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Deep ultraviolet LED with component gradient quantum well structure and preparation method

A composition gradient and quantum well technology, which is applied in nanotechnology, electrical components, nanotechnology, etc. for materials and surface science, can solve the problem of low efficiency of deep ultraviolet LEDs, and achieve an increase in the equivalent barrier height and increase Luminous efficiency, effect of promoting recombination

Active Publication Date: 2021-02-19
SUZHOU UVCANTEK CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The purpose of the present invention is to provide a deep ultraviolet LED with a composition gradient quantum well structure and a preparation method, which is used to solve the problem of low efficiency of deep ultraviolet LED due to electron overflow effect in the prior art

Method used

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  • Deep ultraviolet LED with component gradient quantum well structure and preparation method
  • Deep ultraviolet LED with component gradient quantum well structure and preparation method
  • Deep ultraviolet LED with component gradient quantum well structure and preparation method

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preparation example Construction

[0023]For the second solution proposed by the present invention, the steps of the method for preparing a deep ultraviolet LED with a composition graded quantum well structure include:

[0024] (1) Growth of AlN intrinsic layer. In this step, the low-temperature buffer layer in the AlN intrinsic layer is grown on the sapphire substrate under the condition of 400-800°C, with a thickness of 10-50nm; An intrinsic layer of AlN is grown on the layer, and the total thickness of the intrinsic layer of AlN is 500-4000nm.

[0025] (2) An n-type AlGaN electron injection layer is grown. In this step, the temperature is lowered to 800-1200°C, and an n-type AlGaN electron injection layer is grown on the AlN intrinsic layer, wherein the Al composition percentage is 20-90%, the thickness is 500-4000nm, and Si is used as the n-type dopant .

[0026] (3) Growing quantum well active layers with gradually changing composition. In this step, under the condition of lowering the temperature to 7...

Embodiment 1

[0032] In this example, the steps for preparing a deep ultraviolet LED with a composition-graded quantum well structure are as follows:

[0033] (1) At 600°C, grow a low-temperature buffer layer in the AlN intrinsic layer on a sapphire substrate with a thickness of 12nm; raise the temperature to 1200°C, and grow an AlN intrinsic layer on the low-temperature buffer layer in the AlN intrinsic layer , the total thickness of the AlN intrinsic layer is 750 nm.

[0034] (2) The temperature is lowered to 900° C., and an n-type AlGaN electron injection layer is grown on the AlN intrinsic layer with a thickness of 1200 nm.

[0035] (3) Lower the temperature to 800°C, and grow a quantum well active layer with a graded composition on the n-type AlGaN electron injection layer. The quantum well active layer with a graded composition includes an AlGaN barrier layer with a graded composition and a constant composition The AlGaN potential well layer, specifically, the AlGaN potential well la...

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Abstract

The invention discloses a deep ultraviolet LED with a component gradient quantum well structure and a preparation method of the deep ultraviolet LED. The deep ultraviolet LED with the component gradient quantum well structure sequentially comprises a sapphire substrate, an AlN intrinsic layer, an n-type AlGaN electron injection layer, a component gradient quantum well active layer, an electron blocking layer, a p-type AlGaN hole injection layer and a p-type GaN contact layer from bottom to top. The component gradient quantum well active layer comprises a plurality of potential well layers anda plurality of barrier layers which are sequentially and alternately arranged, and the Al component content percentage of the (m+1)-th barrier layer is larger than that of the m-th barrier layer alongthe direction from the n-type AlGaN electron injection layer to the electron blocking layer. According to the invention, in the process of growing the quantum well active layer, the plurality of barrier layers show a trend that the Al components are increased progressively, thereby improving the equivalent barrier height of the quantum well active layer, promoting the recombination of electrons and holes in the quantum well active layer, and improving the light-emitting efficiency of the deep ultraviolet LED.

Description

technical field [0001] The invention relates to the field of semiconductor optoelectronics, in particular to a deep ultraviolet LED with a composition gradient quantum well structure and a preparation method. Background technique [0002] As an outstanding representative of wide bandgap semiconductor materials, group III nitrides have realized high-efficiency blue-green light-emitting diodes (full name light-emitting diodes, referred to as LEDs), lasers and other solid-state light source devices, which are used in flat panel displays, white lighting, etc. The application has been a great success. In the past ten years, people expect to apply this high-efficiency luminescent material to the ultraviolet band to meet the increasing demand for ultraviolet light sources. According to its biological effects, the ultraviolet band can usually be divided into: long-wave ultraviolet (i.e. UVA, wavelength 320-400nm), medium-wave ultraviolet (i.e. UVB, wavelength 280-320nm), short-wave...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/06H01L33/32H01L33/00B82Y30/00B82Y40/00
CPCH01L33/06H01L33/32H01L33/007B82Y30/00B82Y40/00
Inventor 张骏岳金顺梁仁瓅
Owner SUZHOU UVCANTEK CO LTD
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