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2results about How to "Fast response" patented technology

High-sensitivity thermal sensitive coating of nanomaterial and preparation method thereof

PendingCN122255824AImprove thermal response sensitivityHigh thermal sensitivityEpoxy resin coatingsImidePhysical chemistry
The application discloses a kind of high-sensitivity thermal sensitive coating of nanomaterial and preparation method thereof, wherein, high-sensitivity thermal sensitive coating of nanomaterial includes the following components by mass fraction: base component 30-50 parts;Hydroxylated nanometer bismuth acid lanthanum 5-12 parts;Amino-modified nanometer tin oxide antimony 4-10 parts;Polyimide-coated nanometer europium vanadate 3-8 parts;Dispersing agent 2-6 parts;Film forming agent 3-7 parts;Anti-aging agent 1-3 parts;Solvent 15-30 parts;The present application is high in thermal sensitivity, by designing hydroxylated nanometer bismuth acid lanthanum, amino-modified nanometer tin oxide antimony, polyimide-coated nanometer europium vanadate three kinds of innovative thermal sensitive components, synergistic effect of three, can significantly improve the thermal sensitive response sensitivity of coating, the thermal sensitive response sensitivity of coating is ≤0.1 DEG C, far higher than existing thermal sensitive coating (0.5 DEG C or more), can satisfy the demand of high-precision temperature detection.
Owner:JIANGSU WANBAO RUIDA HI TECH CO LTD

A method for preparing a quantum dot photodetector with a gradient distribution of defect states

This invention discloses a method for fabricating a quantum dot photodetector with a defect state density gradient distribution, belonging to the field of optoelectronic device technology. This invention introduces nitrogen vacancies and low-valence Ti defects within the quantum dot, utilizing the sub-bandgap energy levels formed by these defects to achieve near-infrared light absorption. A gradient defect distribution is set along the thickness direction of the light-absorbing layer, forming a gradient energy band and a built-in auxiliary electric field, promoting the separation of photogenerated carriers. The high electron concentration quantum dot layer near the electron transport layer can selectively extract electrons and block hole backflow. This invention eliminates the use of toxic lead-based quantum dot materials, resulting in a green and environmentally friendly device that combines excellent infrared response and carrier collection efficiency. The fabrication process is simple and low-cost, facilitating large-scale fabrication and making it suitable for near-infrared photodetector-related fields.
Owner:XIAN TECH UNIV