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Method for preparing P type ZnO ohmic electrode

A technology of electrodes and electrode materials, which is applied in the manufacture of circuits, electrical components, semiconductors/solid-state devices, etc., can solve problems that affect the performance and stability of devices, it is difficult to explain the ohmic characteristics of electrodes, and poor adhesion of materials, etc., to achieve reduction Poor adhesion, avoiding changes in structure and physical and chemical properties, and protecting electrodes

Inactive Publication Date: 2008-09-17
CHANGCHUN INST OF OPTICS FINE MECHANICS & PHYSICS CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

At present, there are not many research results on the preparation of p-type ZnO ohmic electrodes reported internationally, and most of them use noble metals such as Au as materials for p-type ZnO ohmic contact electrodes. The disadvantages such as poor adhesion to the material seriously affect the performance and stability of the device
Secondly, the current-voltage relationship curve given in the report shows that the voltage applied to the ohmic contact is low, and if the potential barrier of metal and semiconductor is high, it is difficult to explain the ohmic characteristics of the electrode from the current-voltage curve

Method used

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Examples

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Embodiment 1

[0014] Example 1, on high-resistance p-type ZnO, after evaporating Ni and Au, rapid thermal annealing is carried out at 200° C. or 300° C. in nitrogen for 150 seconds.

[0015] Selection of experimental conditions:

[0016] The p-type ZnO flakes were grown on sapphire (Al) by molecular beam epitaxy (MBE). 2 o 3 ) on nitrogen-doped high-resistance p-type ZnO with an area of ​​about 1 cm 2 , and its resistivity is about 60Ω·cm.

[0017] Firstly, the p-type ZnO sheet was cleaned by ultrasonic cleaning with acetone and absolute ethanol for 5 minutes; rinsed with deionized water and washed with dry N 2 blow dry. The thickness is 0.2mm and the area is 6×6cm 2 The tantalum sheet is used as a metal mask, and two areas of 1mm are formed on the tantalum sheet by machining. 2 A circular hole is used as the shape of the electrode, the distance between the two electrodes is 2mm, the distance between the mask plate and the evaporation source is 12cm, and the purity of Ni and Au is 99....

Embodiment 2

[0019] Example 2, on the low-resistance p-type ZnO, after evaporating Ni and Au, rapid thermal annealing is carried out at 300° C. or 400° C. in nitrogen for 150 seconds.

[0020] The p-type ZnO flakes were grown on sapphire (Al) by molecular beam epitaxy (MBE). 2 o 3 ) on nitrogen-doped low-resistance p-type ZnO, with an area of ​​about 1cm 2 , and its resistivity is about 4Ω·cm.

[0021] Firstly, the p-type ZnO sheet was cleaned by ultrasonic cleaning with acetone and absolute ethanol for 5 minutes; rinsed with deionized water and washed with dry N 2 blow dry. The thickness is 0.2mm and the area is 6×6cm 2 The tantalum sheet is used as a metal mask, and two areas of 1mm are formed on the tantalum sheet by machining. 2 The shape of the circular hole is used as the electrode, the distance between the two electrodes is 2mm, and the distance between the mask plate and the evaporation source is 12cm. Ni and Au are 99.99% pure. The vacuum degree during vacuum evaporation is...

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Abstract

The invention relates to a manufacture method for P-type ZnO ohim electrode, which comprises: depositing Ni on P-type ZnO with vacuum evaporation device to form the first layer of Ni electrode material; depositing Au to form the second Au layer of electrode material as electrode; taking rapid hot annealing to prepared electrode in nitrogen at low temperature to reduce potential barrier height between metal and semiconductor interface for the atom mutual diffusion and achieve ohim contact. This invention can improve greatly the ohim property and reliability of electrode.

Description

technical field [0001] The invention belongs to the technical field of semiconductor materials and relates to a method for preparing a P-type ZnO ohmic electrode by utilizing Ni and Au materials and vacuum evaporation and thermal annealing techniques. Background technique [0002] Since the first discovery of room temperature ultraviolet stimulated emission of ZnO in 1997, ZnO-based semiconductor materials and devices have become a hot spot in the current international frontier topics. Making optoelectronic devices such as ultraviolet semiconductor lasers and light-emitting diodes is one of the most important practical applications of ZnO. However, since ZnO is usually n-type when undoped, it is difficult to prepare p-type samples, which has become a major obstacle to the preparation of ZnO optoelectronic devices. At the same time, these semiconductor optoelectronic devices need to transmit current through electrodes. Good electrode contact can reduce the working voltage an...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/443H01L33/00H01L33/38
Inventor 王新吕有明张吉英申德振
Owner CHANGCHUN INST OF OPTICS FINE MECHANICS & PHYSICS CHINESE ACAD OF SCI
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