Germanium-silicon avalanche photoelectric detector

Abstract

The invention provides a germanium-silicon avalanche photoelectric detector. The germanium-silicon avalanche photoelectric detector comprises: an avalanche amplification region; a first ohmic contactlayer and a charge collection region which are respectively in contact with the avalanche amplification region; and a control gate structure which is connected with the charge collection region, wherein the control gate structure is used for controlling the barrier height of the charge collection region. That is to say, the germanium-silicon avalanche photoelectric detector is based on the controlgate structure, and the barrier height of the charge collection region is controlled by adjusting the gate voltage, so that only when the accumulation potential energy of a charge carrier in dark current is higher than a potential barrier, the charge carrier is allowed to pass, the dark current of the germanium-silicon avalanche photoelectric detector is further reduced, and the photoelectric conversion efficiency is improved.

Description

technical field [0001] The invention relates to the technical field of detectors, in particular to a germanium-silicon avalanche photodetector. Background technique [0002] As a low-light detector, Avalanche Photo Diode (APD) has very important applications in many aspects such as optical communication, laser imaging and lidar. [0003] APDs in the visible and near-infrared bands (300nm-1000nm) generally use Si materials, which are very mature at present. APDs in the mid-infrared band (1.3 μm-1.7 μm) generally use III-V materials. The technology is very mature, but the cost is high and the uniformity is not good. It is very difficult to manufacture APD arrays in this band. In addition, silicon-based photonics has developed very rapidly in the past ten years. On the one hand, silicon-based photonics is fully compatible with silicon-based integrated circuits, and silicon-based optoelectronic chips will be very cheap in the future; on the other hand, C+L band (1.530μm -1.605...

AI Technical Summary

Problems solved by technology

However, the research on Ge as a low-light detector-avalanche photodiode has just begun, and it has a series of problems such as large dark current and low photoelectric conversion efficiency.

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