Three-dimensional memory manufacturing method and three-dimensional memory

Abstract

The invention provides a three-dimensional memory manufacturing method and a three-dimensional memory, and the method comprises: forming a semiconductor structure, and enabling a stack structure of the semiconductor structure to be provided with a first structural hole with the bottom located at an etching stop layer; removing the etching stop layer at the bottom of the first structure hole, and exposing the insulating layer at the bottom of the etching stop layer; further extending the bottom of the first structure hole into the sacrificial layer; removing the sacrificial layer to form a sacrificial gap; forming a second substrate in the sacrificial gap; and forming a common source contact in the first structural hole. An etching stop layer is arranged in a stack structure of the three-dimensional memory, the etching stop layer can be used as a stop layer for etching the first structural hole, and the etching depth in the last process step can be reduced due to the fact that the position of the etching stop layer in the stack structure is determined, so that the machining error is reduced, the etching precision is accurately controlled, and the bottom of the first structural holecan be just located in the sacrificial layer and cannot be too deep or too shallow.

Description

Technical field [0001] The present invention relates to three-dimensional memory technology, in particular to a three-dimensional memory manufacturing method and a three-dimensional memory. Background technique [0002] With the rapid development of technologies such as big data, cloud computing, and the Internet of Things, the requirements for memory integration and storage density have also increased. Traditional two-dimensional planar memories have been unable to meet actual needs and are gradually being replaced by three-dimensional memories. [0003] In the related art, a three-dimensional memory includes a substrate and a stack structure stacked on the substrate. The stack structure is provided with a channel hole and a gate slit penetrating the substrate, the channel structure is provided in the channel hole, and the gate slit is provided There is a common source contact; and the channel layer of the channel structure can be exposed from the sidewall of the channel hole and ...

AI Technical Summary

Problems solved by technology

[0005] The invention provides a method for manufacturing a three-dimensional memory and a three-dimensional memory to overcome the problem that the etching depth of the grid seam is difficult to control in the related art

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