Method for evaluating schottky current transportation mode of semiconductor device

A semiconductor and device technology, applied in the field of evaluation of the physical mechanism of semiconductor device characteristics

Inactive Publication Date: 2012-11-07
INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

If the barrier is not thin, but there are many defects in the depletion region, defect-assisted tunneling becomes the dominant transport mechanism

Method used

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  • Method for evaluating schottky current transportation mode of semiconductor device
  • Method for evaluating schottky current transportation mode of semiconductor device
  • Method for evaluating schottky current transportation mode of semiconductor device

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Embodiment Construction

[0022] In order to understand the present invention in depth, the present invention will be described in detail below in conjunction with specific examples.

[0023] The method for evaluating the Schottky current transport mode of a semiconductor device provided by the present invention comprises the following steps:

[0024] In this embodiment, the method for evaluating the Schottky current transport mode of a GaN-based HEMT device is taken as an example to illustrate the technical solution of the present invention as follows:

[0025] Step 1: Select the temperature range, divide the temperature range into temperature gradients by arithmetic sequence, and collect the I—V data of Schottky characteristics of semiconductor devices on each temperature gradient; the temperature gradients selected in this embodiment are respectively -50 ° C, - 25°C, 0°C, 25°C, 50°C, 75°C, 100°C, 125°C, with an accuracy of 0.1°C.

[0026] Among them, when collecting the I-V data of the Schottky cha...

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Abstract

The invention discloses a method for evaluating a schottky current transportation mode of a semiconductor device, and belongs to the technical field of methods for evaluating characteristic physical mechanisms of semiconductor devices. The method comprises the following steps of: acquiring logI-V relation curves of the device under different temperature conditions, fitting and analyzing slopes of the acquired logI-V relation curves, and comparing the slope values of the logI-V relation curves under different temperature conditions to evaluate the schottky current transportation mode of the semiconductor device. By the method for evaluating the schottky current transportation mode of the semiconductor device, a current transportation mechanism of the semiconductor device can be determined, so that a potential barrier height and a Richardson constant of the semiconductor device can be accurately acquired; and therefore, the physical mechanism of the semiconductor device can be deeply researched.

Description

technical field [0001] The invention relates to the technical field of evaluation methods for physical mechanisms of semiconductor device characteristics, in particular to a method for evaluating Schottky current transport modes of semiconductor devices. Background technique [0002] The transport mode of the Schottky current directly affects the evaluation of the Schottky characteristics of the device, and also directly affects the accuracy of extracting the Schottky barrier height of the device and obtaining the Richardson parameter. There are many transport mechanisms for Schottky current, one of which is the thermionic emission mechanism. As long as the electrons in the conduction band have enough thermal energy to move over the potential barrier, they can contribute to the current. , which is the so-called thermionic emission mechanism. However, if the barrier is thin enough, even if the energy of the electron is below the barrier height, it can tunnel across the barri...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G06F17/50
Inventor 赵妙刘新宇郑英奎彭铭曾欧阳思华李艳奎
Owner INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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