electrode and the second electrode, and self-driving of the detection unit is realized.

The invention provides a resonant tunneling photodiode, and relates to the technical field of infrared photoelectric devices. The resonant tunneling photodiode includes: a substrate; the material layer is located above the substrate, the material layer comprises an absorption region and a gain region and is used for regulating and controlling the signal gain of the infrared signal, and the gain region comprises a lower potential barrier layer; the potential well layer is positioned above the lower potential barrier layer; the upper potential barrier layer is located above the potential well layer, and the upper potential barrier layer and the lower potential barrier layer are of an asymmetric structure or are different in material design. According to the invention, the asymmetric double-barrier resonant tunneling structure is introduced, and the lower barrier layer close to the absorption region side is made of a material with a higher barrier height or a larger barrier thickness, so that compared with an existing symmetric barrier structure, the differential conductance of the device and the lifetime of accumulated minority carriers are optimized at the same time, and the responsivity is enhanced.