Preparation method of graphene field effect transistor

A field-effect transistor and graphene technology, which is applied in semiconductor/solid-state device manufacturing, gaseous chemical plating, coating, etc., can solve the problems of increasing application cost, difficult preparation process compatibility, complex production process, etc., and achieves low power consumption. , Ultra-light and ultra-stable infrared detection function, the effect of high sensitivity

Inactive Publication Date: 2011-09-14
FUDAN UNIV
View PDF1 Cites 35 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In the prior art, infrared detectors of various bands, whether it is InGaAs-based, InSb-based, or quantum well-type detection QWIP and mercury cadmium telluride (MCT)-based, all need to work at low temperature and require an additional refrigeration system, w

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Preparation method of graphene field effect transistor
  • Preparation method of graphene field effect transistor
  • Preparation method of graphene field effect transistor

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0034] The present invention is further described below in conjunction with the accompanying drawings and reference examples. The present invention provides preferred embodiments, but should not be construed as being limited to the embodiments set forth herein. In the drawings, the thicknesses of layers and regions are exaggerated for clarity, but as schematic diagrams, they should not be considered as strictly reflecting the proportional relationship of geometric dimensions.

[0035] The figures referenced herein are schematic illustrations of idealized embodiments of the present invention, and the illustrated embodiments of the present invention should not be considered limited to the particular shapes of the regions shown in the figures, but include resulting shapes, such as manufacturing-induced deviation. For example, the curves obtained by dry etching usually have curved or rounded characteristics, but in the illustrations of the embodiments of the present invention, the...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention belongs to the technical field of field effect transistors, and particularly relates to a preparation method of a graphene field effect transistor. The method comprises the steps of: providing a substrate through which infrared rays can penetrate; carrying out chemical vapor deposition on graphene to form a graphene channel layer; constructing a pattern on the graphene channel layer to form a grid medium layer; and constructing a pattern on the grid medium layer to form a grid end, wherein the graphene channel layer generates a photoconductive effect operatively under the radiation of the infrared rays so as to lead the electric characteristic of the graphene field effect transistor to be changed. In the preparation method, the technique is simple in process and is compatible with an integrated circuit manufacturing technique, the prepared field effect transistor has the advantages that the sensitivity is high, the power consumption is low, the infrared detection function is ultra-light and ultra-stable, the infrared absorbing belt is wide and the adjustability can be achieved according to the practical application needs.

Description

technical field [0001] The invention belongs to the technical field of field effect transistors, in particular to a preparation method of graphene field effect transistors. Background technique [0002] With the continuous extension and depth of Moore's Law, the device size of silicon-based integrated circuits is getting closer and closer to the physical limit, and the international semiconductor technology community has proposed Beyond Silicon (Beyond Silicon) technology, among which graphene is considered to be the The most promising material to replace silicon. [0003] Graphene is a two-dimensional crystal composed of carbon atoms on a single-layer honeycomb crystal lattice, and the thickness of a single-layer graphite is about 0.35 nanometers. figure 1 Shown is a schematic diagram of the basic structure of graphene. Currently, graphite with less than ten layers is regarded as graphene. Because graphene has superconducting properties, high-strength mechanical properti...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): H01L21/336C23C16/26C23C16/34
Inventor 周鹏孙清清吴东平张卫
Owner FUDAN UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap