Resistive random access memory unit and memorizer

Abstract

The invention discloses a resistive random access memory unit and a resistive random access memorizer. The memory unit comprises an upper electrode, a resistive functional layer, an intermediate electrode, an asymmetric tunneling potential barrier layer and a lower electrode, wherein the upper electrode, the resistive functional layer and the intermediate electrode are formed into a resistive memory part; the intermediate electrode, the asymmetric tunneling potential barrier layer and the lower electrode are formed into a strobe functional part; the resistive memory part and the strobe functional part share the intermediate electrode, and the strobe functional part can be placed on or beneath the resistive memory part; the asymmetric tunneling potential barrier layer is prepared from at least two materials different in potential barrier height, and the positive and negative tunneling currents passing through the resistive random access memory unit can be rectified and modulated in this way. According to the resistive random access memory unit and the memorizer disclosed by the invention, the asymmetric tunneling potential barrier layer is introduced to perform rectification so as to achieve strobe operation of a resistance unit. Meanwhile, the asymmetric tunneling potential barrier layer is free from doping or high-temperature annealing and is thin in thickness, so that the asymmetric tunneling potential barrier layer is beneficial for achieving three-dimensional high-density integration of the resistive random access memorizer.

Description

Technical field [0001] The invention belongs to the technical field of microelectronics and memory, and in particular relates to a resistance-change random memory unit and memory used for high-density data storage. Background technique [0002] Resistive random access memory (RRAM), as an emerging non-volatile storage technology, has advantages in cell area, device density, power consumption, programming / erasing speed, 3D integration, and multi-value realization. Compared with FLASH in many aspects, it has great advantages and has attracted great attention from large domestic and foreign companies and research institutes. The continuous progress of resistive storage technology makes it one of the most powerful competitors in the mainstream products of the non-volatile storage technology market in the future. [0003] The resistance change type memory has a simple unit structure of electrodes / insulating layers / electrodes. Therefore, the 1R cross-array type array structure will be t...

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Problems solved by technology

[0007] In the process of realizing the present invention, the inventor realized that the following technical problems existed in the prior art: in the resistive memory cell with 1D1R structure using PN junction as the gating unit, due to the need for additional doping and high-temperature activation process, there is no Conducive to three-dimensional high-density integration of resistive random access memory

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