Method for measuring carrier concentration of graphene by virtue of Goos-Hanchen shift

A technology for olefin carrier and displacement measurement, which is used in measurement devices, optical devices, material analysis by optical means, etc.

Active Publication Date: 2016-10-12
NORTHWESTERN POLYTECHNICAL UNIV
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Problems solved by technology

[0006] This method aims to use optical means to solve the problem of graphene carrier concentration measurement. It discloses a method of loading graphene in the Goose-Hanchen displacement measurement system to realize the measurement of the Goose-

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  • Method for measuring carrier concentration of graphene by virtue of Goos-Hanchen shift
  • Method for measuring carrier concentration of graphene by virtue of Goos-Hanchen shift
  • Method for measuring carrier concentration of graphene by virtue of Goos-Hanchen shift

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Embodiment Construction

[0026] Embodiments of the present invention are described in detail below, and the embodiments are exemplary and intended to explain the present invention, but should not be construed as limiting the present invention.

[0027] This method involves the use of optical means to solve the structure of the graphene carrier concentration measurement problem. A layered system is composed of a single layer of graphene covered on a layer of near-zero refractive index metamaterial, and an obliquely incident terahertz beam is introduced. Get S polarized light and P polarized light (such as figure 1 shown).

[0028]The COMSOL full-wave simulation software is used for modeling and calculation to verify the theoretical results. First, at 8THz, the Fermi energy is determined to be 0.5eV, and the Goos-Hanshin shift of S-polarized light and P-polarized light is analyzed when the incident angle of the terahertz beam changes with and without the graphene layer. The amount of change (such as ...

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Abstract

The invention discloses a method for measuring the carrier concentration of graphene by virtue of Goos-Hanchen shift. The variation of the Goos-Hanchen shift after introduction of the graphene is measured to measure the photoconductivity of the graphene and further measure the carrier concentration of the graphene. The method specifically comprises the following steps: covering a metamaterial with a refractive index approaching to zero with a single layer of graphene, obliquely emitting a terahertz beam to the surface of the graphene, detecting the Goos-Hanchen shift of reflected light, and calibrating the carrier concentration or the Fermi energy level of the graphene according to a relationship between the calibrated Goos-Hanchen shift and the carrier concentration or the Fermi energy level of the graphene. According to the method, a method of optically measuring the Goos-Hanchen shift without direct contact with a graphene sample is adopted, and is a non-contact and damage-free measurement method, so that additional influencing factors are avoided.

Description

technical field [0001] The method relates to a design for measuring the electrical properties of graphene by using an optical method, in particular to a method for measuring the carrier concentration of graphene by using terahertz Bogus-Hanchen shift. Background technique [0002] Graphene is a two-dimensional crystalline material in which carbon atoms are arranged in a honeycomb structure. Due to its excellent electrical, thermal and mechanical properties and its possible application potential, it has attracted attention in many fields. Graphene-based nanoelectronics Chemical devices have been well applied. Compared with traditional semiconductor materials, the carrier and Fermi energy of graphene have a larger adjustable space, which can be regulated by means of electricity, magnetism and chemical doping [Document 1, Geim A K, Novoselov K S. The rise of graphene [J]. Nature materials, 6(3):183-191(2007)]. [0003] To apply graphene to electrical devices, it is first nece...

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Application Information

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IPC IPC(8): G01N21/17G01N21/3581G01B11/02
CPCG01B11/02G01N21/17G01N21/3581
Inventor 樊元成董佳佳乔通张富利付全红
Owner NORTHWESTERN POLYTECHNICAL UNIV
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