A method for measuring graphene carrier concentration using the Goos-Hanshin shift
A technology for the measurement of ene carriers and displacements, which is applied in the direction of measuring devices, optical devices, and material analysis through optical means.
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[0026] Embodiments of the present invention are described in detail below, and the embodiments are exemplary and intended to explain the present invention, but should not be construed as limiting the present invention.
[0027] This method involves the use of optical means to solve the structure of the graphene carrier concentration measurement problem. A layered system is composed of a single layer of graphene covered on a layer of near-zero refractive index metamaterial, and an obliquely incident terahertz beam is introduced. Get S polarized light and P polarized light (such as figure 1 shown).
[0028]The COMSOL full-wave simulation software is used for modeling and calculation to verify the theoretical results. First, at 8THz, the Fermi energy is determined to be 0.5eV, and the Goos-Hanshin shift of S-polarized light and P-polarized light is analyzed when the incident angle of the terahertz beam changes with and without the graphene layer. The amount of change (such as ...
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