This invention discloses a method for fabricating a
quantum dot
photodetector with a defect
state density gradient distribution, belonging to the field of optoelectronic device technology. This invention introduces
nitrogen vacancies and low-valence Ti defects within the
quantum dot, utilizing the sub-bandgap energy levels formed by these defects to achieve near-
infrared light absorption. A gradient defect distribution is set along the thickness direction of the light-absorbing layer, forming a gradient energy band and a built-in auxiliary
electric field, promoting the separation of photogenerated carriers. The
high electron concentration
quantum dot layer near the
electron transport layer can selectively extract electrons and block hole
backflow. This invention eliminates the use of toxic lead-based
quantum dot materials, resulting in a green and
environmentally friendly device that combines excellent
infrared response and carrier collection efficiency. The fabrication process is simple and low-cost, facilitating large-scale fabrication and making it suitable for near-
infrared photodetector-related fields.