A kind of gan-based lateral junction barrier Schottky diode and preparation method thereof

Abstract

The invention relates to a GaN-based lateral junction potential barrier Schottky diode and a preparation method thereof. The potential barrier Schottky diode comprises: a substrate layer, a nucleation layer, a buffer layer, an insertion layer, a potential A barrier layer and a passivation layer; a P injection region is arranged in the buffer layer, the insertion layer and the barrier layer, and is located at one end of the buffer layer, the insertion layer and the barrier layer, and the P injection region includes a number of P regions and a number of N regions, and The region between two adjacent P regions without P injection is the N region due to the existence of two-dimensional electron gas; the anode electrode is located on the upper surface of the P injection region; the cathode electrode is located on the upper surface of the barrier layer, and It is located at the end of the barrier layer away from the anode electrode. A local barrier Schottky diode and a method for making the same, by forming a comb-shaped lateral PN junction between the P injection region and the two-dimensional electron gas, effectively shielding the Schottky junction with a low barrier height and suppressing the Schottky barrier lowering effect And control the reverse leakage current, improve the breakdown voltage, while maintaining a low turn-on voltage.

Description

technical field [0001] The invention belongs to the technical field of semiconductor devices, in particular to a GaN-based lateral junction barrier Schottky diode and a preparation method thereof. Background technique [0002] The Si-based JBS diode structure was proposed by Baliga in 1984. JBS diodes contain P-wells implanted in the n-drift region, which are located under Schottky contacts to form an interconnected network. Under reverse bias conditions, the PN junctions formed by these P wells and n-drift regions will pinch off the leakage current between P wells, suppress reverse leakage current, and effectively shield Schottky junctions with low barrier heights; under forward bias conditions However, these P wells do not participate in conduction because the Schottky metal does not form an ohmic contact with the implanted P region, so the forward voltage drop is determined by the Schottky barrier. In recent years, Schottky Barrier Diode (SBD, Schottky Barrier Diode) has...

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Problems solved by technology

GaN-based vertical junction barrier Schottky diodes have been reported and studied, but compared with SiC heterojunctions, the advantages of GaN cannot be reflected in the vertical structure, and the dislocation problem of GaN materials makes the vertical structure leakage larger , the structural advantages of the junction barrier Schottky diode cannot be fully utilized, and the GaN vertical structure is more difficult to process than the lateral structure

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