Preparation method of photoelectric detector

A photoelectric detector and equipment technology, applied in the field of photodetectors, can solve the problems of poor detector performance, low response rate, and low specific detection rate, and achieve the effects of increased detection rate, increased light and dark current, and high response rate

Inactive Publication Date: 2017-10-20
湖南商学院
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Problems solved by technology

[0004] In summary, the existing problems in the prior art are: existing photodetectors have low response rate, low specific detectivity, and poor detector performance; existing silicon-based Ge photodetectors are expensive and cumbersome to manufacture

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  • Preparation method of photoelectric detector
  • Preparation method of photoelectric detector
  • Preparation method of photoelectric detector

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Embodiment Construction

[0035] In order to make the object, technical solution and advantages of the present invention more clear, the present invention will be further described in detail below in conjunction with the examples. It should be understood that the specific embodiments described here are only used to explain the present invention, not to limit the present invention.

[0036] The application principle of the present invention will be described in detail below in conjunction with the accompanying drawings.

[0037] Such as figure 1 As shown, the preparation method of the photodetector provided by the embodiment of the present invention includes the following steps:

[0038] S101: LP-MOCVD equipment is used for material growth, and trimethylindium (TMIN), trimethylgallium (TMGa), trimethylaluminum (TMA1), arsine (AsH 3 ) and phosphine (pH3) as In, Ga, As and P sources, with SiH 4 It is an n-type doping source, and Ar is used as a carrier gas;

[0039] S102: Using n doped with S +－ InP ...

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Abstract

The invention belongs to the photoelectric detector field and discloses a preparation method of a photoelectric detector. The preparation method includes the following steps that: the surface of a cap layer is coated with an antimony selenide film, wherein the antimony selenide film is an antimony selenide film which has been subjected to post-selenization treatment; and a ZnO film of 2.2 microns is deposited on a photosensitive region so as to be adopted as an antireflective film. The light transmittance of the ZnO film in a visible light region is greater than 85%, and the ZnO thin film shows a good low-resistance characteristic under a suitable doping condition, and the ZnO thin film is an ideal transparent conductive film; on the basis of the wide-band-gap and high-photoconductivity characteristic of the ZnO film, the application of the ZnO film in this field is greatly widened; the photoelectric detector grown by MOCVD (Metal Organic Chemical Vapor Deposition) has a high response rate; the light and dark current of the antimony selenide film which has been subjected to the post-selenization treatment is greatly improved without losing responsivity; the specific detection rate of the photoelectric detector is improved; the performance of the detector is greatly improved; and the detector has a bright application prospect.

Description

technical field [0001] The invention belongs to the field of photodetectors, in particular to a method for preparing a photodetector. Background technique [0002] The principle of the photodetector is that the conductivity of the irradiated material is changed by radiation, and the light radiation energy is converted into a current or voltage signal for measurement. Photodetectors are widely used in various fields of military and national economy. The main features are: high detection sensitivity and fast response time. In the visible or near-infrared band, it is mainly used for ray measurement and detection, industrial automatic control, photometry, etc.; in the infrared band, it is mainly used for missile guidance, infrared thermal imaging, infrared remote sensing, etc. Another application of the photoconductor is to use it as the target surface of the camera tube. In order to avoid image blur caused by the diffusion of photogenerated carriers, high-resistance polycrys...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/18H01L31/0216C23C14/08C23C14/34
CPCC23C14/086C23C14/3414H01L31/02161H01L31/1844
Inventor 曹东波
Owner 湖南商学院
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