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A quantum dot solid film with continuously changing energy level barrier height and its preparation method

A barrier height and quantum dot technology, applied in the field of quantum dots, can solve problems such as poor device performance, inability to regulate the injection barrier of electrons and holes, change the energy level barrier height of quantum dot solid film, and achieve improved Recombination probability, effect of improving device efficiency

Active Publication Date: 2020-02-07
TCL CORPORATION
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0006] In view of the above-mentioned deficiencies in the prior art, the purpose of the present invention is to provide a quantum dot solid film with continuously changing energy level barrier height and its preparation method, aiming to solve the problem that the existing technology cannot fundamentally change the entire quantum dot solid film. The height of the energy level barrier, and the injection barrier of electrons and holes cannot be adjusted, resulting in poor device performance.

Method used

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  • A quantum dot solid film with continuously changing energy level barrier height and its preparation method

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Embodiment 1

[0043] Quantum dot solid films with continuously increasing barrier heights were prepared with red quantum dots CdSe, bromide (TBABr), 1,3-benzenedithiol (1,3-BDT), and thiophenol (BT):

[0044] 1. The preparation of oil-soluble CdSe quantum dots is as follows:

[0045] 1) Cadmium oleate {Cd(OA) 2}Precursor preparation:

[0046] Add 2 mmol of cadmium oxide (CdO), 3 ml of oleic acid (OA), and 10 ml of octadecene (ODE) into a three-necked flask. First, vacuumize at room temperature for 30 mins, then heat to 180°C and exhaust argon for 60 mins, and then maintain it for 180 °C. ℃ vacuumize for 30 mins, cool to room temperature for later use;

[0047] 2) Preparation of Selenium (Se) Precursor:

[0048] Add 4mmol of Se to 4ml of trioctylphosphine (TOP), heat to 170°C for 30min, then cool down to 140°C.

[0049] 3) Preparation of red CdSe quantum dots:

[0050] The cadmium oleate {Cd(OA) in 1) 2} The precursor was heated to 280°C, and then 2ml of selenium (Se) precursor was ext...

Embodiment 2

[0065] Red quantum dots CdSe, ethylenediamine (EDA), ethanedithiol (EDT), ammonium thiocyanate (NH 4 SHN) to prepare quantum dot solid films with continuously reduced barrier heights:

[0066] 1. The preparation of oil-soluble CdSe quantum dots is as follows:

[0067] 1) Cadmium oleate {Cd(OA) 2}Precursor preparation:

[0068] Add 2 mmol of cadmium oxide (CdO), 3 ml of oleic acid (OA), and 10 ml of octadecene (ODE) into a three-necked flask. First, vacuumize at room temperature for 30 mins, then heat to 180°C and exhaust argon for 60 mins, and then maintain it for 180 °C. ℃ vacuumize for 30 mins, cool to room temperature for later use;

[0069] 2) Preparation of Selenium (Se) Precursor:

[0070] Add 4mmol of Se to 4ml of trioctylphosphine (TOP), heat to 170°C for 30min, then cool down to 140°C.

[0071] 3) Preparation of red CdSe quantum dots:

[0072] The cadmium oleate {Cd(OA) in 1) 2} The precursor was heated to 280°C, and then 2ml of selenium (Se) precursor was extr...

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Abstract

The invention discloses a quantum dot solid film with continuously changing barrier height and a preparation method thereof, wherein the quantum dot solid film includes N quantum dot thin film units sequentially arranged in the radial direction, wherein N≥3; The energy level barrier heights of the N quantum dot film units present a trend of continuous increase or decrease in the radial direction. The potential barrier height of the quantum dot solid film provided by the present invention can be continuously increased or decreased, thereby matching the potential barrier height of each transport layer; further, the quantum dot solid film can also effectively regulate the injection potential of electrons and holes barrier height, which is beneficial to the recombination of electrons and holes to improve device efficiency; therefore, the present invention effectively solves the problem that the cross-linking technology can only change the injection barrier between the quantum dot solid film and the transport layer interface, but cannot make the entire quantum dot The continuous increase or decrease of the barrier height of the dot solid film cannot effectively improve the recombination probability of electrons and holes.

Description

technical field [0001] The invention relates to the technical field of quantum dots, in particular to a quantum dot solid film with continuously changing energy level barrier height and a preparation method thereof. Background technique [0002] Quantum dot luminescent materials are the most potential display materials of the new generation because of their advantages such as good quantum efficiency and color purity. However, devices prepared for quantum dot luminescent materials have many device structures, and different quantum dot luminescent materials correspond to different device structures. [0003] Usually, when using quantum dot light-emitting materials to assemble devices, there will be a lot of optimization and modification of the interface layer, such as the optimization of quantum dots and transport layers, in order to mediate the transport of charges in the device and reduce the injection potential of electron holes. barrier, which is conducive to improving th...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L51/50H01L51/56
CPCH10K50/13H10K50/115H10K71/00
Inventor 程陆玲杨一行
Owner TCL CORPORATION
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