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Schottky diode for weak energy collection and preparation method thereof

A Schottky diode and energy harvesting technology, which is applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve the problems of difficult commercial use and low rectification efficiency, and achieve low cost, high rectification efficiency, and reduced series resistance Effect

Pending Publication Date: 2022-05-10
XIDIAN UNIV
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The embodiment of the present invention provides a Schottky diode for weak energy collection and its preparation method, which is used to solve the problem that the Schottky diode in the prior art has low rectification efficiency under weak energy density and is difficult to apply to commercial use

Method used

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  • Schottky diode for weak energy collection and preparation method thereof
  • Schottky diode for weak energy collection and preparation method thereof
  • Schottky diode for weak energy collection and preparation method thereof

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Embodiment Construction

[0030] The following will clearly and completely describe the technical solutions in the embodiments of the present invention with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only some, not all, embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.

[0031] figure 1 A schematic structural diagram of a Schottky diode for weak energy harvesting provided by an embodiment of the present invention. An embodiment of the present invention provides a Schottky diode for weak energy collection, including:

[0032] Substrate 101;

[0033] a buffer layer, disposed on the substrate 101;

[0034] A composition-fixed doped layer 104 is disposed on the buffer layer, and the composition-fixed doped layer 104 is formed b...

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Abstract

The invention discloses a Schottky diode for weak energy collection and a preparation method thereof. The Schottky diode comprises a substrate; a buffer layer disposed on the substrate; the component fixed doping layer is arranged on the buffer layer, the component fixed doping layer is formed by doping Sn in Ge, and the component of Sn is 8%; the component gradient doping layer is arranged on the component fixed doping layer, the component gradient doping layer is formed by doping Sn in Ge, and the component of Sn is gradually increased in the direction away from the component fixed doping layer; the metal anode is arranged on the component gradient doping layer; and the metal cathode is arranged on the component fixed doping layer. According to the invention, the series resistance of the device is reduced by doping Sn in the Ge semiconductor and adopting a component gradual change mode. And the contact part of the metal semiconductor has lower potential barrier height, so that the turn-on voltage of the device is reduced. Therefore, the rectification efficiency of the Schottky diode under weak energy density is improved on the whole.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a Schottky diode for weak energy collection and a preparation method thereof. Background technique [0002] In recent years, wireless power transfer system (MWPT) technology has become the focus of widespread attention in the fields of smart home, medical care and environmental monitoring. This technology is a new type of energy transmission technology that is not limited by natural conditions and has excellent performance. It can break through the limitation of transmission lines and transmit electric energy in space. It can effectively complete the transmission of microwave energy to DC energy. [0003] Schottky diodes have the advantages of no minority carrier storage effect, short reverse recovery time, fast switching speed, low junction capacitance, and the barrier height is usually smaller than the PN junction barrier, so they are often used in high-frequency band ap...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/872H01L29/167H01L29/47H01L21/329
CPCH01L29/872H01L29/167H01L29/47H01L29/66143
Inventor 宋建军张哲戴显英李家豪
Owner XIDIAN UNIV
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